STB14NM65N, STF14NM65N STI14NM65N,STP14NM65N,STW14NM65N N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features Type VDSS (@TJmax) RDS(on) max ID STI14NM65N 710 V < 0.38 Ω 12 A STB14NM65N 710 V < 0.38 Ω 12 A STF14NM65N 710 V < 0.38 Ω 12 A(1) STP14NM65N 710 V < 0.38 Ω 12 A STW14NM65N 710 V < 0.38 Ω 12 A 3 12 3 1 2 I²PAK TO-220 3 1 D²PAK 3 1. Limited only by maximum temperature allowed 1 TO-247 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Figure 1. Application ■ 2 3 1 2 TO-220FP Internal schematic diagram Switching applications Description This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STI14NM65N 14NM65N I²PAK Tube STB14NM65N 14NM65N D²PAK Tape and reel STF14NM65N 14NM65N TO-220FP Tube STP14NM65N 14NM65N TO-220 Tube STW14NM65N 14NM65N TO-247 Tube October 2008 Rev 2 1/18 www.st.com 18 Contents STB/F/I/P/W14NM65N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STB/F/I/P/W14NM65N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220, TO-247 D²PAK, I²PAK Unit TO-220FP VDS Drain-source voltage (VGS=0) 650 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 12 12(1) A ID Drain current (continuous) at TC = 100 °C 7.6 7.6 (1) A IDM (2) Drain current (pulsed) 48 48(1) A PTOT Total dissipation at TC = 25 °C 125 30 W dv/dt (3) Peak diode recovery voltage slope 15 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature TJ V/ns -- 2500 V -55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 12 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Rthj-pcb Thermal resistance junction-pcb max Tl Table 4. Symbol I²PAK D²PAK TO-247 1 62.5 -- Maximum lead temperature for soldering purposes -- TO-220FP 4.2 °C/W -- 50 62.5 °C/W 30 -- -- °C/W 300 °C Avalanche characteristics Parameter IAS Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD= 50 V) Max value Unit 3 A 300 mJ 3/18 Electrical characteristics 2 STB/F/I/P/W14NM65N Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 dv/dt (1) Drain source voltage slope VDD = 520 V, ID=12 A, VGS=10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 6 A 650 V 30 2 3 V/ns Ω 0.330 0.380 1. Characteristic value at turn off on inductive load Table 6. Symbol Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS=15 V, ID = 6A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Coss eq(2) Qg Qgs Qgd Min. Typ. Max. Unit 10 S VDS = 50 V, f = 1 MHz, VGS = 0 1300 90 8 pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 520 V 150 pF Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 12 A, VGS = 10 V, (see Figure 19) 45 7 25 nC nC nC 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/18 STB/F/I/P/W14NM65N Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min Typ Max 11 13 55 20 VDD =325 V, ID = 6 A RG = 4.7 Ω VGS = 10 V (see Figure 18) Unit ns ns ns ns Source drain diode Parameter Test conditions Min Typ Source-drain current Source-drain current (pulsed) Max Unit 12 48 A A 1.3 V Forward on voltage ISD = 12 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs VDD = 100 V (see Figure 20) 390 5 25 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs VDD = 100 V, TJ = 150 °C (see Figure 20) 530 7 25 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/18 Electrical characteristics STB/F/I/P/W14NM65N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK / I²PAK Figure 3. Thermal impedance for TO-220 / D²PAK / I²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP 6/18 STB/F/I/P/W14NM65N Electrical characteristics Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance 7/18 Electrical characteristics STB/F/I/P/W14NM65N Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/18 STB/F/I/P/W14NM65N 3 Test circuit Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/18 Package mechanical data 4 STB/F/I/P/W14NM65N Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/18 STB/F/I/P/W14NM65N Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/18 Package mechanical data STB/F/I/P/W14NM65N TO-220FP mechanical data mm. DIM. Min. A 4.4 inch Typ. Max. Min. Typ. 4.6 0.173 0.181 Max. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/18 L5 1 23 L4 STB/F/I/P/W14NM65N Package mechanical data TO-262 mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 13/18 Package mechanical data STB/F/I/P/W14NM65N D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° 0079457_M 14/18 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° STB/F/I/P/W14NM65N Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e Typ Max. 5.15 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 5.50 15/18 Packaging mechanical data 5 STB/F/I/P/W14NM65N Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 MAX. 0.449 0.456 F 11.4 11.6 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 16/18 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB/F/I/P/W14NM65N 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 15-Feb-2008 1 First release 14-Oct-2008 2 Table 4: Avalanche characteristics has been corrected. 17/18 STB/F/I/P/W14NM65N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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