MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF21090R3 MRF21090SR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc... N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W - CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH: Output Power — 11.5 Watts Efficiency — 16% Gain — 12.2 dB ACPR — - 45 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 90 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2170 MHz, 90 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF21090R3 CASE 465C - 02, STYLE 1 NI - 880S MRF21090SR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 65 Vdc Gate - Source Voltage VGS +15, - 0.5 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 270 1.54 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.65 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MRF21090R3 MRF21090SR3 1 Freescale Semiconductor, Inc. ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model MRF21090R3 MRF21090SR3 2 (Minimum) 1 (Minimum) Machine Model MRF21090R3 MRF21090SR3 M3 (Minimum) M4 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs — 7.2 — S Gate Threshold Voltage (VDS = 10 V, ID = 300 µA) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 750 mA) VGS(Q) 3 3.8 5 Vdc Drain - Source On - Voltage (VGS = 10 V, ID = 1 A) VDS(on) — 0.1 0.6 Vdc Crss — 4.2 — pF Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Gps 10 11.7 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) η 30 33 — % Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IMD — - 30 - 27.5 dBc Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IRL — - 12 - 9.0 dB Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz) Gps — 11.7 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz) η — 41 — % Output Mismatch Stress (VDD = 28 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ OFF CHARACTERISTICS Freescale Semiconductor, Inc... Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF21090R3 MRF21090SR3 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. R2 V DD B1 R1 VGG + Z11 + C2 C1 C3 + C7 + C10 C9 C8 + C11 C13 C4 RF OUTPUT Z10 RF INPUT Z6 C6 Z1 Z2 Z3 Z4 Freescale Semiconductor, Inc... C3, C9 C4, C8 C5, C12 C6 C7 C11 C14 R1 R2 Z1 Z2 Z3 Z4 Z5 Z6 C14 Z8 Z9 C12 Z5 DUT C5 B1 C1, C13 C2, C10 Z7 Ferrite Bead, Fair Rite #2743019447 470 µF, 50 V Electrolytic Capacitors 22 µF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 20 nF Chip Capacitors, ATC #100B203MCA500X 5.1 pF Chip Capacitors, ATC #100B5R1CCA500X 0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim 10 pF Chip Capacitor, ATC #100B100JCA500X 1 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet 1 nF Chip Capacitor, ATC #100B102JCA500X 8.2 pF Chip Capacitor, ATC #100B8R2CCA500X 13 Ω, 1/4 W Chip Resistor, Garret Instrument #RM73B2B130JT, 12 Ω, 1/4 W Chip Resistor, Garret Instrument #RM73B2B120JT 30.7 x 2.09 mm Microstrip 5.99 x 2.09 mm Microstrip 7.55 x 9.89 mm Microstrip 3.77 x 15.71 mm Microstrip 6.89 x 26.17 mm Microstrip 14.93 x 32.05 mm Microstrip Z7 Z8 Z9 Z10 Z11 WS1, WS2 10.23 x 2.09 mm Microstrip 6.03 x 2.09 mm Microstrip 23.98 x 2.09 mm Microstrip 29.82 x 1.15 mm Microstrip 17.08 x 1.15 mm Microstrip Beryllium Copper Wear Blocks 5 mils Thick Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type N Jack Connectors, 3052 - 1648 - 10, Omni Specra 4 - 40 Head Screws 0.125″ Long 4 - 40 Head Screws 0.188″ Long 4 - 40 Head Screws 0.312″ Long 4 - 40 Head Screws 0.438″ Long Endplates Brass Endplates for Copper Bedstead Bedstead Copper Bedstead/Heatsink Insert Copper Bedstead Insert Raw PCB 0.030″ Glass Teflon, 2 oz Copper Clad 3″ x 5″ Arion RF Circuit 3″ x 5″ Copper Clad PCB Teflon, MRF21090, CMR Figure 1. MRF21090R3(SR3) Test Circuit