FAIRCHILD FDS86141

FDS86141
N-Channel PowerTrench® MOSFET
100 V, 7 A, 23 m
Features
General Description
 Maximum RDS(on) = 23 m at VGS = 10 V, ID = 7 A
This N-channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
maintain superior switching performance.
 Maximum RDS(on) = 36 m at VGS = 6 V, ID = 5.5 A
 High-Performance Trench Technology; Extremely Low RDS(on)
 100% UIL Tested
Applications
 RoHS Compliant
 DC-DC Conversion
D
D
D
D
G
D
5
4
D
6
3 S
D
7
2 S
D
8
1 S
G
SO-8
S
S
Pin 1
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
100
V
VGS
Gate to Source Voltage
±20
V
Drain Current -Continuous
ID
7
-Pulsed
30
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
(Note 3)
121
Power Dissipation
TA = 25 °C
(Note 1a)
5.0
Power Dissipation
TA = 25 °C
(Note 1b)
2.5
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RJC
Thermal Resistance, Junction to Case
RJA
Thermal Resistance, Junction to Ambient
(Note 1)
2.5
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDS86141
FDS86141
SO-8
13 ’’
12 mm
2500 units
© 2007 Fairchild Semiconductor Corporation
FDS86141 • Rev. C4
1
www.fairchildsemi.com
FDS86141 — N-Channel PowerTrench® MOSFET
August 2011
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-to-Source Breakdown Voltage
ID = 250 A, VGS = 0 V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 A, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
A
IGSS
Gate-to-Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4
V
100
V
67
mV/°C
On Characteristics
VGS(th)
Gate-to-Source Threshold Voltage
VGS = VDS, ID = 250 A
VGS(th)
TJ
Gate-to-Source Threshold Voltage
Temperature Coefficient
ID = 250 A, Referenced to 25°C
-10
VGS = 10 V, ID = 7 A
19
23
rDS(on)
Static Drain to Source On Resistance
VGS = 6 V, ID = 5.5 A
27
37
VGS = 10 V, ID = 7 A, TJ = 125°C
33
40
VDS = 10 V, ID = 7 A
19
gFS
Forward Transconductance
2
3.1
mV/°C
m
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
703
934
pF
186
247
pF
8.6
13
pF

0.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
VDD = 50 V, ID = 7 A,
VGS = 10 V, RGEN = 6 
Total Gate Charge
VGS = 0 V to 10 V
Total Gate Charge
VGS = 0 V to 5 V
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50 V
ID = 7 A
8.3
17
ns
3.2
10
ns
14.3
26
ns
3.2
10
ns
11.8
16.5
nC
6.7
9.4
nC
3.4
nC
3.1
nC
Drain-Source Diode Characteristics
VSD
Source-to-Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 7 A
(Note 2)
0.8
1.3
VGS = 0 V, IS = 2 A
(Note 2)
0.8
1.2
IF = 7 A, di/dt = 100 A/s
V
43
69
ns
39
62
nC
NOTES:
1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0 %.
3. Starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 9 A, VDD = 100 V, VGS = 10 V.
© 2007 Fairchild Semiconductor Corporation
FDS86141 • Rev. C4
2
www.fairchildsemi.com
FDS86141 — N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted.
30
4
ID, DRAIN CURRENT (A)
25
VGS = 7 V
VGS = 10 V
20
15
VGS = 5.5 V
10
VGS = 5 V
5
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS = 5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 6 V
3
VGS = 6 V
2
VGS = 7 V
1
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
0
5
10
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
SOURCE ON-RESISTANCE (m)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
25
30
80
ID = 7 A
VGS = 10 V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
ID = 7 A
60
40
TJ = 125 oC
20
TJ = 25 oC
0
4
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs. Junction Temperature
Figure 4. On-Resistance vs. Gate-to-Source Voltage
30
IS, REVERSE DRAIN CURRENT (A)
30
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
25
ID, DRAIN CURRENT (A)
20
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
2.0
-50
15
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
0.6
-75
VGS = 10 V
0
3.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.8
VGS = 5.5 V
VDS = 5 V
20
15
TJ = 150 oC
TJ = 25 oC
10
TJ = -55 oC
5
0
2
4
6
VGS = 0 V
10
TJ = 150 oC
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
© 2007 Fairchild Semiconductor Corporation
FDS86141 • Rev. C4
TJ = -55 oC
0.1
0.01
0.2
8
TJ = 25 oC
1
Figure 6.
