PowerTrench® Power Clip 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 9.6 mΩ at VGS = 4.5 V, ID = 10 A dual package. The switch node has been internally connected to Q2: N-Channel enable easy placement and routing of synchronous buck Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 22 A converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power Low inductance packaging shortens rise/fall times, resulting in lower switching losses efficiency. MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing Applications RoHS Compliant Communications Computing General Purpose Point of Load Pin 1 V+ Pin 1 LS GND GND GND (LSS V+ (HSD SW HSG SW SW HSG PAD9 V+(HSD) V+ LSG SW SW SW PAD10 GND(LSS) SW Top 3.3 mm x 3.3 mm V+ HSG LSG SW GND SW GND GND GND SW Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID TJ, TSTG Units V V (Note 4) ±20 ±20 TC = 25 °C 20 55 -Continuous TA = 25 °C 131a 261b 40 100 Single Pulse Avalanche Energy PD Q2 30 -Continuous (Package limited) -Pulsed EAS Q1 30 21 97 Power Dissipation for Single Operation TA = 25 °C (Note 3) 1.61a 2.01b Power Dissipation for Single Operation TA = 25 °C 0.81c 0.91d Operating and Storage Junction Temperature Range A mJ -55 to +150 W °C Thermal Characteristics Thermal Resistance, Junction to Ambient 771a RθJA Thermal Resistance, Junction to Ambient 1c RθJC Thermal Resistance, Junction to Case RθJA 151 5.0 631b 1351d °C/W 3.5 Package Marking and Ordering Information Device Marking 13CF/15CF Device FDPC8013S ©2012 Fairchild Semiconductor Corporation FDPC8013S Rev.C1 Package Power Clip 33 1 Reel Size 13 ” Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDPC8013S PowerTrench® Power Clip April 2012 FDPC8013S Symbol Parameter Test Conditions Type Min 30 30 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ID = 1 mA, VGS = 0 V Q1 Q2 ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C ID = 10 mA, referenced to 25 °C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V Q1 Q2 1 500 μA μA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS= 0 V VGS = 20 V, VDS= 0 V Q1 Q2 100 100 nA nA 3.0 3.0 V V 16 20 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA VGS = VDS, ID = 1 mA Q1 Q2 ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C ID = 10 mA, referenced to 25 °C Q1 Q2 -5 -6 VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 13 A,TJ =125 °C Q1 4.6 6.7 6.6 6.4 9.6 9.2 VGS = 10 V, ID = 26 A VGS = 4.5 V, ID = 22 A VGS = 10 V, ID = 26 A ,TJ =125 °C Q2 1.4 2.0 1.9 1.9 2.7 2.6 VDS = 5 V, ID = 13 A VDS = 5 V, ID = 26 A Q1 Q2 53 168 S Q1: VDS = 15 V, VGS = 0 V, f = 1 MHZ Q1 Q2 827 2785 pF Q1 Q2 333 997 pF Q1 Q2 44 128 pF Q1 Q2 0.5 0.5 Ω rDS(on) gFS Drain to Source On Resistance Forward Transconductance 1.2 1.2 1.5 1.7 mV/°C mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Q2: VDS = 15 V, VGS = 0 V, f = 1 MHZ Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ©2012 Fairchild Semiconductor Corporation FDPC8013S Rev.C1 Q1: VDD = 15 V, ID = 13 A, RGEN = 6 Ω Q2: VDD = 15 V, ID = 26 A, RGEN = 6 Ω VGS = 0 V to 10 V Q1 VDD = 15 V, VGS = 0 V to 4.5 V ID = 13 A Q2 VDD = 15 V, ID = 26 A 2 Q1 Q2 6 11 ns Q1 Q2 2 5 ns Q1 Q2 16 30 ns Q1 Q2 2 4 ns Q1 Q2 13 44 nC Q1 Q2 6 21 nC Q1 Q2 2.2 7.2 nC Q1 Q2 1.9 6.6 nC www.fairchildsemi.com FDPC8013S PowerTrench® Power Clip Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Q1 Q2 0.80 0.77 1.2 1.2 V Q1 Q2 22 29 ns Q1 Q2 7 30 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 13 A VGS = 0 V, IS = 26 A (Note 2) (Note 2) Q1 IF = 13 A, di/dt = 100 A/μs Q2 IF = 26 A, di/dt = 300 A/μs Notes: 1.RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 63 °C/W when mounted on a 1 in2 pad of 2 oz copper a. 77 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G