SupreMOSTM FCA76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description • RDS(on) = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ. Qg = 218nC) process that differentiates it from preceding multi-epi based • Low Effective Output Capacitance technologies. By utilizing this advanced technology and precise • 100% Avalanche Tested process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. • RoHS Compliant This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D D G TO-3PN G DS S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current -Continuous (TC = 25oC) Units V ±30 V 76 -Continuous (TC = 100oC) A 48.1 IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current 25.3 A EAR Repetitive Avalanche Energy 5.43 mJ dv/dt -Pulsed Ratings 600 MOSFET dv/dt Ruggedness 228 A (Note 2) 8022 mJ (Note 3) Peak Diode Recovery dv/dt 100 20 (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) -Derate above 25oC V/ns 543 W 4.34 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.23 RθJS Thermal Resistance, Case to Heat Sink (Typical) 0.24 RθJA Thermal Resistance, Junction to Ambient ©2010 Fairchild Semiconductor Corporation FCA76N60N Rev. A Units o C/W 40 1 www.fairchildsemi.com FCA76N60N N-Channel MOSFET May 2010 Device Marking FCA76N60N Device FCA76N60N Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units 600 - - V ID = 1mA, Referenced to 25 C - 0.73 - V/oC VDS = 480V, VGS = 0V Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 1mA, VGS = 0V,TJ = 25oC o - - 10 VDS = 480V, TJ = 125oC - - 100 VGS = ±30V, VDS = 0V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10V, ID = 38A - 28 36 mΩ gFS Forward Transconductance VDS = 40V, ID = 38A - 88 - S VDS = 100V, VGS = 0V f = 1MHz - 9310 12385 pF - 370 495 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 3.1 5.0 Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 196 - pF Cosseff. Effective Output Capacitance VDS = 0V to 380V, VGS = 0V - 914 - pF Qg(tot) Total Gate Charge at 10V - 218 285 nC Qgs Gate to Source Gate Charge - 39 - nC Qgd Gate to Drain “Miller” Charge VDS = 380V, ID = 38A, VGS = 10V - 66 - nC ESR Equivalent Series Resistance (G-S) - 1.0 - Ω - 34 78 ns - 24 58 ns - 235 480 ns - 32 74 ns (Note 4) Drain Open, f=1MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380V, ID = 38A RG = 4.7Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 76 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 228 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 38A - - 1.2 V trr Reverse Recovery Time - 613 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 38A dIF/dt = 100A/μs - 16 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 25.3A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 76A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCA76N60N Rev. A 2 www.fairchildsemi.com FCA76N60N N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1000 VGS = 15.0 V 10.0 V 6.0 V 5.5 V 5.0 V 4.5 V 100 ID, Drain Current[A] ID, Drain Current[A] 1000 10 100 o 150 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 1 0.1 1 VDS, Drain-Source Voltage[V] 10 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS, Gate-Source Voltage[V] 1000 IS, Reverse Drain Current [A] 45 40 VGS = 10V 35 VGS = 20V 30 100 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 25 *Notes: TC = 25 C 0 50 100 150 200 ID, Drain Current [A] 250 1 0.2 300 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 100000 10 1000 100 10 Coss *Notes: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 FCA76N60N Rev. A VGS, Gate-Source Voltage [V] Ciss 10000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 50 RDS(ON) [mΩ], Drain-Source On-Resistance 2 VDS = 120V 8 VDS = 300V 6 VDS = 480V 4 2 Crss 1 10 100 VDS, Drain-Source Voltage [V] 0 600 3 *Notes: ID = 38A 0 40 80 120 160 200 Qg, Total Gate Charge [nC] 240 www.fairchildsemi.com FCA76N60N N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 38A 0.5 0.0 -80 160 Figure 9. Maximum Safe Operating Area -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10. Maximum Drain Current vs. Case Temperature 500 80 30μs 100 100μs 1ms 10 ID, Drain Current [A] ID, Drain Current [A] 2.5 10ms Operation in This Area is Limited by R DS(on) 1 DC *Notes: 0.1 o 1. TC = 25 C 60 40 20 o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.1 0.5 0.2 0.01 t1 0.05 t2 *Notes: 0.02 o 0.01 1. ZθJC(t) = 0.23 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.005 -5 10 FCA76N60N Rev. A PDM 0.1 -4 10 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 2 10 www.fairchildsemi.com FCA76N60N N-Channel MOSFET Typical Performance Characteristics (Continued) FCA76N60N N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCA76N60N Rev. A 5 www.fairchildsemi.com FCA76N60N N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) GS G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lta g e D r o p FCA76N60N Rev. A 6 www.fairchildsemi.com FCA76N60N N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FCA76N60N Rev. A 7 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 FCA76N60N Rev. A 8 www.fairchildsemi.com FCA76N60N N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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