FDP120N10 N-Channel PowerTrench® 100V, 74A, 12mΩ tm MOSFET Features Description • RDS(on) = 9.7mΩ ( Typ.)@ VGS = 10V, ID = 74A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance RDS(on) Trench Technology for Extremely Low Application • DC to DC Convertors / Synchronous Rectification • High Power and Current Handling Capability • RoHS Compliant D G G D S TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Continuous (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL - Derate above 25oC ±20 V A 52 (Note 1) 296 A (Note 2) 198 mJ 5.8 V/ns (Note 3) (TC = 25oC) Units V 74 - Continuous (TC = 100oC) - Pulsed Ratings 100 170 W 1.14 W/oC -55 to +175 o C 300 o C Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.88 RθCS Thermal Resistance, Case to Sink, Typ. 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2009 Fairchild Semiconductor Corporation FDP120N10 Rev. A 1 Units o C/W www.fairchildsemi.com FDP120N10 N-Channel PowerTrench® MOSFET March 2009 Device Marking FDP120N10 Device FDP120N10 Package TO-220 Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 100 - - V - 0.1 - V/oC Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250μA, VGS = 0V, TC = 25oC ID = 250μA, Referenced to 25oC VDS = 100V, VGS = 0V - - 1 VDS = 100V, VGS = 0V,TC = 150oC - - 500 VGS = ±20V, VDS = 0V - - ±100 2.5 - 4.5 V - 9.7 12 mΩ - 105 - S μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 74A VDS = 10V, ID = 74A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 80V ID = 74A VGS = 10V (Note 4, 5) - 4215 5605 pF - 405 540 pF - 170 255 pF - 66 86 nC - 26 - nC - 20 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 50V, ID = 74A VGS = 10V, RGEN = 4.7Ω (Note 4, 5) - 27 64 ns - 105 220 ns - 39 88 ns - 15 40 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 74 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 296 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 74A - - 1.3 V trr Reverse Recovery Time - 44 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 74A dIF/dt = 100A/μs - 67 - nC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.11mH, IAS = 60A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 74A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP120N10 Rev. A 2 www.fairchildsemi.com FDP120N10 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 3000 500 100 ID, Drain Current[A] VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 1000 ID, Drain Current[A] Figure 2. Transfer Characteristics 10 100 o o -55 C 175 C o 25 C 10 *Notes: 1. 250μs Pulse Test 1 *Notes: 1. VDS = 10V 2. 250μs Pulse Test o 0.2 0.1 2. TC = 25 C 1 1 VDS, Drain-Source Voltage[V] 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 8 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 500 0.03 0.02 VGS = 10V VGS = 20V 0.01 100 o 175 C *Note: TC = 25 C 0 50 100 150 200 ID, Drain Current [A] 250 *Notes: 1. VGS = 0V 1 0.2 300 Figure 5. Capacitance Characteristics 7000 Ciss 1400 0 0.1 FDP120N10 Rev. A Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss 1 10 VDS, Drain-Source Voltage [V] 1.4 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 4200 2800 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] Capacitances [pF] 5600 o 25 C 10 o 0.00 9 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.04 RDS(ON) [Ω], Drain-Source On-Resistance 3 8 6 4 2 0 30 3 VDS = 25V VDS = 50V VDS = 80V *Note: ID =74A 0 20 40 60 Qg, Total Gate Charge [nC] 80 www.fairchildsemi.com FDP120N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.8 1.10 1.05 1.00 0.95 0.90 -100 *Notes: 1. VGS = 0V 2. ID = 1mA -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 2.4 2.0 1.6 1.2 0.4 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 74A 0.8 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 75 1000 100 ID, Drain Current [A] ID, Drain Current [A] 20μs 100μs 1ms 10ms DC 10 Operation in This Area is Limited by R DS(on) 1 *Notes: 50 25 o 0.1 1. TC = 25 C o 0.01 0.1 2. TJ = 175 C 3. Single Pulse 1 10 VDS, Drain-Source Voltage [V] 0 25 100 200 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.2 0.1 0.1 t1 0.02 0.01 t2 *Notes: o 0.01 1. ZθJC(t) = 0.88 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.005 -5 10 FDP120N10 Rev. A PDM 0.05 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FDP120N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP120N10 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP120N10 Rev. A 5 www.fairchildsemi.com FDP120N10 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id t h D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lta g e D r o p FDP120N10 Rev. A 6 www.fairchildsemi.com FDP120N10 N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FDP120N10 Rev. A 7 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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