FDS4897AC Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel MOSFETs are produced using Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state resistance Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A and yet maintain superior switching performance. Q2: P-Channel Max rDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A Applications Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A Inverter 100% UIL Tested Power Supplies RoHS Compliant D2 D2 D1 D1 Q2 4 G2 3 S2 7 2 G1 8 1 S1 D2 5 D2 6 D1 D1 Q1 G2 S2 G1 S1 Pin 1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Q1 40 VGS Gate to Source Voltage Drain Current - Continuous ID Parameter - Pulsed Q2 -40 Units V ±20 ±20 V 6.1 -5.2 24 -24 Power Dissipation for Dual Operation PD A 2.0 Power Dissipation for Single Operation EAS Single Pulse Avalanche Energy TJ, TSTG Operating and Storage Junction Temperature Range TA = 25 °C (Note 1a) 1.6 TA = 25 °C (Note 1b) 0.9 (Note 3) 37 W 73 -55 to +150 mJ °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case, RθJC Thermal Resistance, Junction to Ambient, (Note 1) 40 (Note 1a) 78 °C/W Package Marking and Ordering Information Device Marking FDS4897AC Device FDS4897AC ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev.C Package SO-8 Reel Size 13 ” 1 Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDS4897AC Dual N & P-Channel PowerTrench® MOSFET October 2008 Symbol Parameter Test Conditions Type Min 40 -40 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ID = -250 µA, VGS = 0 V Q1 Q2 ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C ID = -250 µA, referenced to 25 °C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V VDS = -32 V, VGS = 0 V Q1 Q2 1 -1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V Q1 Q2 ±100 ±100 nA nA 3.0 -3.0 V V 37 -32 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA VGS = VDS, ID = -250 µA Q1 Q2 ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C ID = -250 µA, referenced to 25 °C Q1 Q2 -6 6 VGS = 10 V, ID = 6.1 A VGS = 4.5 V, ID = 5.6 A VGS = 10 V, ID = 6.1 A, TJ = 125 °C Q1 20 24 30 26 31 39 VGS = -10 V, ID = -5.2 A VGS = -4.5 V, ID = -4.1 A VGS = -10 V, ID = -5.2 A, TJ = 125 °C Q2 28 45 41 39 65 57 VDD = 5 V, ID = 6.1 A VDD = -5 V, ID = -5.2 A Q1 Q2 24 14 Q1 VDS = 20 V, VGS = 0 V, f = 1 MHZ Q1 Q2 795 765 1055 1015 pF Q1 Q2 95 135 130 180 pF Q1 Q2 65 80 100 120 pF Q1 Q2 1.7 3.6 Q1 Q2 6 8 12 15 ns Q1 Q2 2 3 10 10 ns Q1 Q2 17 17 30 30 ns Q1 Q2 2 3 10 10 ns Q1 Q2 15 15 21 20 nC Q1 Q2 2.5 2.6 nC Q1 Q2 2.9 3.2 nC rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.5 -1.5 2.0 -2.0 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Q2 VDS = -20 V, VGS = 0 V, f = 1 MHZ Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev.C Q1 VDD = 20 V, ID = 6.1 A, VGS = 10 V, RGEN = 6 Ω Q2 VDD = -20 V, ID = -5.2 A, VGS = -10 V, RGEN = 6 Ω Q1 VGS = 10 V, VDD = 20 V, ID = 6.1 A Q2 VGS = -10 V, VDD = -20 V, ID = -5.2 A 2 www.fairchildsemi.com FDS4897AC Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Q1 Q2 0.75 -0.76 1.2 -1.2 V Q1 Q2 17 20 31 36 ns Q1 Q2 7 10 15 20 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A Q1 IF = 6.1 A, di/dt = 100 A/s Q2 IF = -5.2 A, di/dt = 100 A/s (Note 2) (Note 2) Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 135 °C/W when mounted on a minimun pad 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: Starting TJ = 25 °C, N-ch: L = 3 mH, IAS = 5 A, VDD = 40 V, VGS = 10 V; P-ch: L = 3 mH, IAS = -7 A, VDD = -40 V, VGS = -10 V. ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev.C 3 www.fairchildsemi.com FDS4897AC Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 24 5 VGS = 4.5 V 20 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 4 V 16 VGS = 3.5 V 12 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 8 4 VGS = 3 V 0 0.0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3 V 4 2 VGS = 4.5 V VGS = 4 V 1 VGS = 10 V 0.5 2.0 0 4 8 12 16 20 24 ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 80 ID = 6.1 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 3.5 V 3 Figure 1. On Region Characteristics PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 70 ID = 6.1 A 60 50 40 TJ = 125 oC 30 20 TJ = 25 oC 10 -50 -25 0 25 50 75 100 125 150 2 TJ, JUNCTION TEMPERATURE (oC) 24 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V 12 TJ = 150 oC 8 TJ = 25 oC TJ = -55 oC 4 0 2 3 10 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev.C 8 40 16 1 6 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 20 