STD6NM60N - STD6NM60N-1 STF6NM60N - STP6NM60N N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features Type VDSS (@Tjmax) RDS(on) ID STD6NM60N 650V <0.92Ω 4.6A STD6NM60N-1 650V <0.92Ω 4.6A STF6NM60N 650V <0.92Ω 4.6A (1) STP6NM60N 650V <0.92Ω 4.6A 3 3 1 2 TO-220 1. Limited only by maximum temperature allowed 1 2 TO-220FP 3 3 1 2 1 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance DPAK Description IPAK Internal schematic diagram This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Application ■ Switching applications Order codes Part number Marking Package Packaging STD6NM60N-1 D6NM60N IPAK Tube STD6NM60N D6NM60N DPAK Tape & reel STF6NM60N F6NM60N TO-220FP Tube STP6NM60N P6NM60N TO-220 Tube June 2007 Rev 2 1/17 www.st.com 17 Contents STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 ................................................ 9 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220 DPAK/IPAK TO-220FP VDS Drain-source voltage (VGS=0) 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25°C 4.6 4.6 (1) A ID Drain current (continuous) at TC = 100°C 2.9 2.9 (1) A IDM (2) Drain current (pulsed) 18.4 18.4 (1) A PTOT Total dissipation at TC = 25°C 45 20 W dv/dt (3) VISO Tj Tstg Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) 15 V/ns -- Operating junction temperature Storage temperature 2500 -55 to 150 V °C 1. Limited by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤4.6A, di/dt ≤400A/µs, VDD = 80% V(BR)DSS Table 2. Thermal data Value Symbol Parameter Unit TO-220 DPAK/IPAK TO-220FP 2.78 6.25 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Value Unit Tl Table 3. Symbol °C/W Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD= 50V) 65 mJ 3/17 Electrical characteristics 2 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS dv/dt(1) 1. On/off states Parameter Drain-source breakdown voltage Drain-source voltage slope Test conditions ID = 1mA, VGS= 0 Min Typ Max Unit 600 V VDD= 400V, VGS = 10V, 40 ID = 4.6A VDS = Max rating, V/ns VDS = Max rating @125°C 1 100 µA µA Gate body leakage current (VDS = 0) VGS = ±20V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 3 4 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 2.3A 0.85 0.92 Ω IDSS Zero gate voltage drain current (VGS = 0) IGSS 2 Characteristics value at turn off on inductive load Table 5. Dynamic Symbol Parameter Test conditions gfs (1) Forward transconductance VDS =15V, ID = 2.3A Input capacitance Output capacitance Reverse transfer capacitance (2) Min. Typ. Max. Unit 4 S VDS =50V, f=1 MHz, VGS=0 420 30 4 pF pF pF Output equivalent capacitance VGS =0V, VDS =0V to 480V 70 pF Rg Gate input resistance f=1MHz Gate DC Bias=0 test signal level=20mV open drain 6 Ω Qg Total gate charge Gate-source charge Gate-drain charge VGS =10V 13 2 7 nC nC nC Ciss Coss Crss Coss eq. Qgs Qgd VDD=480V, ID = 4.6A (see Figure 18) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/17 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. 10 8 40 9 VDD= 300V, ID = 2.3A, RG= 4.7Ω, VGS = 10V (see Figure 17) Unit ns ns ns ns Source drain diode Max Unit Source-drain current 4.6 A ISDM(1) Source-drain current (pulsed) 18.4 A VSD(2) Forward on voltage 1.3 V ISD trr Qrr IRRM trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min Typ. ISD= 4.6A, VGS=0 ISD= 4.6A, di/dt = 100A/µs, VDD=20V, Tj= 25°C (see Figure 19) ISD= 4.6A, di/dt = 100A/µs, VDD=20V, Tj= 150°C (see Figure 19) 300 2 12 ns µC A 470 3 12 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/17 Electrical characteristics STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Safe operating area for DPAK/IPAK Figure 6. Thermal impedance for DPAK/IPAK 6/17 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Electrical characteristics Figure 7. Output characteristics Figure 8. Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 7/17 Electrical characteristics STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Figure 13. Normalized gate threshold voltage vs temperature Figure 14. Normalized on resistance vs temperature Figure 15. Source-drain diode forward characteristics Figure 16. Normalized BVDSS vs temperature 8/17 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N 3 Test circuit Test circuit Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform 9/17 Package mechanical data 4 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/17 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/17 Package mechanical data STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/17 L5 1 2 3 L4 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Package mechanical data TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 13/17 Package mechanical data STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 14/17 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 15/17 Revision history 6 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Revision history Table 8. 16/17 Revision history Date Revision Changes 09-May-2007 1 First release 01-Jun-2007 2 Corrected value on Table 7: Source drain diode STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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