BR1000 - BR1010 SILICON BRIDGE RECTIFIERS BR10 PRV : 50 - 1000 Volts Io : 10 Amperes 0.520 (13.20) 0.480 (12.20) 0.158 (4.00) 0.142 (3.60) AC FEATURES : * * * * * * 0.77 (19.56) 0.73 (18.54) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board 0.290 (7.36) 0.210 (5.33) AC 0.052 (1.32) 0.048 (1.22) * Pb / RoHS Free 0.75 (19.1) Min. MECHANICAL DATA : 0.30 (7.62) 0.25 (6.35) * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 6.1 grams Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL BR1000 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc=55°C IF(AV) 10 A IFSM 300 A Current Squared Time at t < 8.3 ms. I 2t 160 A2S Maximum Forward Voltage per Diode at IF = 5 A VF 1.0 V Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA RθJC 2.5 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : 1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate. Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( BR1000 - BR1010 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERES 12 10 8 6 4 HEAT-SINK MOUNTING, Tc 3.2" x 3.2" x 0.12" THK. (8.2cm x8.2cm x 0.3cm ) Al.-PLATE 2 250 T J = 50 °C 200 150 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 50 0 0 0 25 50 75 100 125 150 175 1 CASE TEMPERATURE, ( °C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS 4 6 10 20 40 60 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES PER DIODE 100 FORWARD CURRENT, AMPERES 2 NUMBER OF CYCLES AT 60Hz Pulse W idth = 300 µs 1 % Duty Cycle 10 1.0 T J = 25 °C 0.1 PER DIODE 10 T J = 100 °C 1.0 T J = 25 °C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005