STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type VDSS RDS(on) ID Pw STD5NM60 650 V <1Ω 5A 96 W 1 STD5NM60-1 650 V <1Ω 5A 96 W DPAK STB8NM60 650 V <1Ω 5A 100 W STP8NM60 650 V <1Ω 8A 100 W STP8NM60FP 650 V <1Ω 8 A(1) 30 W 3 2 TO-220FP 3 1 D²PAK 3 ■ 100% avalanche tested ■ HIgh dv/dt and avalanche capabilities ■ Low input capacitance and gate charge ■ Low gate input resistance 2 3 1 Figure 1. 1 2 TO-220 Application ■ 3 1 IPAK Internal schematic diagram Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Table 1. Device summary Order codes Marking Package Packaging STD5NM60-1 D5NM60 IPAK Tube STD5NM60T4 D5NM60 DPAK Tape & reel STB8NM60T4 B8NM60 D²PAK Tape & reel STP8NM60 P8NM60 TO-220 Tube STP8NM60FP P8NM60FP TO-220FP Tube October 2008 Rev 17 1/18 www.st.com 18 Electrical ratings 1 STP8NM60, STD5NM60, STB8NM60 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter TO-220 D²PAK VGS Gate-source voltage IPAK TO-220FP Unit DPAK ± 30 V ID Drain current (continuous) at TC = 25 °C 8 8(1) 5 A ID Drain current (continuous) at TC=100 °C 5 5 (1) 3.1 (1) A IDM(2) Drain current (pulsed) 32 32 (1) 20 (1) A PTOT Total dissipation at TC = 25 °C 100 30 96 W Derating factor 0.8 0.24 0.0.4 W/°C dv/dt(3) VISO TJ Tstg Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) 15 -- Operating junction temperature Storage temperature V/ns 2500 -- -55 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 5 A, di/dt ≤ 400 A/µs, VDD = 80%V(BR)DSS Table 2. Thermal resistance Value Symbol Rthj-case Thermal resistance junction-case max Unit TO-220 IPAK D²PAK DPAK 1.25 1.3 TO-220FP 4.16 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Symbol 2/18 Parameter Avalanche data Parameter Value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 2.5 A EAS Single pulse avalanche energy (starting Tj=25 °C, ID=IAS, VDD=50 V) 200 mJ STP8NM60, STD5NM60, STB8NM60 2 Electrical characteristics Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 2.5 A Symbol Typ. Max. 600 1 10 µA µA ±100 nA 4 5 V 0.9 1 Ω Typ. Max. Unit VDS = max rating @125 °C 3 Unit V VDS = max rating, IDSS Table 5. Min. Dynamic Parameter Test conditions Min. gfs Forward transconductance VDS = ID(on) x RDS(on)max, ID = 2.5 A 2.4 S Ciss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS=0 400 100 10 pF pF pF VGS=0, VDS =0 to 480 V 50 pF VDD= 400 V, ID = 5 A 13 5 6 Coss Crss Coss eq(1). Equivalent output capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VGS =10 V (see Figure 12) 18 nC nC nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 3/18 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf tr(Voff) tf tc Table 7. Symbol STP8NM60, STD5NM60, STB8NM60 Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off delay time Fall time VDD= 300 V, ID= 2.5 A, RG= 4.7 Ω, VGS=10 V (see Figure 17) Off-voltage rise time Fall time Cross-over time VDD= 480 V, ID= 5 A, RG= 4.7 Ω, VGS=10 V Typ. Max. Unit 14 10 23 10 ns ns ns ns 7 10 17 ns ns ns Source drain diode Max. Unit Source-drain current 8 A ISDM(1) Source-drain current (pulsed) 32 A VSD(2) Forward on voltage ISD = 5A, VGS=0 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current di/dt = 100 A/µs, (see Figure 22) Reverse recovery time Reverse recovery charge Reverse recovery current di/dt = 100 A/µs, Tj=150 °C (see Figure 22) ISD trr Qrr IRRM trr Qrr IRRM Parameter Test conditions ISD = 5 A, VDD=100 V ISD = 5 A, VDD = 100 V 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/18 Min. Min. Typ. 300 1.95 13 ns µC A 445 3.00 13.5 ns µC A STP8NM60, STD5NM60, STB8NM60 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220/ D²PAK Figure 3. Thermal impedance for TO-220/ D²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for DPAK/IPAK Figure 7. Thermal impedance for DPAK/IPAK 5/18 Electrical characteristics Figure 8. Output characteristics Figure 10. Transconductance STP8NM60, STD5NM60, STB8NM60 Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 6/18 STP8NM60, STD5NM60, STB8NM60 Figure 14. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics 7/18 Test circuit 3 STP8NM60, STD5NM60, STB8NM60 Test circuit Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform 8/18 Figure 22. Switching time waveform STP8NM60, STD5NM60, STB8NM60 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/18 Package mechanical data STP8NM60, STD5NM60, STB8NM60 TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 10/18 Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 STP8NM60, STD5NM60, STB8NM60 Package mechanical data TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 11/18 Package mechanical data STP8NM60, STD5NM60, STB8NM60 D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° 0079457_M 12/18 Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° STP8NM60, STD5NM60, STB8NM60 Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 e e1 6.60 2.28 4.40 H 4.60 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H 13/18 Package mechanical data STP8NM60, STD5NM60, STB8NM60 TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 D1 E 6.20 5.10 6.40 E1 6.60 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 R V2 1 0.20 0o 8o 0068772_G 14/18 STP8NM60, STD5NM60, STB8NM60 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 15/18 Packaging mechanical data STP8NM60, STD5NM60, STB8NM60 DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 16/18 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STP8NM60, STD5NM60, STB8NM60 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 14-Apr-2004 11 Title changed 11-Apr-2005 12 Inserted D²PAK 21-Feb-2006 13 New template 08-Sep-2006 14 Modified order codes 14-Sep-2006 15 Corrected Figure 6.: Safe operating area for DPAK/IPAK 09-Jul-2007 16 Qrr value in Table 7.: Source drain diode has been updated 01-Oct-2008 17 4: Package mechanical data updated 17/18 STP8NM60, STD5NM60, STB8NM60 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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