SupreMOSTM FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ Features Description • RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precise process control, SupreMOS provide world class Rsp, superior switching performance and ruggedness. • Ultra Low Gate Charge (Typ.Qg = 17.8nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D D G G S D-PAK (TO-252) S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage -Continuous (TC = 25oC) FCD9N60N 600 Units V ±30 V 9.0 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current 9.0 A EAR Repetitive Avalanche Energy 9.3 mJ dv/dt -Continuous (TC = 100oC) - Pulsed (Note 1) 27 A (Note 2) 135 mJ MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt 100 (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL A 5.7 - Derate above 25oC 15 V/ns 92.6 W 0.74 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCD9N60N RθJC Thermal Resistance, Junction to Case 1.35 RθJA Thermal Resistance, Junction to Ambient 62.5 ©20010 Fairchild Semiconductor Corporation FCD9N60NTM Rev. A 1 Units o C/W www.fairchildsemi.com FCD9N60NTM N-Channel MOSFET February 2010 Device Marking FCD9N60N Device FCD9N60NTM Package D-PAK Reel Size 380mm Tape Width 16mm Quantity 2500 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 1mA, VGS = 0V, TJ = 25oC 600 - - V ID = 1mA, Referenced to 25oC - 0.8 - V/oC VDS = 480V, VGS = 0V Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current - - 10 VDS = 480V, VGS = 0V, TC = 125oC - - 100 VGS = ±30V, VDS = 0V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 4.5A - 0.330 0.385 Ω gFS Forward Transconductance VDS = 40V, ID = 4.5A - 5.3 - S VDS = 100V, VGS = 0V f = 1MHz - 735 1000 pF - 40 53 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 3.5 5.5 Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 23.7 - pF Cosseff. Effective Output Capacitance VDS = 0V to 380V, VGS = 0V - 122 - pF - 13.2 - ns - 9.6 - ns - 28.7 - ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance(G-S) VDD = 380V, ID = 4.5A RGEN = 4.7Ω (Note 4) VDS = 380V, ID = 4.5A VGS = 10V Drain Open (Note 4) - 11.5 - ns - 17.8 - nC - 4.2 - nC - 7.6 - nC - 2.65 - Ω Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - 9.0 - A ISM Maximum Pulsed Drain to Source Diode Forward Current - 27 - A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 9A - - 1.2 V trr Reverse Recovery Time - 322 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 9A dIF/dt = 100A/μs - 5.04 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 3A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 9A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCD9N60NTM Rev. A 2 www.fairchildsemi.com FCD9N60NTM N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 50 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] 60 1 10 o 150 C o -55 C o 25 C 1 *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 0.1 0.4 2. TC = 25 C 1 VDS,Drain-Source Voltage[V] 0.1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 8 VGS,Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 0.8 0.7 0.6 VGS = 10V 0.5 VGS = 20V 0.4 o 150 C 10 o 25 C 1 *Notes: 1. VGS = 0V o 0.3 *Note: TC = 25 C 0 10 20 ID, Drain Current [A] 2. 250μs Pulse Test 30 0.5 Figure 5. Capacitance Characteristics Coss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 1000 100 10 1 0.1 FCD9N60NTM Rev. A 1.5 Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] 10000 1.0 VSD, Body Diode Forward Voltage [V] 10 50000 Capacitances [pF] 9 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.9 RDS(ON) [Ω], Drain-Source On-Resistance 4 Crss *Note: 1. VGS = 0V 2. f = 1MHz 1 10 100 VDS, Drain-Source Voltage [V] 6 4 2 0 600 3 VDS = 150V VDS = 300V VDS = 480V 8 *Note: ID = 4.5A 0 5 10 15 Qg, Total Gate Charge [nC] 20 www.fairchildsemi.com FCD9N60NTM N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 4.5A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 10 50 100μs 10 8 ID, Drain Current [A] ID, Drain Current [A] 20μs 1ms Operation in This Area is Limited by R DS(on) 1 10ms DC 0.1 *Notes: 6 4 2 o 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve 2 Thermal Response [ZθJC] 1 0.5 0.2 0.1 0.1 t1 0.02 0.01 t2 *Notes: 0.01 o 1. ZθJC(t) = 1.35 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.005 -5 10 FCD9N60NTM Rev. A PDM 0.05 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FCD9N60NTM N-Channel MOSFET Typical Performance Characteristics (Continued) FCD9N60NTM N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCD9N60NTM Rev. A 5 www.fairchildsemi.com FCD9N60NTM N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) GS G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lta g e D r o p FCD9N60NTM Rev. A 6 www.fairchildsemi.com FCD9N60NTM N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters FCD9N60NTM Rev. A 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 FCD9N60NTM Rev. A 8 www.fairchildsemi.com FCD9N60NTM N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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