FJD5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit C B D-PAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol E Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 4 A ICP * Collector Current (Pulse) 8 A IB Base Current (DC) 2 A IBP * Base Current (Pulse) 4 A PC Collector Dissipation 30 1.25 W W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C Value Units 99 °C/W Tc = 25°C Ta = 25°C * Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed Thermal Characteristics Symbol Rθja Ta = 25°C unless otherwise noted Parameter Thermal Resistance Junction-Ambient ** ** Device mounted on minimum pad size. © 2010 Fairchild Semiconductor Corporation FJD5304D Rev. A1 www.fairchildsemi.com 1 FJD5304D — High Voltage Fast Switching Transistor July 2010 Device Marking Device J5304D FJD5304DTM D-PAK 13” Dia - 2500 J5304D FJD5304DTF D-PAK 13” Dia - 2000 Electrical Characteristics Symbol Package Reel Size Tape Width Quantity Ta = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO 12 Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 ICES Collector Cut-off Current VCB = 700V, IE = 0 100 µA ICEO Collector Cut-off Current VCB = 400V, IB = 0 250 µA IEBO Emitter Cut-off Current VEB = 12V, IC = 0 1 mA hFE DC Current Gain VCE = 5V, IC = 10mA VCE = 5V, IC = 2.0A VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V 10 8 40 IC = 0.5A, IB = 0.1A 0.7 V IC = 1.0A, IB = 0.2A 1.0 V IC = 2.5A, IB = 0.5A 1.5 V IC = 0.5A, IB = 0.1A 1.1 V IC = 1.0A, IB = 0.2A 1.2 V IC = 2.5A, IB = 0.5A tSTG tF tSTG Storage Time Fall Time Storage Time VCLAMP=200V, IC=2.0A, IB1=0.4A, VBE(off)=-5V, L=200µH tF Fall Time VCC=250V, IC=2.0A, IB1=0.4A, IB2=-0.4A, TP=30µs VF Diode Forward Voltage IF = 2A V µs 0.1 µs 2.9 µs µs 0.2 2.5 © 2010 Fairchild Semiconductor Corporation FJD5304D Rev. A1 1.3 0.6 V www.fairchildsemi.com 2 FJD5304D — High Voltage Fast Switching Transistor Package Marking and Ordering Information Figure 1. Static Characteristic Figure 2. DC Current Gain 4.0 100 IB=300mA o hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 3.5 3.0 IB=150mA 2.5 IB=100mA 2.0 IB=50mA 1.5 1.0 TC=125 C o TC= - 25 C o TC=25 C 10 0.5 0.0 0 2 4 6 8 10 1 0.01 12 0.1 VCE [V]. COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 10 IC = 5 IB o TC=125 C 1 o TC=25 C o TC= - 25 C 0.1 0.01 0.01 0.1 1 IC = 5 IB o TC= - 25 C 1 o 0.1 0.01 10 TC=25 C o TC=125 C 0.1 IC [A], COLLECTOR CURRENT 1 10 IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Time Figure 6. Forward Biased Safe Operating Area 10 100 tSTG IC [A], COLLECTOR CURRENT tSTG & tF [µs], SWITCHING TIME 10 Figure 4. Base-Emitter Saturation Voltage 10 1 tF 0.1 VCC=250V Pulse IC_MAX 10 0.01 0.1 10µs DC IC_MAX 1µs 1 1ms 0.1 o TC = 25 C IC= 5 IB1= - 5 IB2 Single Pulse 1 0.01 10 IC [A], COLLECTOR CURRENT 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE © 2010 Fairchild Semiconductor Corporation FJD5304D Rev. A1 1 IC [A], COLLECTOR CURRENT www.fairchildsemi.com 3 FJD5304D — High Voltage Fast Switching Transistor Typical Performance Characteristics Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating Curve Vcc=50V, L = 1mH IB1=1A, IB2 = -1A 9 IC [A], COLLECTOR CURRENT PC [W], COLLECTOR POWER DISSIPATION 10 8 7 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 900 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE 20 0 0 25 50 75 100 125 150 o TC [ C], CASE TEMPERATURE © 2010 Fairchild Semiconductor Corporation FJD5304D Rev. A1 40 www.fairchildsemi.com 4 FJD5304D — High Voltage Fast Switching Transistor Typical Performance Characteristics (Continued) FJD5304D — High Voltage Fast Switching Transistor Mechanical Dimensions D-PAK Dimensions in Millimeters © 2010 Fairchild Semiconductor Corporation FJD5304D Rev. A1 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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