T2550H-600T ® HIGH TEMPERATURE TRIAC FOR HOT APPLIANCES MAIN FEATURES : HIGH JUNCTION TEMPERATURE: Tj (MAX) = 150°C IT(RMS) = 25 A VDRM/VRRM = 600 V SENSITIVITY : IGT (MAX) = 50mA A2 A1 A2 DESCRIPTION Specifically developed for use in high temperature and harsh environments, the T2550H-600T triac is perfectly suited to driving heating elements found in hot appliances such as ovens, electric ranges or halogen ranges. The T2550H-600T, which is specified for use in temperature up to Tj = 150 °C, offers the additional benefit of improved thermal resistance (1 °C/W). Thanks to this feature, heatsink dimensionning can be optimized to suit typical conditions in such applications. The devices surge features, which have proven to be highly performing, ensure safe operation under peak inrush current conditions for example, in halogen ranges. A1 A2 G TO-220 ABSOLUTE MAXIMUM RATINGS Symbol VRRM VDRM IT(RMS) ITSM I2t dI/dt Tstg Tj Parameter Value Unit Tj = 150 °C 600 V Tc = 120 °C 25 A tp = 8.3 ms 260 A tp = 10 ms 250 I t Value for fusing tp = 10 ms 310 A2s Critical rate of rise of on-state current Repetitive F = 50 Hz 20 A/µs (Tj initial = 25 °C) IG = 60 mA tr ≤100ns Non Repetitive 100 Repetitive peak-off state voltage RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) 2 Storage and operating junction temperature range June 1999 - Ed: 1 - 40 to + 150 °C 1/5 T2550H-600T THERMAL RESISTANCES Symbol Parameter Rth(j-c) Junction to case for DC Rth(j-c) Junction to case for AC 360 ° conduction angle (F = 50 Hz) Value Unit 1.3 °C/W 1 °C/W Value Unit MIN 5 mA MAX 50 GATE CHARACTERISTICS PGM = 10 W (tp = 20 µs) PG(AV) = 1 W Symbol IGT IGM = 4 A (tp = 20 µs) Test Conditions RL=33 Ω VD=12V (DC) VGT VD=12V (DC) VGD VD=VDRM IH IT= 500 mA IL IG = 1.2 IGT VTM ITM = 35 A IDRM IRRM Quadrant Tj = 25 °C RL=33 Ω I - II - III Tj = 25 °C I - II - III MAX 1.3 V Tj = 150 °C I - II - III MIN 0.15 V MAX 75 mA MAX 90 mA Tj = 25 °C MAX 1.5 V VD = VDRM Tj = 25 °C MAX 5 µA VR = VRRM Tj = 150 °C MAX 8.5 mA VD / VR = 400 V (operating application conditions) Tj = 150 °C MAX 5.5 dV/dt VD= 67% VDRM Tj = 150 °C MIN 250 V/µs (dI/dt)c (dV/dt)c = 5 V/µs Tj = 150 °C MIN 10 A/ms RL=3.3 kΩ Gate open Tj = 25 °C Tj = 25 °C tp = 380 µs Gate open I - II - III Without snubber 7 ORDER INFORMATION 2/5 T 25 Triac Current 50 H - High Gate Sensitivity Temperature Triac 600 T Voltage Package T: TO-220 T2550H-600T Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact. P(W) P(W) 35 Tcase (°C) 35 Rth=3°C/W 30 25 Rth=0°C/W 120 20 α = 90° 15 Rth=1°C/W 25 α = 120° 20 Rth=2°C/W 30 α = 180° 130 15 α = 60° 140 10 10 α = 30° 5 5 IT(RMS)(A) 0 0.0 2.5 5.0 0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 Fig. 3: RMS on-state current versus case temperature. α = 180° 0 Tamb(°C) 25 50 75 100 125 150 150 Fig. 4: Relative variation of thermal impedance versus pulse duration. IT(RMS)(A) K=[Zth/Rth] 30 1.00 α = 180° 25 Zth(j-c) 20 Zth(j-a) 0.10 15 10 5 tp(s) Tcase(°C) 0 0 25 50 75 100 125 150 Fig. 5: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). 0.01 1E-3 IGT IH & IL 1.0 0.5 Tj(°C) -20 0 20 40 60 80 1E+0 1E+1 1E+2 5E+2 ITSM(A) 1.5 0.0 -40 1E-1 Fig. 6: Surge peak on-state current versus number of cycles. IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C] 2.5 2.0 1E-2 100 120 140 160 220 200 180 160 140 120 100 80 60 40 20 0 Tj initial=25°C F=50Hz Non repetitive Repetitive Number of cycles 1 10 100 1000 3/5 T2550H-600T Fig. 8: On-state characteristics (maximum values). Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. ITM(A) ITSM(A),I²t(A²s) 300 2000 Tj initial=25°C 1000 100 ITSM dI/dt limitation: 100A/µs Tj=Tj max. I²t 100 tp(ms) 10 0.01 Tj max.: Vto = 0.85 V Rd = 19 m Ω Tj=25°C 10 VTM(V) 0.10 1.00 1 0.0 10.00 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 10: Typical variation of leakage current versus junction temperature for different values of blocking voltage. Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature (typical values). IDRM/IRRM(mA) (dI/dt)c [Tj]/(dI/dt)c [Tj = 150°C] 1E+1 8 7 VD=VR=600V 1E+0 6 VD=VR=400V 5 VD=VR=200V 1E-1 4 3 1E-2 2 1 0 25 Tj(°C) Tj(°C) 50 75 100 125 1E-3 50 150 75 100 Fig. 11: Acceptable repetitive peak off state voltage versus thermal resistance case-ambient. VDRM/VRRM(V) 800 Tj=150°C Rth(j-c)=1°C/W 700 600 500 400 300 200 100 0 4/5 Rth(c-a)(°C/W) 0 2 4 6 8 10 12 14 16 18 20 125 150 T2550H-600T PACKAGE MECHANICAL DATA TO-220 (Plastic) B DIMENSIONS C b2 REF. Millimeters Min. A L F I A l4 c2 a1 l3 Typ. 15.20 a1 Max. Inches Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F I 6.20 3.75 6.60 0.244 3.85 0.147 0.259 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 l2 a2 b1 M c1 e M 2.60 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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