STMICROELECTRONICS STP5NK90Z

STP5NK90Z
STF5NK90Z
N-channel 900V - 2Ω - 4.5A - TO-220/TO-220FP
Zener - Protected SuperMESH™ MOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
PW
4.5 A
125W
STP5NK90Z
900 V
< 2.5 Ω
STF5NK90Z
900 V
< 2.5 Ω 4.5 A(1)
30W
3
1. Limited only by maximum temperature allowed
■
Extremely high dv/dt capability
■
Improved esd capability
■
100% avalanche rated
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing repeatibility
1
TO-220
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Applications
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Internal schematic diagram
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
stripbased PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
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TO-220FP
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Description
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Switching application
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Order codes
Part number
Marking
STP5NK90Z
STF5NK90Z
August 2006
Package
Packaging
P5NK90Z
TO-220
Tube
F5NK90Z
TO-220FP
Tube
Rev 4
1/15
www.st.com
15
Contents
STP5NK90Z - STF5NK90Z
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
2
Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
............................ 7
3
Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STP5NK90Z - STF5NK90Z
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
STP5NK90Z
VDS
VDGR
VGS
Unit
STF5NK90Z
Drain-source voltage (VGS = 0)
900
V
Drain-gate voltage (RGS = 20KΩ)
900
V
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
4.5
4.5 (2)
A
ID
Drain current (continuous) at TC=100°C
2.8
2.8 (2)
A
IDM (1)
Drain current (pulsed)
18
18 (2)
A
PTOT
Total dissipation at TC = 25°C
125
30
1
0.24
Derating Factor
VESD (G-S)
(3)
dv/dt
VISO
TJ
Tstg
Gate source ESD (HBM-C=100pF, R=1.5KΩ)
4000
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Peak diode recovery voltage slope
4.5
P
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Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
-
2500
-55 to 150
-55 to 150
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1. Pulse width limited by safe operation area
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W
W/°C
V
V/ns
V
°C
°C
2. Limited only by maximum temperature allowed
3. ISD ≤4.5 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Table 2.
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Thermal data
Symbol
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Rthj-case
Thermal resistance junction-case Max
Unit
TO-220
TO-220FP
1
4.2
°C/W
Rthj-a
Thermal resistance junction-ambient Max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
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Value
Parameter
Table 3.
Symbol
Avalanche characteristics
Parameter
Max Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
4.5
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
230
mJ
3/15
Electrical ratings
Table 4.
STP5NK90Z - STF5NK90Z
Gate-source zener diode
Symbol
BVGSO
1.1
Parameter
Gate-Source breakdown
voltage
Test conditions
Igs=±1mA
(Open drain)
Min
Typ.
Max
30
Unit
V
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
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STP5NK90Z - STF5NK90Z
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating,
VDS = Max rating, Tc=125°C
IGSS
Gate body leakage current
VGS = ± 20V
(VGS = 0)
V(BR)DSS
Gate threshold voltage
VDS = VGS, ID = 100µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 2.25 A
Parameter
Test conditions
gfs (1)
Forward transconductance VDS =15V, ID = 2.25A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
(t s)
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
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Max.
3
1
50
µA
µA
±10
µA
3.75
4.5
V
2
2.5
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Min.
Unit
V
Dynamic
Symbol
Cosseq(2).
Typ.
900
VGS(th)
Table 6.
Min.
Typ.
)
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Max.
Ω
Unit
4.8
S
VDS =25V, f=1 MHz, VGS=0
1160
105
21.5
pF
pF
pF
VGS=0, VDS =0V to 720V
65.5
pF
VDD=400 V, ID= 2.2 A,
RG=4.7Ω, VGS=10V
(see Figure 19)
27
7.2
52
19
ns
ns
ns
ns
VDD=720V, ID = 4.4A
VGS =10V
(see Figure 18)
41.5
69
21.9
nC
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1. Pulsed: pulse duration=300µs, duty cycle 1.5%
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2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
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Electrical characteristics
Table 7.
STP5NK90Z - STF5NK90Z
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
4.5
A
ISDM(1)
Source-drain current
(pulsed)
18
A
VSD(2)
Forward on voltage
ISD = 4.5A, VGS=0
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.5 A, di/dt = 100 A/µs
VDD = 35 V
(see Figure 18)
635
5.9
18.5
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.5 A, di/dt = 100 A/µs
VDD = 35 V,
Tj = 150 °C
(see Figure 18)
712
4.66
13.1
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
1. Pulse width limited by safe operating area
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STP5NK90Z - STF5NK90Z
Electrical characteristics
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO 220
Figure 3.
Figure 2.
Safe operating area for TO-220FP
Figure 4.
Thermal impedance for TO-220
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Thermal impedance for TO-220FP
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Electrical characteristics
STP5NK90Z - STF5NK90Z
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
Figure 7.
Transconductance
Figure 8.
Static drain-source on resistance
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Figure 9.
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Gate charge vs gate-source voltage Figure 10. Capacitance variations
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STP5NK90Z - STF5NK90Z
Electrical characteristics
Figure 11. Normalized gate threshold voltage
vs temperature
Figure 12. Normalized on resistance vs
temperature
Figure 13. Source-drain diode forward
characteristics
Figure 14. Avalanche Energy vs starting Tj
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Figure 15. Normalized breakdown voltage vs
temperature
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Test circuit Package mechanical data
3
STP5NK90Z - STF5NK90Z
Test circuit Package mechanical data
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive wafeform
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Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
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Figure 20. Test circuit for inductive load
switching and diode recovery times
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STP5NK90Z - STF5NK90Z
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data
STP5NK90Z - STF5NK90Z
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
16
0.630
L3
28.6
30.6
1.126
L4
9.8
10.6
.0385
L5
2.9
3.6
0.114
L6
15.9
16.4
0.626
0.354
9
9.3
Ø
3
3.2
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0.118
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L6
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L7
F1
B
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L2
L5
1 2 3
L4
0.417
0.141
0.645
0.366
0.126
D
A
L7
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1.204
E
L2
STP5NK90Z - STF5NK90Z
Package mechanical data
TO-220 MECHANICAL DATA
mm.
DIM.
MIN.
inch
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
0.154
L20
16.40
0.645
L30
28.90
1.137
øP
3.75
3.85
0.147
Q
2.65
2.95
0.104
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0.151
0.116
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Revision history
5
STP5NK90Z - STF5NK90Z
Revision history
Table 8.
Revision history
Date
Revision
Changes
06-Oct-2004
1
First release
08-Sep-2005
2
Complete datasheet
14-Dec-2005
3
Inserted Ecopack indication
31-Jul-2005
4
New template, no content change
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STP5NK90Z - STF5NK90Z
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