d. 135 °C/W when mounted on a minimum pad of 2 oz copper c. 151 °C/W when mounted on a minimum pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Q1 :EAS of 21 mJ is based on starting TJ = 25 oC; N-ch: L = 1.2 mH, IAS = 6 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 14.5 A. Q2: EAS of 97 mJ is based on starting TJ = 25 oC; N-ch: L = 0.6 mH, IAS = 18 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 32.9 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurence only. No continuous rating is implied. ©2012 Fairchild Semiconductor Corporation FDPC8013S Rev.C1 3 www.fairchildsemi.com FDPC8013S PowerTrench® Power Clip Electrical Characteristics TJ = 25 °C unless otherwise noted 40 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V ID, DRAIN CURRENT (A) VGS = 6 V VGS = 4.5 V 30 VGS = 3.5 V 20 VGS = 3 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.3 0.6 0.9 1.2 1.5 VGS = 3 V 3.0 VGS = 3.5 V 2.5 2.0 VGS = 4.5 V 1.5 1.0 VGS = 6 V 0.5 0 10 20 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 30 40 35 ID = 13 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 -50 40 21 14 TJ = 125 oC 7 TJ = 25 oC IS, REVERSE DRAIN CURRENT (A) TJ = 25 TJ = 150 oC oC TJ = -55 oC 2.5 3.0 5 6 7 8 9 10 VGS = 0 V 10 1 TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDPC8013S Rev.C1 4 40 10 2.0 3 Figure 4. On-Resistance vs Gate to Source Voltage 20 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) VDS = 5 V 0 1.0 28 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 30 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 13 A 0 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3.5 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDPC8013S PowerTrench® Power Clip Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted 2000 ID = 13 A Ciss 1000 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 20 V VDD = 10 V 4 VDD = 15 V 2 Coss 100 Crss f = 1 MHz VGS = 0 V 10 0.1 0 0 3 6 9 12 15 1 Figure 7. Gate Charge Characteristics 60 10 TJ = TJ = 125 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 50 25 oC TJ = 100 oC oC VGS = 10 V 50 40 30 VGS = 4.5 V 20 10 Limited by Package o RθJC = 5.0 C/W 1 0.001 0.01 0.1 1 10 0 25 50 50 125 150 Figure 10. Maximum Continuous Drain Current vs. Ambient Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) 100 100 μs 10 0.1 100 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 1 75 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED 1 ms 10 ms 100 ms 1s RθJA = 151 oC/W 10s TA = 25 oC DC 0.01 0.01 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) o RθJA = 151 C/W 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 0 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDPC8013S Rev.C1 SINGLE PULSE Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDPC8013S PowerTrench® Power Clip Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.01 o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA RθJA = 151 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDPC8013S Rev.C1 6 www.fairchildsemi.com FDPC8013S PowerTrench® Power Clip Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted 25 oC unlenss otherwise noted 100 6 VGS = 6 V 80 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 4.5 V VGS = 3.5 V 60 40 VGS = 3 V 20 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.2 0.4 0.6 0.8 5 4 3 VGS = 3.5 V VGS = 4.5 V 2 1 VGS = 6 V 0 1.0 0 20 Figure 14. On-Region Characteristics 60 80 100 Figure 15. Normalized on-Resistance vs Drain Current and Gate Voltage 7 ID = 26 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 VGS = 10 V ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 5 ID = 26 A 4 3 1 TJ = 25 oC 0 -50 -25 0 25 50 75 TJ = 125 oC 2 100 125 150 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 17. On-Resistance vs Gate to Source Voltage Figure 16. Normalized On-Resistance vs Junction Temperature 100 100 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 80 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3 V VDS = 5 V 60 TJ = 125 oC 40 TJ = 25 oC 20 TJ = -55 0 1.0 1.5 2.0 2.5 oC 3.0 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 19. Source to Drain Diode Forward Voltage vs Source Current Figure 18. