FDMC8884 N-Channel Power Trench ® tm MOSFET 30V, 15A, 19mΩ Features General Description Max rDS(on) = 19mΩ at VGS = 10V, ID = 9.0A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.2A High performance trchnology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant Application High side in DC - DC Buck Converters Notebook battery power management Load switch in Notebook Bottom Top S D D D Pin 1 S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C V 9.0 A 40 (Note 3) Power Dissipation TC = 25°C TA = 25°C Power Dissipation TJ, TSTG ±20 24 (Note 1a) -Pulsed PD Units V 15 Single Pulse Avalanche Energy EAS Ratings 30 24 18 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 6.6 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC8884 Device FDMC8884 ©2008 Fairchild Semiconductor Corporation FDMC8884 Rev.C Package Power 33 1 Reel Size 13’’ Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET May 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V 22 VDS = 24V, VGS = 0V mV/°C 1 TJ = 125°C 250 VGS = ±20V, VDS = 0V µA ±100 nA 2.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -6 VGS = 10V, ID = 9.0A 16 19 rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 7.2A 22 30 VGS = 10V, ID = 9.0A, TJ = 125°C 22 30 VDD = 5V, ID = 9.0A 24 gFS Forward Transconductance 1.2 1.9 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 513 685 pF 110 150 pF 76 115 pF 1.4 2.1 Ω 6 12 ns 2 10 ns 15 27 ns 2 10 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 15V, ID = 9.0A, VGS = 10V, RGEN = 6Ω Total Gate Charge VGS = 0V to 10V 10 14 nC Total Gate Charge VGS = 0V to 4.5V VDD = 15V ID = 9.0A 5.0 7.0 nC Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge 1.8 nC 2.2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 9.0A (Note 2) 0.86 1.2 VGS = 0V, IS = 1.6A (Note 2) 0.76 1.2 13 18 ns 3 10 nC IF = 9.0A, di/dt = 100A/µs V NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53°C/W when mounted on a 1 in2 pad of 2 oz copper b. 125°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. Starting TJ = 25oC; N-ch: L = 1mH, IAS = 7A, VDD = 30V, VGS = 10V. FDMC8884 Rev.C 2 www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 40 4 ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 6V 30 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V VGS = 4V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 20 VGS = 3.5V 10 0 0.0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 3 VGS = 4V 1 0 2.0 0 rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 40 80 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 60 ID = 9.0A 40 TJ = 125oC 20 TJ = 25oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 40 60 30 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT (A) 10 20 ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage ID = 9.0A VGS = 10V -50 VGS = 10V VGS = 6V 1.8 0.6 -75 VGS = 4.5V 2 Figure 1. On-Region Characteristics 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 3.5V VDS = 5V 20 TJ = 150oC TJ = 25oC 10 TJ = -55oC 0 0 1 2 3 4 1 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 0.001 0.0 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics FDMC8884 Rev.C VGS = 0V 10 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1000 ID = 9.0A 8 VDD = 20V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V 6 VDD = 10V 4 2 Ciss Coss 100 f = 1MHz VGS = 0V 0 0 3 6 9 12 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 25 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 10 TJ = 25oC TJ = 100oC TJ = 125oC 20 VGS = 10V 15 Limited by Package 10 VGS = 4.5V 5 o RθJC = 6.6 C/W 1 0.01 0.1 1 10 0 25 100 50 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 60 P(PK), PEAK TRANSIENT POWER (W) 100 10 100µs 1ms 1 10ms THIS AREA IS LIMITED BY rDS(on) 100ms SINGLE PULSE TJ = MAX RATED 0.1 1s 10s o RθJA = 125 C/W DC TA = 25oC 0.01 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 125oC/W VGS = 10V TA = 25oC 10 1 0.5 -3 10 -2 10 -1 10 0 10 1 10 100 1000 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMC8884 Rev.C 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) ID, DRAIN CURRENT (A) Crss 50 0.1 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.01 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMC8884 Rev.C 5 www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC8884 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout FDMC8884 Rev.C 6 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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