3
Source-to-Drain Diode Forward Voltage
vs. Source Current
www.fairchildsemi.com
FDS86141 — N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
1000
ID = 7 A
VDD = 50 V
Ciss
8
VDD = 25 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
6
VDD = 75 V
4
Coss
100
Crss
2
f = 1 MHz
VGS = 0 V
10
0
0
3
6
9
12
5
0.1
15
Figure 7. Gate Charge Characteristics
100
8
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
10
Figure 8. Capacitance vs. Drain-to-Source Voltage
20
10
TJ = 25 oC
TJ = 100 oC
TJ = 125 oC
6
VGS = 10 V
4
VGS = 6 V
2
o
RJA = 50 C/W
1
0.01
0.1
1
10
0
25
50
tAV, TIME IN AVALANCHE (ms)
100us
1 ms
1
10 ms
SINGLE PULSE
TJ = MAX RATED
100 ms
RJA = 125 oC/W
1s
10 s
TA = 25 oC
0.1
125
150
500
10
0.01
0.01
100
Figure 10. Maximum Continuous Drain Current
vs. Ambient Temperature
THIS AREA IS
LIMITED BY rDS(on)
0.1
75
o
P(PK), PEAK TRANSIENT POWER (W)
100
50
TA, AMBIENT TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
ID, DRAIN CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
DC
1
10
100
600
VDS, DRAIN to SOURCE VOLTAGE (V)
10
SINGLE PULSE
RJA = 125 oC/W
1
0.5 -3
10
TA = 25 oC
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
© 2007 Fairchild Semiconductor Corporation
FDS86141 • Rev. C4
100
Figure 12. Single-Pulse Maximum Power Dissipation
4
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FDS86141 — N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
NORMALIZED THERMAL
IMPEDANCE, ZJA
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.001
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJA x RJA + TA
o
RJA = 125 C/W
0.0001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
© 2007 Fairchild Semiconductor Corporation
FDS86141 • Rev. C4
5
www.fairchildsemi.com
FDS86141 — N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
5.00
4.80
A
0.65
3.81
8
5
B
1.75
6.20
5.80
PIN ONE
INDICATOR
4.00
3.80
1
5.60
4
1.27
(0.33)
1.27
0.25
C B A
LAND PATTERN RECOMMENDATION
SEE DETAIL A
0.25
0.10
0.25
0.19
C
1.75 MAX
0.51
0.33
0.10 C
OPTION A - BEVEL EDGE
0.50 x 45°
0.25
R0.10
GAGE PLANE
R0.10
OPTION B - NO BEVEL EDGE
0.36
NOTES: UNLESS OTHERWISE SPECIFIED
8°
0°
0.90
0.40
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AA, ISSUE C,
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS.
D) LANDPATTERN STANDARD: SOIC127P600X175-8M.
E) DRAWING FILENAME: M08AREV13
SEATING PLANE
(1.04)
DETAIL A
SCALE: 2:1
Figure 1. 8-Lead, Small-Outline Integrated Circuit (SOIC), JEDEC MS-012, .150" Narrow Body
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specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
© 2007 Fairchild Semiconductor Corporation
FDS86141 • Rev. C4
6
www.fairchildsemi.com
FDS86141 — N-Channel PowerTrench® MOSFET
Physical Dimensions
FDS86141 — N-Channel PowerTrench® MOSFET
© 2007 Fairchild Semiconductor Corporation
FDS86141 • Rev. C4
7
www.fairchildsemi.com