FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ Features General Description Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced ® using Fairchild Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench Extended VGSS range (-25V) for battery applications been especially tailored to minimize the on-state resistance. HBM ESD protection level of ±3.8KV typical (note 3) This device is well suited for Power Management and load High performance trench technology for extremely low rDS(on) switching applications common in Notebook Computers and High power and current handling capability Portable Battery Packs. process that has Termination is Lead-free and RoHS compliant D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S D G S S Pin 1 S SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID TA = 25°C (Note 1a) -Pulsed PD Ratings -30 Units V ±25 V -8.8 -50 Power Dissipation TA = 25°C (Note 1a) 2.5 Power Dissipation TA = 25°C (Note 1b) 1.0 EAS Single Pulse Avalanche Energy TJ, TSTG Operating and Storage Junction Temperature Range (Note 4) A W 24 mJ -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 25 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDS4435BZ Device FDS4435BZ ©2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C Package SO-8 1 Reel Size 13’’ Tape Width 12mm Quantity 2500units www.fairchildsemi.com FDS4435BZ P-Channel PowerTrench® MOSFET June 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient -30 V ID = -250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 µA -3 V -21 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C 6 VGS = -10V, ID = -8.8A 16 20 rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -6.7A 26 35 VGS = -10V, ID = -8.8A, TJ = 125°C 22 28 VDS = -5V, ID = -8.8A 24 gFS Forward Transconductance -1 -2.1 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -15V, VGS = 0V, f = 1MHz f = 1MHz 1385 1845 pF 275 365 pF 230 345 pF Ω 4.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to -10V Qg Total Gate Charge VGS = 0V to -5V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6Ω VDD = -15V, ID = -8.8A 10 20 ns 6 12 ns 30 48 ns 12 22 ns 28 40 nC 16 23 nC 5.2 nC 7.4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -8.8A (Note 2) IF = -8.8A, di/dt = 100A/µs -0.9 -1.2 V 29 44 ns 23 35 nC NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125°C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V ©2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C 2 www.fairchildsemi.com FDS4435BZ P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 4.0 50 40 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -10V VGS = -5V VGS = -4.5V 30 VGS = -4V 20 VGS = -3.5V 10 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 0 1 2 3 3.0 VGS = -4.5V 2.5 VGS = -4V 1.5 VGS = -10V 1.0 0.5 0 4 10 20 30 40 50 -ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 60 ID = -8.8A VGS = -10V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID = -8.8A 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -5V 2.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 50 40 TJ = 125oC 30 20 TJ = 25oC 10 100 125 150 2 TJ, JUNCTION TEMPERATURE ( C) o 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 50 100 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = -3.5V 3.5 40 VDS = -5V 30 20 TJ = 150oC 10 TJ = 25oC TJ =-55oC 0 1 2 3 4 1 0.1 TJ = 25oC TJ = 150oC 0.01 TJ = -55oC 0.001 0.0001 0.0 5 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics ©2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C VGS = 0V 10 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS4435BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 4000 ID = -8.8A Ciss 8 CAPACITANCE (pF) VDD = -10V 6 VDD = -15V VDD = -20V 4 2 1000 Coss Crss f = 1MHz VGS = 0V 0 0 5 10 15 20 25 100 0.1 30 1 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage -4 10 -Ig, GATE LEAKAGE CURRENT(A) -IAS, AVALANCHE CURRENT(A) 20 10 TJ = 25oC TJ = 125oC VDS = 0V -5 10 TJ = 125oC -6 10 -7 10 TJ = 25oC -8 10 -9 1 0.01 0.1 1 10 10 30 0 5 10 15 20 25 30 -VGS, GATE TO SOURCE VOLTAGE(V) tAV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Gate Leakage Current vs Gate to Source Voltage 100 10 8 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 30 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -10V 6 VGS = -4.5V 4 2 100us 10 1ms 10ms 1 THIS AREA IS LIMITED BY rDS(on) 0.1 100ms SINGLE PULSE TJ = MAX RATED 1s 10s DC o RθJA = 125 C/W o TA = 25oC RθJA = 50 C/W 0.01 0.1 0 25 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ( C) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature ©2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C 1 10 80 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Forward Bias Safe Operating Area 4 www.fairchildsemi.com FDS4435BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDS4435BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 100 P(PK), PEAK TRANSIENT POWER (W) VGS = -10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 – T A -----------------------125 I = I25 10 1 TA = 25oC SINGLE PULSE RθJA = 125oC/W 0.6 -3 10 -2 -1 10 0 10 1 10 2 10 3 10 10 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE RθJA = 125oC/W 0.01 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 14. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C 5 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com