STMICROELECTRONICS STPS6045CPI

STPS6045CP/CPI/CW
®
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
2x30 A
VRRM
A1
K
45 V
Tj (max)
175 °C
VF (max)
0.63 V
A2
A2
K
A1
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREME FAST SWITCHING
LOW THERMAL RESISTANCE
INSULATED PACKAGE: TOP-3I
Insulating voltage = 2500VRMS
Capacitance = 12pF
AVALANCHE CAPABILITY SPECIFIED
Insulated
TOP-3I
STPS6045CPI
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DESCRIPTION
Dual center tap Schottky rectifier suited for
switchmode power supply and high frequency DC
to DC converters.
Packaged either in SOT-93, TOP-3I or TO-247,
this device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection applications.
A1
SOT-93
STPS6045CP
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IF(RMS)
IF(AV)
RMS forward current
Average forward current
δ = 0.5
Unit
V
60
A
A
TOP-3I
Tc = 130°C
Per device
60
Repetitive Peak reverse current
tp = 2 µs square
F = 1kHz
IRSM
Non repetitive peak reverse current
tp = 100 µs square
* :
Value
45
30
IRRM
dV/dt
TO-247
STPS6045CW
Per diode
tp = 10 ms sinusoidal
Tj
A1
Tc = 150°C
Surge non repetitive forward current
Tstg
K
SOT-93
TO-247
IFSM
PARM
A2
A2
K
Repetitive peak avalanche power
tp = 1µs
Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
400
A
1
A
3
A
10600
W
- 65 to + 175
°C
175
°C
10000
V/µs
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth( j − a )
July 2003 - Ed: 7B
1/5
STPS6045CP/CPI/CW
THERMAL RESISTANCES
Symbol
Rth (j-c)
Parameter
SOT-93 / TO-247
Per diode
Total
Value
0.95
0.55
Per diode
Total
1.8
1.1
SOT-93 / TO-247
Coupling
TOP-3I
When the diodes 1 and 2 are used simultaneously:
∆ TJ(diode 1) = P(diode1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
0.15
0.4
Junction to case
TOP-3I
Rth (c)
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF *
Parameter
Tests Conditions
Min.
Typ.
Max.
500
Unit
µA
20
80
mA
0.53
0.63
V
VR = VRRM
Reverse leakage
current
Tj = 25°C
Forward voltage drop
Tj = 125°C
IF = 30 A
Tj = 25°C
IF = 60 A
Tj = 125°C
IF = 60 A
Tj = 125°C
0.84
0.68
0.78
Pulse test : ** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.48 x IF(AV) + 0.005 IF2(RMS)
Fig. 1: Average forward power dissipation
Fig. 2: Average current versus ambient
versus average forward current (per diode).
temperature (δ=0.5, per diode).
PF(av)(W)
IF(av)(A)
25
δ = 0.05
δ = 0.1 δ = 0.2
35
δ = 0.5
20
δ=1
25
15
20
10
15
0
0
5
10
15
20
25
30
Rth(j-a)=10°C/W
T
5
δ=tp/T
IF(av) (A)
TOP-3I
10
T
5
δ=tp/T
tp
35
40
Fig. 3: Normalized avalanche power derating
versus pulse duration.
0
0
Tamb(°C)
tp
25
50
75
100
125
150
175
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
SOT-93
TO-247
Rth(j-a)=Rth(j-c)
30
1.2
PARM(tp)
PARM(25°C)
1
0.1
0.8
0.6
0.4
0.01
0.2
0.001
0.01
2/5
Tj(°C)
tp(µs)
0.1
1
0
10
100
1000
0
25
50
75
100
125
150
STPS6045CP/CPI/CW
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (SOT-93 and TO-247).
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TOP-3I).
IM(A)
IM(A)
350
250
300
200
250
150
200
Tc=75°C
150
Tc=75°C
Tc=100°C
100
Tc=100°C
Tc=125°C
100
IM
50
IM
50
t
t(s)
δ=0.5
0
1E-3
Tc=125°C
t
t(s)
δ=0.5
1E-2
1E-1
1E+0
Fig. 6: Relative variation of thermal transient
impedance junction to case versus pulse duration.
