STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET Features VDSS (@Tjmax) Type RDS(on) max ID 3 2 3 STD8NM60N 650 V <0.65 Ω 7A STD8NM60N-1 650 V <0.65 Ω 7A STF8NM60N 650 V <0.65 Ω 7 A(1) STP8NM60N 650 V <0.65 Ω 7A 2 1 IPAK TO-220 1. Limited only by maximum temperature allowed 3 3 1 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 1 DPAK Figure 1. Application ■ 1 2 TO-220FP Internal schematic diagram Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order code Marking Package Packaging STD8NM60N D8NM60N DPAK Tape & reel STD8NM60N-1 D8NM60N-1 IPAK Tube STF8NM60N F8NM60N TO-220FP Tube STP8NM60N P8NM60N TO-220 Tube January 2008 Rev 2 1/17 www.st.com 17 Contents STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 ................................................ 9 STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220 DPAK/IPAK Unit TO-220FP VDS Drain-source voltage (VGS = 0) 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 7 7 (1) A ID Drain current (continuous) at TC = 100 °C 4.3 4.3 (1) A IDM (2) Drain current (pulsed) 28 28 (1) A PTOT Total dissipation at TC = 25 °C 70 25 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s;TC = 25 °C) -- 2500 V dv/dt (3) Tj Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 15 V/ns -55 to 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 7A, di/dt ≤ 400A/µs, VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220 DPAK/IPAK TO-220FP 1.78 5 Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-amb 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Max value Unit Tl Table 4. Symbol °C/W Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V) 200 mJ 3/17 Electrical characteristics 2 STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS dv/dt(1) 1. Parameter Drain-source breakdown voltage Drain-source voltage slope Test conditions ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 600 VDD = 480 V, ID = 7 A, V 38 VGS =10 V VDS = Max rating, V/ns VDS = Max rating,Tc = 125 °C 1 100 µA µA Gate body leakage current (VDS = 0) VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 3.5 A 0.56 0.65 Ω Min. Typ. Max. Unit IDSS Zero gate voltage drain current (VGS = 0) IGSS 2 Characteristics value at turn off on inductive load Table 6. Symbol Dynamic Parameter Test conditions gfs(1) Forward transconductance VDS = 15 V, ID= 3.5 A 15 S Ciss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 560 37 2 pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 480 V 153 pF RG Gate input resistance f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain 6 Ω Qg Total gate charge Gate-source charge Gate-drain charge 19 3 10 nC nC nC Coss Crss Coss eq.(2) Qgs Qgd 1. On/off states VDD = 480 V, ID = 7 A VGS = 10 V (see Figure 19) Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/17 STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Electrical characteristics Min. VDD = 300 V, ID = 3.5 A, Typ. Max. 10 12 40 10 RG = 4.7 Ω, VGS = 10 V (see Figure 18), (see Figure 23) Unit ns ns ns ns Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 7 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/µs, VDD = 30 V, Tj = 25 °C (see Figure 20) 310 2.40 15 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7A, di/dt = 100 A/µs, VDD = 30 V, Tj=150°C (see Figure 20) 480 3.50 15 ns µC A trr Qrr IRRM trr Qrr IRRM Test conditions Min. Typ. Max. Unit 7 28 A A 1.3 V 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/17 Electrical characteristics STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 4. Safe operating area for DPAK / IPAK Figure 5. Thermal impedance for DPAK /IPAK Figure 6. Safe operating area for TO-220FP Thermal impedance for TO-220FP 6/17 Figure 3. Figure 7. Thermal impedance for TO-220 STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N Figure 8. Output characteristics Figure 10. Transconductance Figure 9. Electrical characteristics Transfer characteristics Figure 11. Static-drain source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/17 Electrical characteristics STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/17 STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N 3 Test circuit Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/17 Package mechanical data 4 STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/17 STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/17 Package mechanical data STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/17 L5 1 2 3 L4 STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N Package mechanical data TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 13/17 Package mechanical data STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 14/17 STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 15/17 Revision history 6 STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N Revision history Table 9. 16/17 Document revision history Date Revision Changes 29-Aug-2007 1 First release 07-Jan-2008 2 IDSS value has been corrected on Table 5: On/off states STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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