Schematic C7 C8 Gate Bias Feed C2 C6 C5 Drain Bias Feed R2 R1 C9 C3 C4 C1 B1 C U T O U T C11 C10 C13 C14 C12 MRF21090 Figure 2. MRF21090R3(SR3) Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21090R3 MRF21090SR3 3 Freescale Semiconductor, Inc. −10 40 −15 η VDD = 28 Vdc Pout = 90 W (PEP) IDQ = 750 mA Two−Tone Measurement 100 kHz Tone Spacing 30 20 Gps −20 −25 −30 IMD 0 −35 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 2200 25 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) 500 mA 2000 mA 1500 mA −40 −45 800 mA −50 1000 mA −55 1 10 Pout, OUTPUT POWER (WATTS) PEP −40 ACPR 15 10 5 −60 η −70 0 5.0 10 15 Pout, OUTPUT POWER (WATTS) AVG. 20 100 −20 VDD = 28 Vdc IDQ = 750 mA f = 2140 MHz Two−Tone Measurement 100 kHz Tone Spacing −30 −40 3rd Order 5th Order −50 7th Order −60 −70 −80 Figure 5. Intermodulation Distortion versus Output Power 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 6. Intermodulation Distortion Products versus Output Power 11.8 15 2000 mA VDD = 28 Vdc f = 2140 MHz Two−Tone Measurement 100 kHz Tone Spacing 1500 mA 13 1000 mA 12 800 mA 11 −22 11.6 G ps, POWER GAIN (dB) 14 −24 Pout = 90 W (PEP) IDQ = 750 mA f = 2140 MHz Two−Tone Measurement 100 kHz Tone Spacing Fixture Tuned for 28 Volts 11.4 11.2 Gps 11.0 10.8 1 −28 −32 IMD 10 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain versus Output Power MRF21090R3 MRF21090SR3 4 −26 −30 500 mA 10 −50 Gps Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power −25 VDD = 28 Vdc f = 2140 MHz −30 Two−Tone Measurement 100 kHz Tone Spacing −35 −30 20 Figure 3. Class AB Broadband Circuit Performance G ps, POWER GAIN (dB) Freescale Semiconductor, Inc... 10 −20 VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz Channel Spacing (Channel Bandwidth): 4.096 MHz (5 MHz) 100 10.6 20 22 24 26 28 30 VDS, DRAIN VOLTAGE (VOLTS) 32 34 IMD, INTERMODULATION DISTORTION (dBc) IRL 50 30 ADJACENT CHANNEL POWER RATIO (dB) −5 η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) 60 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) TYPICAL PERFORMANCE (IN MOTOROLA TEST FIXTURE) −34 Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Zo = 5 Ω f = 2170 MHz 2110 MHz Freescale Semiconductor, Inc... Zload Zsource f = 2110 MHz 2170 MHz VDD = 28 V, IDQ = 750 mA, Pout = 90 W (PEP) f MHz Zsource Ω Zload Ω 2110 3.03 - j3.40 0.92 - j1.67 2140 3.02 - j3.46 0.97 - j1.80 2170 2.60 - j3.50 0.90 - j1.52 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21090R3 MRF21090SR3 5 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF21090R3 MRF21090SR3 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G 4 2X 1 Q bbb M T A M B M B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. 3 K 2 bbb M D T A B M M R M bbb M T A B M Freescale Semiconductor, Inc... M T A B M M T A B M S M N ccc ccc (INSULATOR) aaa (LID) M T A B M (LID) M (INSULATOR) M M H F C E T A A (FLANGE) SEATING PLANE CASE 465B - 03 ISSUE C NI - 880 MRF21090R3 B DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 B (FLANGE) K 2 bbb M D T A M B M M bbb M T A M B ccc M N ccc M T A M B R (INSULATOR) M T A M B M S (LID) aaa M T A M B (LID) M (INSULATOR) M H C F E T A A (FLANGE) MOTOROLA RF DEVICE DATA DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE CASE 465C - 02 ISSUE A NI - 880S MRF21090SR3 For More Information On This Product, Go to: www.freescale.com MRF21090R3 MRF21090SR3 7 Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. 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E Motorola Inc. 2004 HOW TO REACH US: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF21090R3 MRF21090SR3 8 ◊ MOTOROLA RF DEVICE MRF21090/D DATA For More Information On This Product, Go to: www.freescale.com