0
1E-3
1E-2
1E-1
1E+0
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
IR(µA)
Zth(j-c)/Rth(j-c)
1E+5
1.0
Tj=150°C
1E+4
0.8
Tj=125°C
Tj=100°C
1E+3
δ = 0.5
0.6
0.4
T
δ = 0.2
0.2
δ = 0.1
Single pulse
δ=tp/T
tp(s)
0.0
1E-4
1E-3
1E-2
1E-1
tp
1E+2
Tj=50°C
1E+1
Tj=25°C
1E+0
1E+0
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
Tj=75°C
0
5
10
15
20
25
VR(V)
30
35
40
45
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
C(nF)
200
5.0
F=1MHz
Tj=25°C
100
Typical values
Tj=125°C
Tj=25°C
1.0
10
VR(V)
0.1
1
2
5
10
20
50
1
0.0
Tj=125°C
VFM(V)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
3/5
STPS6045CP/CPI/CW
PACKAGE MECHANICAL DATA
SOT-93
DIMENSIONS
REF.
A
C
D
D1
E
F
F3
F4
G
H
L
L2
L3
L5
L6
O
Millimeters
Min.
4.70
1.90
Typ.
2.50
2.00
0.50
1.10
1.75
2.10
10.80
14.70
18.0
3.95
31.00
4.00
Inches
Max. Min. Typ. Max.
4.90 1.185
0.193
2.10 0.075
0.083
0.098
0.078
0.78 0.020
0.031
1.30 0.043
0.051
0.069
0.083
11.10 0.425
0.437
15.20 0.279
0.598
12.20
0.480
16.20
0.638
0.709
4.15 0.156
0.163
1.220
4.10 0.157
0.161
PACKAGE MECHANICAL DATA
TOP-3I (isolated)
DIMENSIONS
REF.
Millimeters
Min.
A
B
C
D
E
F
G
H
J
K
L
P
R
4/5
Typ.
4.4
1.45
14.35
0.5
2.7
15.8
20.4
15.1
5.4
3.4
4.08
1.20
4.60
Inches
Max.
Min.
4.6
1.55
15.60
0.7
2.9
16.5
21.1
15.5
5.65
3.65
4.17
1.40
0.173
0.057
0.565
0.020
0.106
0.622
0.815
0.594
0.213
0.134
0.161
0.047
Typ.
Max.
0.181
0.061
0.614
0.028
0.114
0.650
0.831
0.610
0.222
0.144
0.164
0.055
0.181
STPS6045CP/CPI/CW
PACKAGE MECHANICAL DATA
TO-247
DIMENSIONS
V
REF.
Dia.
V
A
H
L5
L
L2 L4
F2
F1
L1
F3
V2
F4
D
L3
F(x3)
M
G
=
■
■
■
■
E
Millimeters
Min. Typ.
A
4.85
D
2.20
E
0.40
F
1.00
F1
3.00
F2
2.00
F3 2.00
F4 3.00
G
10.90
H 15.45
L 19.85
L1 3.70
L2
18.50
L3 14.20
L4
34.60
L5
5.50
M
2.00
V
5°
V2
60°
Dia. 3.55
Max.
5.15
2.60
0.80
1.40
2.40
3.40
15.75
20.15
4.30
14.80
3.00
3.65
Inches
Min. Typ. Max.
0.191
0.203
0.086
0.102
0.015
0.031
0.039
0.055
0.118
0.078
0.078
0.094
0.118
0.133
0.429
0.608
0.620
0.781
0.793
0.145
0.169
0.728
0.559
0.582
1.362
0.216
0.078
0.118
5°
60°
0.139
0.143
=
Type
Marking
Package
Weight
Base qty
Delivery mode
STPS6045CP
STPS6045CP
SOT-93
3.97 g.
30
Tube
STPS6045CPI
STPS6045CPI
TOP-3I
4.46 g.
120
Bulk
STPS6045CW
STPS6045CW
TO-247
4.36 g.
30
Tube
Cooling method: by conduction (C)
Recommended torque value: 0.8 N.m.
Maximum torque value: 1.0 N.m.
Epoxy meets UL94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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