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDPC8013S Rev.C1 VGS = 0 V 7 www.fairchildsemi.com FDPC8013S PowerTrench® Power Clip Typical Characteristics (Q2 N-Channel) TJ = 25 oC unlenss otherwise noted 10000 VGS, GATE TO SOURCE VOLTAGE (V) 10 ID = 26 A Ciss CAPACITANCE (pF) 8 6 VDD = 10 V VDD = 15 V 4 VDD = 20 V Coss 1000 Crss 2 f = 1 MHz VGS = 0 V 100 50 0.1 0 0 10 20 30 40 50 1 120 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 TJ = 25 oC TJ = 100 oC 10 TJ = 125 oC 100 VGS = 10 V 80 VGS = 4.5 V 60 40 Limited by Package o RθJC = 3.5 C/W 20 1 0.001 0.01 0.1 1 10 100 0 25 1000 50 100 125 150 o Figure 23. Maximum Continouns Drain Current vs Ambient Temperature Figure 22. Unclamped Inductive Switching Capability 3000 P(PK), PEAK TRANSIENT POWER (W) 200 100 100 μs ID, DRAIN CURRENT (A) 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 10 0.1 30 Figure 21. Capacitance vs Drain to Source Voltage Figure 20. Gate Charge Characteristics 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms 100 ms 1s 10s DC SINGLE PULSE TJ = MAX RATED RθJA = 135 oC/W TA = 25 oC 0.01 0.01 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) o RθJA = 135 C/W 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 25. Single Pulse Maximum Power Dissipation Figure 24. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDPC8013S Rev.C1 SINGLE PULSE 1000 8 www.fairchildsemi.com FDPC8013S PowerTrench® Power Clip Typical Characteristics (Q2 N-Channel) TJ = NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 TJ = 25 oC unlenss otherwise noted DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE t2 o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA RθJA = 135 C/W 1E-3 (Note 1b) 1E-4 -4 10 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 26. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDPC8013S Rev.C1 9 www.fairchildsemi.com FDPC8013S PowerTrench® Power Clip Typical Characteristics (Q2 N-Channel) SyncFETTM Schottky body diode Characteristics Fairchild’s SyncFETTM process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 27 shows the reverse recovery characteristic of the FDPC8013S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 4 IDSS, REVERSE LEAKAGE CURRENT (uA) 30 25 CURRENT (A) 20 15 di/dt = 300 A/μs 10 5 0 -5 100 150 200 250 300 350 400 TJ = 125 oC 3 10 TJ = 100 oC 2 10 10 TJ = 25 oC 1 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TIME (ns) Figure 28. SyncFETTM body diode reverse leakage versus drain-source voltage Figure 27. FDPC8013S SyncFETTM body diode reverse recovery characteristic ©2012 Fairchild Semiconductor Corporation FDPC8013S Rev.C1 10 10 www.fairchildsemi.com FDPC8013S PowerTrench® Power Clip Typical Characteristics (continued) FDPC8013S PowerTrench® Power Clip Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDPC8013S Rev.C1 11 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDPC8013S Rev.C1 12 www.fairchildsemi.com FDPC8013S PowerTrench® Power Clip TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ F-PFS™ PowerTrench® The Power Franchise® ® PowerXS™ AccuPower™ FRFET® Global Power ResourceSM Programmable Active Droop™ AX-CAP™* Green Bridge™ QFET® BitSiC® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™