FDC8602 Dual N-Channel PowerTrench® MOSFET 100 V, 1.2 A, 350 mΩ Features General Description Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A This Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A Semiconductor‘s advanced Power Trench® process that has High performance trench technology for extremely low rDS(on) been optimized for rDS(on), switching performance and N-Channel MOSFET is produced using Fairchild ruggedness. High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested Applications RoHS Compliant Load Switch Synchronous Rectifier D2 S1 D1 G2 S2 Pin 1 G1 SuperSOTTM -6 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG Ratings 100 Units V ±20 V 1.2 A 5 A mJ (Note 3) 1.5 Power Dissipation (Note 1a) 0.96 Power Dissipation (Note 1b) 0.69 Operating and Storage Junction Temperature Range -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 60 (Note 1a) 130 °C/W Package Marking and Ordering Information Device Marking .862 Device FDC8602 ©2011 Fairchild Semiconductor Corporation FDC8602 Rev.C Package SSOT-6 Reel Size 7 ’’ 1 Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDC8602 Dual N-Channel PowerTrench® MOSFET July 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 73 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2 3.2 -8 mV/°C VGS = 10 V, ID = 1.2 A 285 350 VGS = 6 V, ID = 0.9 A 409 575 VGS = 10 V, ID = 1.2 A, TJ = 125 °C 489 600 VDS = 10 V, ID = 1.2 A 1.3 VDS = 50 V, VGS = 0 V, f = 1MHz 53 70 pF 17 25 pF 0.8 5 pF mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Ω 1.6 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = 50 V, ID = 1.2 A, VGS = 10 V, RGEN = 6 Ω tf Fall Time Qg(TOT) Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 1.2 A 3.5 10 1.7 10 ns ns 5.4 11 ns 2.3 10 ns 1.2 2 nC 0.6 1 nC 0.4 nC 0.4 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.2 A (Note 2) IF = 1.2 A, di/dt = 100 A/μs 0.86 1.3 V 27 43 ns 12 21 nC NOTES: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 130 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 180 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 1 A, VDD = 100 V, VGS = 10 V. ©2011 Fairchild Semiconductor Corporation FDC8602 Rev.C 2 www.fairchildsemi.com FDC8602 Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 4 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 8 V VGS = 10 V VGS = 7 V 4 3 VGS = 6 V 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 1 VGS = 5 V 0 0 1 2 3 4 VGS = 5 V VGS = 6 V 3 VGS = 7 V 2 VGS = 8 V 1 0 5 0 1 2 Figure 1. On Region Characteristics 4 5 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 1200 ID = 1.2 A 1.8 VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 1.2 A 900 TJ = 125 oC 600 300 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 5 10 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 4 ID, DRAIN CURRENT (A) VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS = 5 V 3 2 TJ = 150 oC TJ = 25 oC 1 TJ = -55 oC 0 2 3 4 5 6 7 VGS = 0 V TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.2 8 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation FDC8602 Rev.C 3 1.2 www.fairchildsemi.com FDC8602 Dual N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) 10 500 VDD = 50 V ID = 1.2 A Ciss CAPACITANCE (pF) 8 VDD = 75 V VDD = 25 V 6 4 10 1 2 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.1 1.4 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 ID, DRAIN CURRENT (A) 2 IAS, AVALANCHE CURRENT (A) Crss f = 1 MHz VGS = 0 V 0 1 TJ = 25 oC TJ = 100 oC 1 0.1 0.1 1 0.005 0.1 10 tAV, TIME IN AVALANCHE (ms) 10 ms 100 ms 1s 10 s DC TA = 25 oC 1 10 100 400 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability 100 1 ms THIS AREA IS LIMITED BY rDS(on) RθJA = 180 oC/W 0.01 0.1 0.01 100 us SINGLE PULSE TJ = MAX RATED TJ = 125 oC P(PK), PEAK TRANSIENT POWER (W) Coss Figure 10. Forward Bias Safe Operating Area VGS = 10 V SINGLE PULSE o RθJA = 180 C/W o TA = 25 C 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2011 Fairchild Semiconductor Corporation FDC8602 Rev.C 4 www.fairchildsemi.com FDC8602 Dual N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 180 C/W 0.01 0.005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDC8602 Rev.C 5 www.fairchildsemi.com FDC8602 Dual N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDC8602 Dual N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDC8602 Rev.C 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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