FAIRCHILD FDP16N50U

FDP16N50U / FDPF16N50UT
N-Channel UniFETTM Ultra FRFETTM MOSFET
500 V, 15 A, 480 mΩ
Features
• R
Description
DS(on) = 370 mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A
• Low Gate Charge (Typ. 32 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET
family based on planar stripe and DMOS technology. This MOSFET is
tailored to reduce on-state resistance, and to provide better switching
performance and higher avalanche energy strength. UniFET Ultra
FRFETTM MOSFET has much superior body diode reverse recovery
performance. Its trr is less than 50nsec and the reverse dv/dt immunity is
20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/
nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove
additional component and improve system reliability in certain
applications that require performance improvement of the MOSFET’s
body diode. This device family is suitable for switching power converter
applications such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
D
G
D
G
D
S
TO-220
G
S
TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FDP16N50U
FDPF16N50UT Unit
500
V
±30
V
-Continuous (TC = 25oC)
15
15*
9
9*
ID
Drain Current
-Continuous (TC = 100oC)
- Pulsed
(Note 1)
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
15
A
EAR
Repetitive Avalanche Energy
(Note 1)
20
mJ
dv/dt
Peak Diode Recovery dv/dt
60*
(Note 2)
610
(Note 3)
A
mJ
20
V/ns
(TC = 25oC)
200
38.5
W
- Derate above 25oC
1.59
0.3
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
60
A
-55 to +150
oC
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP16N50U
FDPF16N50UT Unit
RJC
Thermal Resistance, Junction to Case, Max.
0.63
3.3
RCS
Thermal Resistance, Junction to Ambient, Typ.
0.5
-
RJA
Thermal Resistance, Junction to Ambient, Max.
62.5
62.5
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
1
oC/W
www.fairchildsemi.com
FDP16N50U / FDPF16N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
April 2013
Device Marking
FDP16N50U
Device
FDP16N50U
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF16N50UT
FDPF16N50UT
TO-220F
-
-
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
-
-
V
ID = 250A, Referenced to 25 C
-
0.5
-
V/oC
VDS = 500V, VGS = 0V
-
-
25
VDS = 400V, TC = 125oC
-
-
250
A
VGS = ±30V, VDS = 0V
-
-
±100
3.0
-
5.0
V
-
0.37
0.48

-
23
-
S
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
o
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
Static Drain to Source On Resistance
VGS = 10V, ID = 7.5A
gFS
Forward Transconductance
VDS = 40V, ID = 7.5A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 15A
VGS = 10V
(Note 4, 5)
-
1495
1945
pF
-
235
310
pF
-
20
30
pF
-
32
45
nC
-
8.5
-
nC
-
14
-
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 15A
RG = 25
(Note 4, 5)
-
40
90
ns
-
150
310
ns
-
65
140
ns
-
80
170
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
15
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
60
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 15A
-
-
1.6
V
trr
Reverse Recovery Time
-
65
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 15A
dIF/dt = 100A/s
-
0.1
-
C
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.5mH, IAS = 15A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 16A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width  300s, Duty Cycle  2%
5. Essentially Independent of Operating Temperature Typical Characteristics
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
2
www.fairchildsemi.com
FDP16N50U / FDPF16N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
VGS
2
10
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
ID, Drain Current [A]
ID, Drain Current [A]
Figure 2. Transfer Characteristics
0
10
o
1
150 C
10
o
25 C
* Notes :
1. 250s Pulse Test
-1
* Notes :
1. VDS = 40V
2. 250s Pulse Test
o
10
2. TC = 25 C
0
-1
0
10
10
1
10
10
2
4
VDS, Drain-Source Voltage [V]
6
8
10
12
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
IDR, Reverse Drain Current [A]
RDS(ON) [], Drain-Source On-Resistance
0.6
0.5
VGS = 10V
0.4
VGS = 20V
0.3
o
1
10
150oC
o
25 C
* Notes :
1. VGS = 0V
* Note : TJ = 25 C
2. 250s Pulse Test
0
0.2
0
5
10
15
20
25
30
35
10
0.2
40
ID, Drain Current [A]
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
Ciss
* Note :
1. VGS = 0 V
Crss
2. f = 1 MHz
0
-1
10
0
10
VGS, Gate-Source Voltage [V]
Capacitances [pF]
Coss
1000
VDS = 100V
10
3000
VDS = 250V
VDS = 400V
8
6
4
2
* Note : ID = 15A
1
10
0
VDS, Drain-Source Voltage [V]
0
10
20
Q T t l G t Ch
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
3
30
40
[ C]
www.fairchildsemi.com
FDP16N50U / FDPF16N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
- FDPF16N50UT
2
10
10 s
1.1
ID, Drain Current [A]
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.0
* Notes :
1. VGS = 0 V
0.9
100 s
1
10
1 ms
10 ms
100 ms
Operation in This Area
is Limited by R DS(on)
0
10
DC
-1
* Notes :
10
2. ID = 250A
o
1. TC = 25 C
o
0.8
-100
2. TJ = 150 C
3. Single Pulse
-50
0
50
100
150
-2
10
200
0
1
10
o
2
10
TJ, Junction Temperature [ C]
10
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Drain Current
vs. Case Temperature - FDPF16N50UT
ID, Drain Current [A]
15
10
5
0
25
50
75
100
125
150
o
TC, Case Temperature [ C]
Figure 10. Transient Thermal Response Curve - FDPF16N50UT
ZJC(t), Thermal Response
D=0.5
10
0
0.2
0.1
0.05
10
-1
PDM
t1
0.02
t2
0.01
* Notes :
o
10
single pulse
-2
10
1. Z  JC(t) = 3.3 C/W Max.
2. Duty Factor, D=t1/t2
3. T JM - T C = P DM * Z JC(t)
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t Square W ave Pulse Duration [sec]
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
4
www.fairchildsemi.com
FDP16N50U / FDPF16N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
Typical Performance Characteristics (Continued)
FDP16N50U / FDPF16N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
5
www.fairchildsemi.com
FDP16N50U / FDPF16N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
D U T
V
D S
_
I
S D
L
D r iv e r
R
V
G S
V GS
( D r iv e r )
G
S am e T ype
as D U T
V
D D
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id t h
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I
S D
d i/ d t
( D U T )
IR
M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( D U T )
B o d y D io d e R e c o v e r y d v /d t
V
V
S D
D D
B o d y D io d e
F o r w a r d V o lta g e D r o p
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
6
www.fairchildsemi.com
FDP16N50U / FDPF16N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
Mechanical Dimensions
TO-220B03
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
7
www.fairchildsemi.com
FDP16N50U / FDPF16N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
Mechanical Dimensions
TO-220M03
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
6
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
9
www.fairchildsemi.com
FDP16N50U / FDPF16N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
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