FDB082N15A N-Channel PowerTrench® MOSFET 150 V, 117 A, 8.2 mΩ Features Description • RDS(on) = 6.7 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Fast Switching Speed • Low Gate Charge, QG = 64.5 nC(Typ.) • High Performance Trench Technology for Extremely Low RDS(on) Applications • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handling Capability • Battery Protection Circuit • RoHS Compliant • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D D G G S TO-263 (D2-PAK) S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt -Continuous (TC = 25oC, Silicon Limited) Unit V ±20 V 117 A -Continuous (TC = 100oC, Silicon Limited) 83 - Pulsed (Note 1) 468 A (Note 2) 542 mJ 6 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL FDB082N15A 150 - Derate above 25oC 294 W 1.96 W/oC -55 to +175 oC o 300 C Thermal Characteristics Symbol Parameter FDB082N15A RθJC Thermal Resistance, Junction to Case, Max. 0.51 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2011 Fairchild Semiconductor Corporation FDB082N15A Rev. C1 1 Unit o C/W www.fairchildsemi.com FDB082N15A N-Channel PowerTrench® MOSFET March 2013 Device Marking FDB082N15A Device FDB082N15A Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit 150 - - V - 0.08 - V/oC Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250μA, VGS = 0V, TC = 25oC ID = 250μA, Referenced to 25oC VDS = 120V, VGS = 0V - - 1 VDS = 120V, TC = 150oC - - 500 VGS = ±20V, VDS = 0V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10V, ID = 75A - 6.7 8.20 mΩ gFS Forward Transconductance VDS = 10V, ID = 75A - 139 - S VDS = 25V, VGS = 0V f = 1MHz - 4645 6040 pF - 1445 1880 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance(G-S) VDS = 75V, VGS = 0V f = 1MHz - 100 - - 4570 6040 pF - 460 1880 pF - 20 - pF - 64.5 84 nC - 19.1 - nC - 8.7 - nC - 13.5 - nC f=1MHz - 2.5 - Ω VDD = 75V, ID = 75A VGS = 10V, RGEN = 4.7Ω - 22 54 ns - 58 126 ns VDS = 120V, ID = 75A VGS = 10V (Note4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note4) - 61 132 ns - 26 62 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 117 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 468 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.25 V trr Reverse Recovery Time - 96 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 75A dIF/dt = 100A/μs - 268 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Starting TJ = 25°C, L = 3mH, ISD = 19A 3. ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2011 Fairchild Semiconductor Corporation FDB082N15A Rev. C1 2 www.fairchildsemi.com FDB082N15A N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 300 VGS = 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V 100 ID, Drain Current[A] ID, Drain Current[A] 500 100 o 175 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 10V 2. 250μs Pulse Test o 10 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 VGS, Gate-Source Voltage[V] 500 IS, Reverse Drain Current [A] 12 10 VGS = 10V 8 VGS = 20V 6 100 o 175 C 10 *Notes: 1. VGS = 0V *Note: TC = 25 C 0 100 200 300 ID, Drain Current [A] 1 0.0 400 Figure 5. Capacitance Characteristics o 25 C o 4 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 14 RDS(ON) [mΩ], Drain-Source On-Resistance 2 2. 250μs Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.5 Figure 6. Gate Charge Characteristics 10 10000 VGS, Gate-Source Voltage [V] Ciss Capacitances [pF] Coss 1000 Crss 100 *Note: 1. VGS = 0V 2. f = 1MHz 50 0.1 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 10 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDB082N15A Rev. C1 6 4 2 0 30 3 VDS = 30V VDS = 75V VDS = 120V 8 *Note: ID = 75A 0 14 28 42 56 Qg, Total Gate Charge [nC] 70 www.fairchildsemi.com FDB082N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 75A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 120 1000 100 100 10μs 10 100μs ID, Drain Current [A] ID, Drain Current [A] 2.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area 1 2.5 1ms Operation in This Area is Limited by R DS(on) 10ms SINGLE PULSE DC o 0.1 TC = 25 C 80 VGS = 10V 60 40 20 o TJ = 175 C o 0.01 0.1 o RθJC = 0.51 C/W 1 10 100 VDS, Drain-Source Voltage [V] 0 25 300 RθJC= 0.51 C/W 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Unclamped Inductive Switching Capability IAS, AVALANCHE CURRENT (A) 300 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] 100 o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0.001 0.01 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) ©2011 Fairchild Semiconductor Corporation FDB082N15A Rev. C1 4 www.fairchildsemi.com FDB082N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDB082N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 PDM 0.05 0.01 t1 0.02 0.01 *Notes: Single pulse 1E-3 -5 10 ©2011 Fairchild Semiconductor Corporation FDB082N15A Rev. C1 t2 o 1. ZθJC(t) = 0.51 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 0 10 www.fairchildsemi.com FDB082N15A N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDB082N15A Rev. C1 6 www.fairchildsemi.com FDB082N15A N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2011 Fairchild Semiconductor Corporation FDB082N15A Rev. C1 7 www.fairchildsemi.com FDB082N15A N-Channel PowerTrench® MOSFET Mechanical Dimensions D2PAK Dimensions in Millimeters ©2011 Fairchild Semiconductor Corporation FDB082N15A Rev. C1 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2011 Fairchild Semiconductor Corporation FDB082N15A Rev. C1 9 www.fairchildsemi.com FDB082N15A N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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