STx25NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ TJMAX Type STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND RDS(on) max 650 V ID 3 3 0.16 Ω 1 21 A 21 A 21 A(1) 21 A 21 A 1 TO-220 The worldwide best RDS(on)*area amongst the fast recovery diode devices ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Extremely high dv/dt and avalanche capabilities 2 D2PAK TO-220FP 1. Limited only by maximum temperature allowed ■ 1 3 2 3 12 I2PAK Figure 1. 2 3 1 TO-247 Internal schematic diagram Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STB25NM60ND 25NM60ND D²PAK Tape and reel STI25NM60ND 25NM60ND I²PAK Tube STF25NM60ND 25NM60ND TO-220FP Tube STP25NM60ND 25NM60ND TO-220 Tube STW25NM60ND 25NM60ND TO-247 Tube March 2009 Rev 4 1/18 www.st.com 18 Contents STx25NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 .............................................. 9 STx25NM60ND 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, D2PAK I2PAK, TO-247 TO-220FP VDS Drain-source voltage (VGS = 0) 600 VGS Gate-source voltage ±25 V V (1) A ID Drain current (continuous) at TC = 25 °C 21 21 ID Drain current (continuous) at TC = 100 °C 13 13(1) A Drain current (pulsed) 84 84(1) A Total dissipation at TC = 25 °C 160 40 W IDM (2) PTOT dv/dt(3) Peak diode recovery voltage slope 40 Viso Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature TJ V/ns 2500 V –55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 21 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb Thermal resistance junction-ambient max Tl Table 4. Symbol I²PAK TO-247 D²PAK TO-220FP 0.78 62.5 Maximum lead temperature for soldering purpose 50 30 300 Unit 3.1 °C/W 62.5 °C/W °C/W °C Avalanche characteristics Parameter Max value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 10 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) 850 mJ 3/18 Electrical characteristics 2 STx25NM60ND Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. On/off states Value Symbol Parameter Test conditions Unit Min. Typ. Max. Drain-source breakdown voltage ID = 1 mA, VGS = 0 Drain source voltage slope VDD= 480 V, ID= 21 A, VGS= 10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating @125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 10.5 A 0.13 0.16 Ω Typ. Max. Unit V(BR)DSS dv/dt(1) 600 V 48 3 V/ns 1. Characteristic value at turn off on inductive load Table 6. Symbol (1) Dynamic Parameter Test conditions Min. Forward transconductance VDS = 15 V, ID = 10.5 A 17 Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 2400 150 15 Coss eq.(2) Equivalent output capacitance VGS = 0, VDS = 0 to 480 V 320 pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 10.5 A RG = 4.7 Ω VGS = 10 V (see Figure 23), (see Figure 18) 60 30 50 40 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 21 A, VGS = 10 V, (see Figure 19) 80 15 40 nC nC nC Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level = 20 mV Open drain 1.6 Ω gfs Ciss Coss Crss Rg S pF pF pF 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/18 STx25NM60ND Electrical characteristics Table 7. Symbol Source drain diode Parameter Test conditions Min. Typ. Max. Unit 21 84 A A 1.3 V ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 21 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 21 A, VDD = 60 V di/dt=100 A/µs (see Figure 20) 160 1 15 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 21 A,VDD = 60 V di/dt=100 A/µs, TJ = 150 °C (see Figure 20) 230 2 19 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 5/18 Electrical characteristics STx25NM60ND 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK, I²PAK Figure 3. Thermal impedance for TO-220, D²PAK, I²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/18 STx25NM60ND Figure 8. Output characteristics Figure 10. Transconductance Electrical characteristics Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/18 Electrical characteristics STx25NM60ND Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/18 STx25NM60ND 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/18 Package mechanical data 4 STx25NM60ND Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/18 STx25NM60ND Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/18 Package mechanical data STx25NM60ND TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_J 12/18 STx25NM60ND Package mechanical data TO-262 (I2PAK) mechanical data mm. inch DIM. Min. Typ. Max. Min. Typ. Max. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 13/18 Package mechanical data STx25NM60ND D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° 0079457_M 14/18 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° STx25NM60ND Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 Typ Max. 5.15 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 5.50 15/18 Packing mechanical data 5 STx25NM60ND Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 16/18 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STx25NM60ND 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 15-Nov-2007 1 First release. 22-Jan-2008 2 Document status promoted from target specification to preliminary data. 08-Apr-2008 3 – Updated Table 3: Thermal data on page 3; – Document status promoted from preliminary data to datasheet. 03-Mar-2009 4 Qg value has been updated. 17/18 STx25NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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