FDD5353 tm ® N-Channel Power Trench MOSFET 60V, 50A, 12.3mΩ Features General Description Max rDS(on) = 12.3mΩ at VGS = 10V, ID = 10.7A 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. RoHS Compliant Application Max rDS(on) = 15.4mΩ at VGS = 4.5V, ID = 9.5A Inverter Synchronous rectifier Primary switch D D G G S D -PA K TO -2 52 (TO -252) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V 50 54 (Note 1a) -Pulsed 11.5 A 100 Single Pulse Avalanche Energy EAS Ratings 60 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 253 69 (Note 1a) Operating and Storage Junction Temperature Range 3.1 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.8 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD5353 ©2008 Fairchild Semiconductor Corporation FDD5353 Rev.C Device FDD5353 Package D-PAK (TO-252) 1 Reel Size 13’’ Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDD5353 N-Channel Power Trench® MOSFET March 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 60 V ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 48V, 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3.0 V 77 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 1.8 -8 mV/°C VGS = 10V, ID = 10.7A 10.1 12.3 VGS = 4.5V, ID = 9.5A 12.1 15.4 VGS = 10V, ID = 10.7A, TJ = 125°C 16.7 20.3 VDD = 5V, ID = 10.7A 41 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 30V, VGS = 0V, f = 1MHz f = 1MHz 2420 3215 pF 215 285 pF 120 180 pF Ω 1.7 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to 10V Qg Total Gate Charge VGS = 0V to 4.5V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 30V, ID = 10.7A, VGS = 10V, RGEN = 6Ω VDD = 30V, ID = 10.7A 11 20 ns 6 11 ns 36 58 ns 4 10 ns 46 65 nC 23 32 nC 7 nC 9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 10.7A (Note 2) 0.8 1.3 VGS = 0V, IS = 2.6A (Note 2) 0.7 1.2 28 45 ns 21 34 nC IF = 10.7A, di/dt = 100A/µs V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 40°C/W when mounted on a 1 in2 pad of 2 oz copper b) 96°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 13A, VDD = 60V, VGS = 10V. ©2008 Fairchild Semiconductor Corporation FDD5353 Rev.C 2 www.fairchildsemi.com FDD5353 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 100 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 VGS = 10V ID, DRAIN CURRENT (A) 80 VGS = 4.5V VGS = 4V 60 VGS = 3.5V 40 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 20 VGS = 3V 0 0 1 2 3 4 VGS = 3V 2.5 VGS = 4V 2.0 VGS = 4.5V 1.5 1.0 0.5 5 0 20 40 60 80 100 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 40 ID = 10.7A VGS = 10V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VDS, DRAIN TO SOURCE VOLTAGE (V) 32 ID = 10.7A 24 TJ = 125oC 16 8 TJ = 25oC 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) 80 VDS = 5V 60 TJ = 150oC 40 TJ = 25oC 20 TJ = -55oC 0 3 4 4 5 6 7 8 9 10 1.2 1.4 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 100 1 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 -50 Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 3.5V 200 100 10 TJ = 150oC 1 TJ = 25oC 0.1 TJ = -55oC 0.01 0.001 0.0 5 VGS = 0V 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2008 Fairchild Semiconductor Corporation FDD5353 Rev.C 3 www.fairchildsemi.com FDD5353 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10000 ID = 10.7A Ciss VDD = 20V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 6 VDD = 30V 4 VDD = 40V 1000 Coss 100 Crss f = 1MHz VGS = 0V 2 0 0 10 20 30 40 10 0.1 50 1 Figure 7. Gate Charge Characteristics 60 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 30 Figure 8. Capacitance vs Drain to Source Voltage 20 10 TJ = 25oC TJ = 125oC 50 VGS = 10V 40 Limited by Package 30 VGS = 4.5V 20 o RθJC = 1.8 C/W 10 1 0.01 0.1 1 10 0 25 100 50 100 125 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 5 P(PK), PEAK TRANSIENT POWER (W) 10 200 100 100us 1ms 10 THIS AREA IS LIMITED BY rDS(on) 1 10ms SINGLE PULSE TJ = MAX RATED 100ms RθJC = 1.8oC/W DC TC = 25oC 0.1 0.1 75 o tAV, TIME IN AVALANCHE(ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 1 10 100 200 VDS, DRAIN to SOURCE VOLTAGE (V) 10 SINGLE PULSE RθJC = 1.8oC/W 3 10 TC = 25oC 2 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDD5353 Rev.C VGS = 10V 4 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD5353 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJc x RθJc + TC SINGLE PULSE o RθJC = 1.8 C/W 0.001 5E-4 -6 10 -5 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 96 C/W (Note 1b) 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDD5353 Rev.C 5 www.fairchildsemi.com FDD5353 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ tm * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 ©2008 Fairchild Semiconductor Corporation FDD5353 Rev.C www.fairchildsemi.com FDD5353 N-Channel Power Trench® MOSFET TRADEMARKS