FDMC86106LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 7.5 A, 103 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A HBM ESD protection level > 3 KV typical (Note 4) 100% UIL Tested RoHS Compliant Application DC - DC Conversion Bottom Top 8 1 7 6 D D D D 5 S D S D S D G D G S S S 2 3 4 MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 7.5 9.6 (Note 1a) -Pulsed 3.3 A 15 Single Pulse Avalanche Energy EAS Ratings 100 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 12 19 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 6.5 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC86106Z Device FDMC86106LZ ©2011 Fairchild Semiconductor Corporation FDMC86106LZ Rev.C1 Package Power 33 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC86106LZ N-Channel Shielded Gate PowerTrench® MOSFET June 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 μA 2.2 V 100 V 73 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 3.3 A 79 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 2.7 A 105 153 VGS = 10 V, ID = 3.3 A, TJ = 125 °C 136 178 gFS Forward Transconductance 1.0 VDS = 5 V, ID = 3.3 A 1.8 -6 mV/°C 103 11 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 232 310 pF 45 60 pF 2.4 5 pF Ω 0.7 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qg(TOT) Total Gate Charge Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 3.3 A, VGS = 10 V, RGEN = 6 Ω VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 50 V, ID = 3.3 A 4.5 10 1.3 10 ns ns 10 20 ns 1.4 10 ns 4 6 nC 2 3 nC 0.8 nC 0.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 3.3 A (Note 2) 0.85 1.3 VGS = 0 V, IS = 2 A (Note 2) 0.82 1.2 IF = 3.3 A, di/dt = 100 A/μs V 33 54 ns 23 38 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 125 °C/W when mounted on a minimum pad of 2 oz copper a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 1.0 mH, IAS = 5.0 A, VDD = 90 V, VGS = 10 V. 4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDMC86106LZ Rev.C1 2 www.fairchildsemi.com FDMC86106LZ N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 10 V VGS = 4.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 15 VGS = 4 V 12 9 VGS = 3.5 V 6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3 V 3 0 0 1 2 3 4 VGS = 3 V VGS = 3.5 V 4 VGS = 4 V 3 VGS = 4.5 V 2 1 0 5 0 3 Figure 1. On Region Characteristics 500 ID = 3.3 A VGS = 10 V ID = 3.3 A SOURCE ON-RESISTANCE (mΩ) 12 15 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 400 1.8 rDS(on), DRAIN TO NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 9 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.2 1.6 1.4 1.2 1.0 300 200 TJ = 125 oC 100 0.8 0.6 -75 -50 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V 9 6 TJ = 25 oC 3 TJ = -55 oC 0 1 2 3 4 5 20 10 6 8 10 VGS = 0 V 1 TJ = 150 oC 0.1 TJ = 25 oC 0.01 0.001 0.0 6 VGS, GATE TO SOURCE VOLTAGE (V) TJ = -55 oC 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMC86106LZ Rev.C1 4 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ = 150 oC 2 VGS, GATE TO SOURCE VOLTAGE (V) 15 12 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 6 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC86106LZ N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = 3.3 A VDD = 25 V 8 Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V 6 VDD = 75 V 4 100 Coss 10 2 f = 1 MHz VGS = 0 V 0 0 1 2 3 4 1 0.1 5 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage -1 10 9 8 7 6 5 10 Ig, GATE LEAKAGE CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 4 TJ = 100 oC 3 2 TJ = 125 oC 1 0.001 -2 10 VGS = 0 V -3 10 -4 10 TJ = 125 oC -5 10 -6 10 TJ = 25 oC -7 10 -8 10 -9 0.01 0.1 1 10 10 0 tAV, TIME IN AVALANCHE (ms) 4 8 12 16 20 24 28 32 36 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Gate Leakage Current vs Gate to Source Voltage 10 20 10 8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Crss VGS = 10 V 6 Limited by package 4 VGS = 4.5 V 2 o 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) 0.1 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10 s DC 1 10 100 400 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Forward Bias Safe Operating Area Figure 11. Maximum Continuous Drain Current vs Case Temperature ©2011 Fairchild Semiconductor Corporation FDMC86106LZ Rev.C1 1 ms THIS AREA IS LIMITED BY rDS(on) 0.01 TA = 25 oC 0.005 0.1 RθJC = 6.5 C/W 0 25 100 us 1 4 www.fairchildsemi.com FDMC86106LZ N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 500 100 10 SINGLE PULSE o RθJA = 125 C/W o 1 TA = 25 C 0.5 -4 10 -3 -2 10 -1 10 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMC86106LZ Rev.C1 5 www.fairchildsemi.com FDMC86106LZ N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMC86106LZ N-Channel Shielded Gate PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMC86106LZ Rev.C1 6 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2011 Fairchild Semiconductor Corporation FDMC86106LZ Rev.C1 7 www.fairchildsemi.com FDMC86106LZ N-Channel Shielded Gate PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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