KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time B E Absolute Maximum Ratings Symbol TO-220 1 1.Base 2.Collector 3.Emitter TA = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 3 A ICP *Collector Current (Pulse) 6 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) PC Power Dissipation(TC=25°C) TJ Junction Temperature TSTG Storage Temperature * Pulse Test: Pulse Width=5ms, Duty Cycle<10% Thermal Characteristics Symbol RθJC TL Thermal Resistance Junction to Case Junction to Ambient Maximun Lead Temperature for Soldering Purpose : 1/8” from Case for 5 seconds © 2010 Fairchild Semiconductor Corporation KSC5603D Rev. C2 A W 150 °C -65 to +150 °C Rating Units TA = 25°C unless otherwise noted Parameter RθJA 4 100 1.25 °C/W 80 °C/W 270 °C www.fairchildsemi.com 1 KSC5603D — NPN Silicon Transistor, Planar Silicon Transistor February 2010 Symbol TA=25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=0.5mA, IE=0 1600 1689 V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 800 870 V BVEBO Emitter-Base Breakdown Voltage IE=0.5mA, IC=0 12 14.8 V Collector Cut-off Current VCES=1600V, IE=0 ICES TA=25°C 0.01 TA=125°C ICEO Collector Cut-off Current VCE=800V, VBE=0 TA=25°C μA μA 0.05 500 μA 29 35 IEBO Emitter Cut-off Current VEB=12V, IC=0 hFE DC Current Gain VCE=3V, IC=0.4A TA=25°C TA=125°C 6 15 VCE=10V, IC=5mA TA=25°C 20 43 TA=125°C 20 IC=250mA, IB=25mA TA=25°C IC=500mA, IB=50mA TA=25°C Collector-Emitter Saturation Voltage 20 100 46 0.5 1.25 V V 1.5 2.5 V V 1.2 2.5 V V V V TA=125°C TA=125°C IC=1A, IB=0.2mA TA=25°C IC=500mA, IB=50mA TA=25°C 0.74 1.2 TA=125°C 0.61 1.1 IC=2A, IB=0.4A TA=25°C 0.85 1.2 TA=125°C TA=125°C VBE(sat) Base-Emitter Saturation Voltage Cib Input Capacitance Cob 0.74 1.1 V V VEB=10V, IC=0, f=1MHz 745 1000 pF 500 Output Capacitance VCB=10V, IE=0, f=1MHz 56 fT Current Gain Bandwidth Product IC=0.1A,VCE=10V 5 VF Diode Forward Voltage IF=0.4A TA=25°C 0.76 IF=1A TA=25°C TA=125°C © 2010 Fairchild Semiconductor Corporation pF MHz 1.2 TA=125°C KSC5603D Rev. C2 μA μA 1000 0.01 TA=125°C VCE(sat) 100 1000 V V 0.83 1.5 V V www.fairchildsemi.com 2 KSC5603D — NPN Silicon Transistor, Planar Silicon Transistor Electrical Characteristics Symbol Parameter Test Condition Min. Typ. Max. Units 400 600 ns 2.1 2.3 μs 310 1000 ns 600 1100 ns 1.3 1.5 μs 180 350 RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20μs) tON Turn On Time tSTG Storage Time tF IC=0.3A, IB1=50mA, IB2=150A, VCC=125V, RL = 416Ω Fall Time TA=25°C TA=125°C TA=25°C ns 2.0 μs TA=125°C TA=25°C TA=125°C tON Turn On Time tSTG Storage Time tF IC=0.5A, IB1=50mA, IB2=250mA, VCC=125V, RL = 250Ω Fall Time ns TA=25°C TA=125°C ns TA=25°C μs TA=125°C TA=25°C TA=125°C ns ns INDUCTIVE LOAD SWITCHING (VCC=15V) tON tSTG tF Turn On Time Storage Time IC=0.3A, IB1=50mA, IB2=150mA, Vz=300V, LC=200H Fall Time TA=25°C 0.6 0.73 0.9 TA=25°C 170 250 TA=125°C tSTG tF Turn On Time TA=25°C Storage Time IC=0.5A, IB1=50mA, IB2=250mA, Vz=300V, LC=200H Fall Time TA=25°C 180 250 TA=125°C © 2010 Fairchild Semiconductor Corporation KSC5603D Rev. C2 0.7 0.84 1.0 μs μs 140 175 TA=125°C TA=25°C ns ns TA=125°C TA=25°C ns ns TA=125°C tON μs μs TA=125°C ns ns 170 200 ns ns www.fairchildsemi.com 3 KSC5603D — NPN Silicon Transistor, Planar Silicon Transistor Electrical Characteristics (Continued) TA=25°C unless otherwise noted KSC5603D — NPN Silicon Transistor, Planar Silicon Transistor Physical Dimension TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters © 2010 Fairchild Semiconductor Corporation KSC5603D Rev. C2 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FRFET® SM Global Power Resource Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ Motion-SPM¥ OptoHiT™ OPTOLOGIC® ® OPTOPLANAR AccuPower¥ Auto-SPM¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® ® FAST FastvCore¥ FETBench¥ FlashWriter®* FPS¥ F-PFS¥ ® PDP SPM™ Power-SPM¥ PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ SPM® STEALTH¥ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS¥ SyncFET¥ Sync-Lock™ ® * The Power Franchise® TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TriFault Detect¥ TRUECURRENT¥* PSerDes¥ ® UHC Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 © Fairchild Semiconductor Corporation www.fairchildsemi.com