UNISONIC TECHNOLOGIES CO., LTD UTT10NP06 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/ P-CHANNEL) DESCRIPTION 1 The UTC UTT10NP06 incorporates an N-channel MOSFET and a P-channel MOSFET ， it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed, low gate charge and cost effectiveness. The UTC UTT10NP06 is universally applied in low voltage applications. SOP-8 1 TO-252-4 FEATURES * RDS(on) < 56mΩ @VGS=10V, ID=4A RDS(on) <64mΩ @VGS=4.5V, ID=2A * RDS(on) <68mΩ @VGS= -10V, ID= -3A RDS(on) <88mΩ @VGS= -4.5V, ID= -2A * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 1 UTT10NP06L-TN4-R UTT10NP06G-TN4-R TO-252-4 S1 UTT10NP06G-S08-R SOP-8 S1 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Pin Assignment 2 3 4 5 6 G1 D1D2 S2 G2 G1 S2 G2 D2 D2 7 D1 Packing 8 - Tape Reel D1 Tape Reel 1 of 7 QW-R502-773.F UTT10NP06 Power MOSFET MARKING TO-252-4 SOP-8 PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-773.F UTT10NP06 Power MOSFET ABSOLUTE MAXIMUM RATINGS RATINGS UNIT N-CHANNEL P-CHANNEL Drain-Source Voltage VDSS 60 -60 V Gate-Source Voltage VGSS ±20 ±20 V ID 4.5 -3 A Continuous TA=25°C Drain Current Pulsed (Note 1) IDM 20 -20 A Power Dissipation TA=25°C PD 2.0 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. : Absolute maximum ratings are stress ratings only and functional device operation is not implied. PARAMETER SYMBOL THERMAL CHARACTERISTICS PARAMETER SYMBOL θJA Junction to Ambient RATINGS 62.5 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) N-Channel PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=60V, VGS=0V, TJ=25°C VDS=48V, VGS=0V, TJ=125°C VGS=+20V VGS=-20V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA VGS=10V, ID=4A Static Drain-Source On-State Resistance RDS(ON) (Note 2) VGS=4.5V, ID=2A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2) QG VGS=4.5V, VDS=48V, ID=4A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) Rise Time tR VDS=30V, ID=1A, RG=3.3Ω, VGS=10V, RD=30Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note 2) VSD IS=1.7A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 60 1 36 44 1 10 +100 -100 V µA µA nA nA 3 56 64 V mΩ mΩ 1100 1500 80 60 pF pF pF 120 12 60 33 26 140 64 150 nC nC nC ns ns ns ns 1.2 V 3 of 7 QW-R502-773.F UTT10NP06 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) P-Channel PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=-250µA, VGS=0V VDS=-60V, VGS=0V, TJ=25°C VDS=-48V, VGS=0V, TJ=125°C VGS=+20V VGS=-20V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA VGS=-10V, ID=-3A Static Drain-Source On-State Resistance RDS(ON) (Note 2) VGS=-4.5V, ID=-2A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2) QG VGS=-4.5V, VDS=-48V, ID=-3A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) Rise Time tR VDS=-30V, ID=-1A, RG=3.3Ω VGS=-10V, RD=30Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note 2) VSD IS=-1.7A, VGS=0V Notes: 1. Pulse width limited by maximum junction temperature 2. Pulse width ≤ 300µs, Duty cycle ≤ 2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -60 V -1 µA -10 µA +100 nA -100 nA -1 48 68 -3 68 88 V mΩ mΩ 1900 2300 90 75 pF pF pF 200 30 70 48 42 280 150 230 nC nC nC ns ns ns ns -1.2 V 4 of 7 QW-R502-773.F UTT10NP06 Power MOSFET TEST CIRCUITS AND WAVEFORMS N-CHANNEL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P-CHANNEL 5 of 7 QW-R502-773.F UTT10NP06 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) Drain Current, ID (µA) N-CHANNEL Drain-Source On-State Resistance Characteristics 5 Drain Current vs. Source to Drain Voltage 1.8 1.5 4 VGS=10V, ID=4A 3 1.2 0.9 2 0.6 VGS=4.5V, ID=2A 1 0 0 0.03 0.06 0.09 0.12 0.15 Drain to Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.3 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage, VSD (V) 6 of 7 QW-R502-773.F UTT10NP06 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) P-CHANNEL Drain Current vs. Drain-Source Breakdown Voltage 300 Drain Current vs. Gate Threshold Voltage 300 250 250 200 200 150 150 100 100 50 50 0 0 20 60 80 100 40 Drain-Source Breakdown Voltage, -BVDSS (V) Drain-Source On-State Resistance Characteristics 5 0 0 0.5 1.5 3 1 2.5 2 Gate Threshold Voltage, -VTH (V) Drain Current vs. Source to Drain Voltage 2.4 2.0 4 1.6 3 VGS=-10V, ID=-3A 2 1.2 0.8 1 0.4 VGS=-4.5V, ID=-2A 0 0 0.03 0.06 0.09 0.12 0.15 Drain to Source Voltage, -VDS (V) 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage, -VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-773.F