FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 18 A, 23 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A Low Profile - 1 mm max in Power 33 RoHS Compliant Application DC - DC Conversion Top Bottom Pin 1 S D D D S S G S D S D S D G D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±20 V (Note 1a) 7 A 30 Single Pulse Avalanche Energy PD Units V 18 -Pulsed EAS Ratings 100 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 63 41 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC86102L Device FDMC86102L ©2010 Fairchild Semiconductor Corporation FDMC86102L Rev.C4 Package Power 33 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET June 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3 V 100 V 71 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 7 A 18.9 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 5.5 A 24.9 34 VGS = 10 V, ID = 7 A, TJ = 125 °C 31.9 39 gFS Forward Transconductance 1 1.8 -6 mV/°C 23 mΩ VDS = 5 V, ID = 7 A 26 S VDS = 50 V, VGS = 0 V, f = 1 MHz 999 1330 pF 178 240 pF 7.6 15 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Ω 0.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qg(TOT) Total Gate Charge Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 7 A, VGS = 10 V, RGEN = 6 Ω VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 50 V, ID = 7 A 7.7 16 2.2 10 ns ns 19 34 ns 2.4 10 ns 15 22 nC 7.3 11 nC 2.7 nC 2.3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 7 A (Note 2) 0.81 1.3 VGS = 0 V, IS = 2 A (Note 2) 0.74 1.2 IF = 7 A, di/dt = 100 A/μs V 45 72 ns 45 72 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b) 125 °C/W when mounted on a minimum pad of 2 oz copper a) 53 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 11.3 A, VDD = 90 V, VGS = 10 V. ©2010 Fairchild Semiconductor Corporation FDMC86102L Rev.C4 2 www.fairchildsemi.com FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 10 V 25 VGS = 4.5 V VGS = 4 V 20 VGS = 3.5 V 15 VGS = 3 V 10 5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 30 4 VGS = 3 V 3 VGS = 3.5 V 2 1 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 120 ID = 7 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) 2.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 0 5 VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 7 A 60 TJ = 125 oC 30 TJ = 25 oC 0 -50 -25 0 25 50 75 2 100 125 150 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V TJ = 150 oC 15 TJ = 25 oC 10 TJ = -55 oC 5 1.5 2.0 2.5 8 10 30 20 0 1.0 6 Figure 4. On-Resistance vs. Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 25 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs. Junction Temperature 30 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 90 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 4 V 3.0 3.5 10 1 TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4.0 VGS = 0 V 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current ©2010 Fairchild Semiconductor Corporation FDMC86102L Rev.C4 3 1.2 www.fairchildsemi.com FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 1000 ID = 7 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 25 V 6 VDD = 50 V 4 VDD = 75 V Coss 100 10 Crss 2 f = 1 MHz VGS = 0 V 0 0 4 8 12 1 0.1 16 1 Figure 7. Gate Charge Characteristics 30 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance vs. Drain to Source Voltage 30 TJ = 25 oC TJ = 100 oC TJ = 125 oC 25 20 VGS = 10 V 15 Limited by package VGS = 4.5 V 10 5 o RθJC = 3 C/W 1 0.01 0.1 1 10 0 25 30 50 125 150 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 40 P(PK), PEAK TRANSIENT POWER (W) 1000 10 100 us 1 ms 1 THIS AREA IS LIMITED BY rDS(on) 10 ms SINGLE PULSE TJ = MAX RATED 100 ms RθJA = 125 oC/W 1s 10s DC TA = 25 oC 0.01 0.01 100 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 0.1 75 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 0.1 1 10 100 500 TA = 25 oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC86102L Rev.C4 SINGLE PULSE RθJA = 125 oC/W 4 www.fairchildsemi.com FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMC86102L Rev.C4 5 www.fairchildsemi.com FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. 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