FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET 80 V, 60 A, 3.1 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A Max rDS(on) = 4.0 mΩ at VGS = 8 V, ID = 21 A High performance technology for extremely low rDS(on) 100% UIL Tested Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side D D D S Pin 1 S D S D S D G D D G Top S S Pin 1 S Bottom Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 60 148 (Note 1a) -Pulsed 24 A 150 Single Pulse Avalanche Energy EAS Ratings 80 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 240 125 (Note 1a) Operating and Storage Junction Temperature Range 3.2 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case (Top Source) 2.3 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 1.0 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 11 °C/W Package Marking and Ordering Information Device Marking 86300 Device FDMS86300DC ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. C1 Package Dual CoolTM Power 56 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET March 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.5 V 80 V 45 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 24 A 2.6 3.1 rDS(on) Static Drain to Source On Resistance VGS = 8 V, ID = 21 A 3.1 4.0 VGS = 10 V, ID = 24 A, TJ = 125 °C 4.1 5.0 VDD = 10 V, ID = 24 A 79 gFS Forward Transconductance 2.5 3.3 -11 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 40 V, VGS = 0 V, f = 1 MHz 5265 7005 pF 929 1235 pF 21 50 pF Ω 1.2 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) 29 47 VDD = 40 V , ID = 24 A, VGS = 10 V, RGEN = 6 Ω 25 44 ns 35 57 ns 9 18 ns Total Gate Charge VGS = 0 V to 10 V 72 101 nC Total Gate Charge VGS = 0 V to 8 V 59 84 Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 40 V ID = 24 A ns nC 26 nC 14 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. C1 VGS = 0 V, IS = 2.7 A (Note 2) 0.72 1.2 VGS = 0 V, IS = 24 A (Note 2) 0.80 1.3 IF = 24 A, di/dt = 100 A/μs 2 V 56 88 ns 42 67 nC www.fairchildsemi.com FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted RθJC Thermal Resistance, Junction to Case (Top Source) 2.3 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 1.0 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 27 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 34 RθJA Thermal Resistance, Junction to Ambient (Note 1e) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1f) 19 RθJA Thermal Resistance, Junction to Ambient (Note 1g) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1h) 61 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 11 RθJA Thermal Resistance, Junction to Ambient (Note 1l) 13 °C/W NOTES: 1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 81 °C/W when mounted on a minimum pad of 2 oz copper a. 38 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 oC, L = 0.3 mH, IAS = 40 A, VDD = 72 V, VGS = 10 V. ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. C1 3 www.fairchildsemi.com FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET Thermal Characteristics 150 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 VGS = 7 V VGS = 6.5 V 120 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 10 V 90 VGS = 8 V VGS = 6 V 60 30 0 VGS = 5.5 V 0 1 2 3 4 5 VGS = 6 V VGS = 7 V 2 1 5 0 30 60 90 120 150 ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 15 ID = 24 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) 2.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 8 V 0 Figure 1. On-Region Characteristics IS, REVERSE DRAIN CURRENT (A) 120 VDS = 5 V 90 = 150 oC 60 TJ = 25 oC 30 3 4 5 9 TJ = 125 oC 6 3 TJ = 25 oC 6 7 8 9 oC 6 200 100 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 7 VGS = 0 V 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. C1 10 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ = -55 12 VGS, GATE TO SOURCE VOLTAGE (V) 150 TJ PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 24 A 0 5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 6.5 V 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 5.5 V 4 4 1.2 www.fairchildsemi.com FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 VDD = 30 V ID = 24 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V VDD = 40 V 6 4 1000 Coss Crss 100 2 f = 1 MHz 10 VGS = 0 V 0 0 20 40 60 5 0.1 80 Figure 7. Gate Charge Characteristics 80 150 ID, DRAIN CURRENT (A) VGS = 10 V TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 120 VGS = 8 V 90 60 Limited by Package 30 o RθJC = 1.0 C/W 1 0.01 0.1 1 10 100 0 25 500 50 100 125 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 2000 P(PK), PEAK TRANSIENT POWER (W) 200 100 10 1 75 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 100 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) THIS AREA IS LIMITED BY rDS(on) 0.1 1 ms 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 81 oC/W 10 s TA = 25 oC 0.01 0.01 0.1 DC 1 10 100 400 TA = 25 oC 100 10 1 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. C1 SINGLE PULSE RθJA = 81 oC/W 1000 Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 0.01 o RθJA = 81 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. C1 6 www.fairchildsemi.com FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. C1 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. C1 8 www.fairchildsemi.com FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PowerTrench® F-PFS™ The Power Franchise® ® AccuPower™ PowerXS™ FRFET® Global Power ResourceSM AX-CAP™* Programmable Active Droop™ ® ® Green Bridge™ BitSiC QFET TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Current Transfer Logic™ Saving our world, 1mW/W/kW at a time™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ SmartMax™ Dual Cool™ and Better™ TranSiC® SMART START™ EcoSPARK® MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ ® SuperSOT™-3 MillerDrive™ Fairchild UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® ® VisualMax™ Sync-Lock™ OPTOLOGIC FastvCore™ ® VoltagePlus™ OPTOPLANAR ®* FETBench™ XS™ FlashWriter® * ® FPS™