FAIRCHILD FQT1N60CTF-WS

N-Channel QFET® MOSFET
600V, 0.2 A, 11.5 Ω
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
• 0.2 A, 600 V, RDS(on)=9.3 Ω(7\S.)@VGS=10 V, ID=0.1 A
• Low Gate Charge (Typ. nC)
• Low Crss (Typ. pF)
• 100% Avalanche Tested
• RoHS Compliant
D
D
S
G
G
SOT-223
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
FQT1N60C
600
Unit
V
±30
V
-Continuous (TC = 25oC)
0.2
-Continuous (TC = 100oC)
- Pulsed
A
0.12
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
0.2
A
EAR
Repetitive Avalanche Energy
(Note 1)
0.2
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
0.8
A
(Note 2)
33
mJ
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(Note 1)
2.1
W
0.02
W/oC
-55 to +150
oC
300
oC
- Derate above 25oC
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient*
Min.
Max.
-
60
Unit
oC/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2007 Fairchild Semiconductor Corporation
FQT1N60C Rev. C0
1
www.fairchildsemi.com
FQT1N60C N-Channel MOSFET
March 2013
FQT1N60C
Device Marking
FQT1N60C
Device
FQT1N60C
Package
SOT-223
Reel Size
330mm
Tape Width
12mm
Quantity
4000
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
ID = 250µA, Referenced to 25 C
-
0.6
-
V/oC
VDS = 600V, VGS = 0V
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TJ = 25oC
o
-
-
25
VDS = 480V, TC = 125oC
-
-
250
VGS = ±30V, VDS = 0V
-
-
±100
2.0
-
4.0
V
-
9.3
11.5
Ω
-
0.75
-
S
µA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250µA
Static Drain to Source On Resistance
VGS = 10V, ID = 0.1A
gFS
Forward Transconductance
VDS = 40V, ID = 0.1A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 480V, ID = 1A
VGS = 10V
(Note 4, 5)
-
130
170
pF
-
19
25
pF
-
3.5
6
pF
-
4.8
6.2
nC
-
0.7
-
nC
-
2.7
-
nC
-
7
24
ns
-
21
52
ns
-
13
36
ns
-
27
64
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 300V, ID = 1A
RG = 25Ω
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
0.2
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
0.8
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 0.2A
-
-
1.4
V
trr
Reverse Recovery Time
-
190
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 1A
dIF/dt = 100A/µs
-
0.53
-
µC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 59mH, IAS = 1.1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 0.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
©2007 Fairchild Semiconductor Corporation
FQT1N60C Rev. C0
2
www.fairchildsemi.com
FQT1N60C N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
FQT1N60C N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom: 4.5 V
0
ID, Drain Current [A]
10
ID, Drain Current [A]
Top :
-1
10
0
10
o
150 C
o
-55 C
o
25 C
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
-1
10
-2
10
※ Notes :
1. VDS = 40V
2. 250µs Pulse Test
-1
0
10
2
1
10
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
25
VGS = 10V
20
15
VGS = 20V
10
5
※ Note : TJ = 25℃
0
0.0
0.5
1.0
1.5
2.0
2.5
I DR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
30
0
10
150℃
-1
10
0.2
0.4
Figure 5. Capacitance Characteristics
1.0
1.2
1.4
Figure 6. Gate Charge Characteristics
Ciss
150
Coss
100
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
VGS, Gate-Source Voltage [V]
200
Capacitance [pF]
0.8
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
50
0.6
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
250
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
25℃
VDS = 120V
10
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 1A
0
-1
10
0
0
10
1
10
©2007 Fairchild Semiconductor Corporation
FQT1N60C Rev. C0
0
1
2
3
4
5
6
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
www.fairchildsemi.com
FQT1N60C N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
※Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 0.1 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
0.20
Operation in This Area
is Limited by R DS(on)
0.18
0
0.16
100 µs
1 ms
ID, Drain Current [A]
ID, Drain Current [A]
10
10 ms
-1
100 ms
10
1s
DC
-2
10
※ Notes :
0.14
0.12
0.10
0.08
0.06
o
1. TC = 25 C
0.04
o
2. TJ = 150 C
3. Single Pulse
0.02
-3
10
0
10
1
2
10
0.00
25
3
10
10
50
VDS, Drain-Source Voltage [V]
75
100
125
150
TC, Case Temperature [°C]
Figure 11. Transient Thermal Response Curve
10
2
Zθ JC(t), Thermal Response
D = 0 .5
10
※ N o te s :
1 . Z θ J C( t) = 6 0 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
0 .2
1
0 .1
0 .0 5
PDM
0 .0 2
10
t1
0
0 .0 1
t2
s in g le p u ls e
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
©2007 Fairchild Semiconductor Corporation
FQT1N60C Rev. C0
4
www.fairchildsemi.com
FQT1N60C N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2007 Fairchild Semiconductor Corporation
FQT1N60C Rev. C0
5
www.fairchildsemi.com
FQT1N60C N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
GS
V GS
( D r iv e r )
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a te P u ls e W id t h
D = -------------------------G a t e P u ls e P e r io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lta g e D r o p
©2007 Fairchild Semiconductor Corporation
FQT1N60C Rev. C0
6
www.fairchildsemi.com
FQT1N60C N-Channel MOSFET
Mechanical Dimensions
3.00 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.89)
(0.95)
(0.46)
1.60 ±0.20
2.30 TYP
©2007 Fairchild Semiconductor Corporation
FQT1N60C Rev. C0
0.70 ±0.10
(0.95)
7
7.00 ±0.30
(0.60)
+0.04
0.06 –0.02
(0.60)
3.50 ±0.20
1.75 ±0.20
MAX1.80
0.65 ±0.20
0.08MAX
SOT-223
°
10
+0.10
0.25 –0.05
0°~
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2007 Fairchild Semiconductor Corporation
FQT1N60C Rev. C0
8
www.fairchildsemi.com
FQT1N60C N-Channel MOSFET
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