FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ Features Description • RDS(on) = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Application • High Power and Current Handling Capability • DC to DC Converters • RoHS Compliant • Synchronous Rectification for Telecommunication PSU • Battery Charger • AC motor drives and Uninterruptible Power Supplies • Off-line UPS D G G DS TO-220 G D S I2-PAK FDI Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted VDSS Drain to Source Voltage FDP045N10A_F102 FDI045N10A_F102 100 VGSS Gate to Source Voltage ±20 Symbol Parameter - Continuous (TC = 25oC, Silicon Limited) ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Continuous (TC = 100oC, Silicon LImited) 116 120 V A (Note 1) 656 A (Note 2) 637 mJ 6.0 V/ns (Note 3) (TC = 25oC) 263 W - Derate above 25oC 1.75 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL V 164* - Continuous (TC = 25oC, Package Limited) - Pulsed Units -55 to +175 o 300 o C C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.57 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2011 Fairchild Semiconductor Corporation FDP045N10A_F102 / FDI045N10A_F102 Rev. A1 1 Units oC/W www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET July 2011 Device Marking FDP045N10A Device FDP045N10A_F102 Package TO-220 Reel Size - Tape Width - Quantity 50 FDI045N10A FDI045N10A_F102 I2PAK - - 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 100 - - V - 0.07 - V/oC Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250µA, VGS = 0V ID = 250µA, Referenced to 25oC VDS = 80V, VGS = 0V - - 1 VDS = 80V, TC = 150oC - - 500 VGS = ±20V, VDS = 0V - - ±100 2.0 - 4.0 V - 3.8 4.5 mΩ - 132 - S µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 100A VDS = 10V, ID = 100A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Engry Releted Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge - 3960 5270 pF - 925 1230 pF - 34 - pF VDS = 50V, VGS = 0V - 1520 - pF VGS = 10V, VDS = 50V ID = 100A - 57 74 nC - 17 - nC - 8 - nC - 13 - nC VDS = 50V, VGS = 0V f = 1MHz (Note 4, 5) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time ESR Equivalent Series Resistance (G-S) VDD = 50V, ID = 100A VGS = 10V, RGEN = 4.7Ω (Note 4, 5) Drain Open, f = 1MHz - 23 56 ns - 26 62 ns - 50 110 ns - 15 40 ns - 1.9 - Ω Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 164* A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 656 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 100A - - 1.3 V trr Reverse Recovery Time 75 - ns Qrr Reverse Recovery Charge VGS = 0V, VDD = 50V, ISD = 100A dIF/dt = 100A/µs (Note 4) - 120 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3mH, IAS = 20.6A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 100A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Dual Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP045N10A_F102 / FDI045N10A_F102 Rev. A1 2 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 500 *Notes: 1. VDS = 10V 2. 250µs Pulse Test 100 100 ID, Drain Current[A] ID, Drain Current[A] VGS = 15.0V 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V o o 175 C 25 C 10 o -55 C *Notes: 1. 250µs Pulse Test o 10 0.1 2. TC = 25 C 1 1 VDS, Drain-Source Voltage[V] 2 1 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 500 IS, Reverse Drain Current [A] 4.5 RDS(ON) [mΩ], Drain-Source On-Resistance 2 3 4 5 VGS, Gate-Source Voltage[V] VGS = 10V 4.0 VGS = 20V 3.5 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 3.0 0 100 200 300 ID, Drain Current [A] 1 0.0 400 Figure 5. Capacitance Characteristics 2. 250µs Pulse Test 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 Figure 6. Gate Charge Characteristics 10000 10 VGS, Gate-Source Voltage [V] Capacitances [pF] Ciss 1000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 VDS = 20V VDS = 50V VDS = 80V 8 6 4 2 *Note: ID = 100A 0 1 10 VDS, Drain-Source Voltage [V] FDP045N10A_F102 / FDI045N10A_F102 Rev. A1 0 100 3 10 20 30 40 50 Qg, Total Gate Charge [nC] 60 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250µA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 2.0 1.5 1.0 0.5 *Notes: 1. VGS = 10V 2. ID = 100A 0.0 -100 200 Figure 9. Maximum Safe Operating Area vs. Case Temperature -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current 175 1000 100 10 100µs 125 1ms Operation in This Area is Limited by R DS(on) 1 150 ID, Drain Current [A] ID, Drain Current [A] VGS = 10V 30µs 10ms *Notes: o DC 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse 1 10 VDS, Drain-Source Voltage [V] 50 o RθJC = 0.57 C/W 0 25 100 200 Figure 11. Eoss vs. Drain to Sourece Voltage IAS, Avalanche Current [A] 50 4 3 2 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 12. Unclamped Inductive Switching Capability 5 EOSS, [µJ] 75 25 o 0.1 0.1 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0 0 25 50 75 VDS, Drain to Source Voltage [V] FDP045N10A_F102 / FDI045N10A_F102 Rev. A1 1 0.01 100 4 0.1 1 10 100 tAV, Time In Avalanche [ms] 1000 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 PDM 0.05 t1 0.02 0.01 t2 0.01 *Notes: o 1. ZθJC(t) = 0.57 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 FDP045N10A_F102 / FDI045N10A_F102 Rev. A1 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP045N10A_F102 / FDI045N10A_F102 Rev. A1 6 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP045N10A_F102 / FDI045N10A_F102 Rev. A1 7 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Package Dimensions TO-220 Dimensions in Millimeters FDP045N10A_F102 / FDI045N10A_F102 Rev. A1 8 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Package Dimensions I2PAK FDP045N10A_F102 / FDI045N10A_F102 Rev. A1 9 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I55 FDP045N10A_F102 / FDI045N10A_F102 Rev. A1 10 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ FlashWriter® * PDP SPM™ The Power Franchise® AccuPower™ FPS™ Power-SPM™ The Right Technology for Your Success™ ® Auto-SPM™ F-PFS™ PowerTrench® ® AX-CAP™* FRFET PowerXS™ ® SM BitSiC Global Power Resource Programmable Active Droop™ TinyBoost™ Build it Now™ Green FPS™ QFET® TinyBuck™ CorePLUS™ Green FPS™ e-Series™ QS™ TinyCalc™ CorePOWER™ Gmax™ Quiet Series™ TinyLogic® CROSSVOLT™ GTO™ RapidConfigure™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Saving our world, 1mW/W/kW at a time™ MegaBuck™ TinyWire™ Dual Cool™ SignalWise™ MICROCOUPLER™ TranSiC® EcoSPARK® SmartMax™ MicroFET™ TriFault Detect™ EfficentMax™ SMART START™ MicroPak™ TRUECURRENT®* ESBC™ SPM® MicroPak2™ µSerDes™ MillerDrive™ STEALTH™ ® MotionMax™ SuperFET® Motion-SPM™ SuperSOT™-3 Fairchild® UHC® mWSaver™ SuperSOT™-6 Fairchild Semiconductor® Ultra FRFET™ OptiHiT™ SuperSOT™-8 FACT Quiet Series™ UniFET™ OPTOLOGIC® SupreMOS® FACT® ® VCX™ OPTOPLANAR SyncFET™ FAST® ® VisualMax™ Sync-Lock™ FastvCore™ XS™ ®* FETBench™