FDMB3800N Dual N-Channel PowerTrench® MOSFET 30V, 4.8A, 40m: Features General Description Max rDS(on) = 40m: at VGS = 10V, ID = 4.8A These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 51m: at VGS = 4.5V, ID = 4.3A Fast switching speed Low gate Charge These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. High performance trench technology for extremely low rDS(on) High power and current handling capability. RoHS Compliant Q2 D2 5 D2 6 4 G2 3 S2 Q1 D1 7 2 G1 D1 8 1 S1 MicroFET 3X1.9 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25°C (Note 1a) -Pulsed PD TJ, TSTG Ratings 30 Units V ±20 V 4.8 9 Power Dissipation TA = 25°C Note 1a) 1.6 Power Dissipation TA = 25°C (Note 1b) 0.75 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RTJA Thermal Resistance, Junction to Ambient (Note 1a) 80 RTJA Thermal Resistance, Junction to Ambient (Note 1b) 165 °C/W Package Marking and Ordering Information Device Marking 3800 Device FDMB3800N ©2012 Fairchild Semiconductor Corporation FDMB3800N Rev. C2 Package MicroFET3X1.9 1 Reel Size 7’’ Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench® MOSFET August 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient 30 ID = 250PA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V 24 mV/°C VDS = 24V, 1 VGS = 0V TJ = 55°C 10 VGS = ±20V, VDS = 0V PA ±100 nA 3 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250PA, referenced to 25°C rDS(on) Drain to Source On Resistance gFS Forward Transconductance 1 1.9 -4 mV/°C VGS = 10V, ID = 4.8A 32 40 VGS = 4.5V, ID = 4.3A 41 51 VGS = 10V, ID = 4.8A, TJ = 125°C 43 61 VDS = 5V, ID = 4.8A 14 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS =15V, VGS = 0V, f = 1MHz 350 465 pF 90 120 pF 40 60 pF : f = 1MHz 3 8 16 ns VDD = 15V, ID = 1A VGS = 10V, RGEN = 6: 5 10 ns 21 34 ns 2 10 ns 4 5.6 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VGS = 0V to 5V VDD = 15V ID = 7.5A 1.0 nC 1.5 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain - Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 1.25A (Note 2) IF = 4.8A, di/dt = 100A/Ps 0.8 1.25 A 1.2 V 17 ns 7 nC Notes: 1: RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 80°C/W when mounted on a 1 in2 pad of 2 oz copper b. 165°C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. FDMB3800N Rev.C2 2 www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 10 VGS = 10V NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 2.8 4.5V 6.0V 3.5V 8 6 3.0V 4 2 2.5V 2.6 VGS = 3.0V 2.4 2.2 2 1.8 3.5V 1.6 4.0V 1.2 1 10V 0.8 0 0 0.25 0.5 0.75 1 0 1.25 2 4 VDS, DRAIN-SOURCE VOLTAGE (V) 8 10 Figure 2. Normalized On - Resistance vs Drain Current and Gate Voltage 1.6 0.102 DRAIN TO SOURCE ON-RESISTANCE (OHM) NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics ID = 4.8A VGS = 10V 1.4 1.2 1 0.8 0.6 -50 ID = 2.4A 0.092 0.082 0.072 0.062 TJ = 125oC 0.052 0.042 TJ = 25oC 0.032 0.022 -25 0 25 50 75 100 125 150 2 3 4 o TJ, JUNCTION TEMPERATURE ( C) 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On - Resistance vs Junction Temperature Figure 4. On- Resistance vs Gate to Source Voltage 10 15 25oC 125 C IS, REVERSE DRAIN CURRENT (A) TJ = -55oC VDS = 5V ID, DRAIN CURRENT (A) 6.0V 4.5V 1.4 o 12 9 6 3 0 1.5 o TJ = 125 C 0.1 o 25 C 0.01 o -55 C 0.001 0.0001 2 2.5 3 3.5 0 4 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics FDMB3800N Rev.C2 VGS = 0V 1 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 600 VDS = 10V ID = 4.8A f = 1MHz VGS = 0 V 15V 500 8 20V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 Ciss 400 300 200 Coss 100 Crss 0 0 0 1 2 3 4 5 6 7 8 0 4 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics 12 16 20 Figure 8. Capacitance vs Drain to Source Voltage 6 100 5 rDS(on) LIMIT ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 100us 1ms 1 10ms VGS = 10V SINGLE PULSE RJA = 165oC/W 0.1 100ms 1s 10s DC TJ = 25oC 0.01 0.1 3 VGS = 4.5V 2 RJA = 80°C/W 1 0 1 10 100 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area P(pk), PEAK TRANSIENT POWER (W) VGS = 10V 4 50 75 100 125 o TA, AMBIENT TEMPERATURE ( C) 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 180 SINGLE PULSE RJA = 165°C/W TA= 25°C 150 120 90 60 30 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation FDMB3800N Rev.C2 4 www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ZJA, NORMALIZED THERMAL IMPEDANCE 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 P(pk) t1 t2 0.01 Peak TJ = TA + PDM *RJA* ZJA Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDMB3800N Rev.C2 5 www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMB3800N Dual N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout FDMB3800N Rev.C2 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDMB3800N Rev. C2 7 www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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