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDS4897AC Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted 2000 ID = 6.1 A 1000 8 VDD = 15 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 25 V VDD = 20 V 4 Ciss Coss 100 Crss 2 f = 1 MHz VGS = 0 V 0 0 4 8 12 10 0.1 16 1 Figure 7. Gate Charge Characteristics 40 Figure 8. Capacitance vs Drain to Source Voltage 7 10 9 8 7 6 5 6 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 4 3 TJ = 25 oC TJ = 125 oC 2 5 VGS = 10 V 4 VGS = 4.5 V 3 2 1 o RθJA = 78 C/W 1 0.01 0.1 1 10 0 25 20 50 125 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) 30 10 ID, DRAIN CURRENT (A) 100 o Figure 9. Unclamped Inductive Switching Capability 100 us 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 0.1 1s 10 s RθJA = 135 oC/W 0.01 0.01 75 TC, AMBIENT TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) DC TA = 25 oC 0.1 1 10 100 200 SINGLE PULSE RθJA = 135 oC/W 100 TA = 25 oC 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev.C VGS = 10 V Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDS4897AC Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA RθJA = 135 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev.C 6 www.fairchildsemi.com FDS4897AC Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted 5 VGS = -10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 24 VGS = -5 V 20 VGS = - 4 V VGS = -4.5 V 16 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 12 8 VGS = -3.5 V 4 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS = -3.5 V 4 VGS = -4 V 3 VGS = -4.5 V 2 VGS = -5 V 1 VGS = -10 V 0.5 3.0 0 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 15. On- Region Characteristics 20 24 120 ID = -5.2 A VGS = -10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 8 12 16 -ID, DRAIN CURRENT (A) Figure 16. Normalized on-Resistance vs Drain Current and Gate Voltage 1.8 ID = -5.2 A 80 60 TJ = 125 oC 40 TJ = 25 oC 20 -50 -25 0 25 50 75 2 100 125 150 -IS, REVERSE DRAIN CURRENT (A) VDS = -5 V 12 TJ = 150 oC 8 TJ = 25 oC TJ = -55 oC 0 1 2 3 4 10 VGS = 0 V 10 1 TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 19. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev.C 8 40 16 4 6 Figure 18. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 20 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 17. Normalized On-Resistance vs Junction Temperature 24 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 100 TJ, JUNCTION TEMPERATURE (oC) -ID, DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX Figure 20. Source to Drain Diode Forward Voltage vs Source Current 7 www.fairchildsemi.com FDS4897AC Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE (V) 10 2000 ID = -5.2 A Ciss 1000 8 CAPACITANCE (pF) VDD = -15 V 6 VDD = -20 V VDD = -25 V 4 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 0 0 4 8 12 10 0.1 16 1 6 10 9 8 7 6 5 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT (A) 40 Figure 22. Capacitance vs Drain to Source Voltage Figure 21. Gate Charge Characteristics 4 3 TJ = 25 oC 2 TJ = 125 oC 5 4 VGS = -10 V 3 VGS = -4.5 V 2 1 o RθJA = 78 C/W 1 0.1 1 10 0 25 40 50 100 125 150 o Figure 24. Maximum Continuous Drain Current vs Ambient Temperature Figure 23. Unclamped Inductive Switching Capability 1000 30 P(PK), PEAK TRANSIENT POWER (W) 100 us 10 1 ms 1 75 TC, AMBIENT TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) -ID, DRAIN CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) THIS AREA IS LIMITED BY rds(on) 10 ms 100 ms 0.1 0.01 0.01 0.1 SINGLE PULSE TJ = MAX RATED 1s RθJA = 135 oC/W 10 s TA = 25 oC DC 1 10 100 200 100 SINGLE PULSE o RθJA = 135 C/W 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 25. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev.C VGS = -10 V Figure 26. Single Pulse Maximum Power Dissipation 8 www.fairchildsemi.com FDS4897AC Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 135 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 27. Junction-to-Ambient Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev.C 9 www.fairchildsemi.com FDS4897AC Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ ™ TinyPower™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ SmartMax™ TinyWire™ SMART START™ µSerDes™ SPM® STEALTH™ SuperFET™ UHC® SuperSOT™-3 Ultra FRFET™ SuperSOT™-6 UniFET™ SuperSOT™-8 VCX™ SupreMOS™ VisualMax™ SyncFET™ XS™ ® The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev.C 10 www.fairchildsemi.com FDS4897AC Dual N & P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.