FAIRCHILD L14C1

HERMETIC SILICON PHOTOTRANSISTOR
L14C1
L14C2
PACKAGE DIMENSIONS
0.230 (5.84)
0.209 (5.31)
0.195 (4.96)
0.178 (4.52)
0.030 (0.76)
MAX
0.210 (5.34)
MAX
0.500 (12.7)
MIN
0.100 (2.54)
SCHEMATIC
0.050 (1.27)
0.100 (2.54) DIA.
(CONNECTED TO CASE)
COLLECTOR
3
2
1
3
0.038 (.97) NOM
0.046 (1.16)
0.036 (0.92)
Ø0.021 (0.53) 3X
BASE 2
45°
NOTES:
1
EMITTER
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The L14C1/L14C2 are silicon phototransistors mounted in a wide angle, TO-18 package.
FEATURES
• Hermetically sealed package
• Wide reception angle
 2001 Fairchild Semiconductor Corporation
DS300305
6/01/01
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HERMETIC SILICON PHOTOTRANSISTOR
L14C1
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Collector to Emitter Breakdown Voltage
Collector to Base Breakdown Voltage
Emitter to Base Breakdwon Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
L14C2
(TA = 25°C unless otherwise specified)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCEO
VCBO
VEBO
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
50
50
7
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm2 is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
Collector-Emitter Breakdown
Emitter-Base Breakdown
Collector-Base Breakdown
Collector-Emitter Leakage
Reception Angle at 1/2 Sensitivity
On-State Collector Current L14C1
On-State Collector Current L14C2
On-State Collector Current L14C2
Turn-On Time
Turn-Off Time
Saturation Voltage
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(TA =25°C) (All measurements made under pulse conditions)
TEST CONDITIONS
SYMBOL
MIN
IC = 10 mA, Ee = 0
IE = 100 µA, Ee = 0
IC = 100 µA, Ee = 0
VCE = 20 V, Ee = 0
BVCEO
BVEBO
BVCBO
ICEO
θ
IC(ON)
IC(ON)
IC(ON)
ton
toff
VCE(SAT)
50
7.0
50
—
Ee = 0.5 mW/cm2, VCE = 5 V(7,8)
Ee = 0.5 mW/cm2, VCE = 5 V(7,8)
Ee = 1.0 mW/cm2, VCE = 5 V(7,8)
IC = 2 mA, VCC = 10 V, RL =100 Ω
IC = 2 mA, VCC = 10 V, RL =100 Ω
IC = 0.40 mA, Ee = 6.0 mW/cm2(7,8)
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TYP
MAX
UNITS
—
—
—
100
0.40
V
V
V
nA
Degrees
mA
mA
mA
µs
µs
V
6/01/01
DS300305
±40
.16
.08
.16
—
—
—
5
5
—
HERMETIC SILICON PHOTOTRANSISTOR
L14C1
Figure 1. Light Current vs. Collector to Emitter Voltage
Figure 2. Normalized Light Current vs. Radiation
10
Ee = 20 mW/cm2
IL, NORMALIZED LIGHT CURRENT
II, NORMALIZED LIGHT CURRENT
10
Ee = 10 mW/cm2
1.0
Ee = 5 mW/cm2
Ee = 2 mW/cm2
0.1
.01
0.1
NORMALIZED TO:
VCE = 5 V
Ee = 10 mW/cm2
10
1.0
1.0
NORMALIZED TO:
VCE = 5 V
Ee = 10 mW/cm2
0.1
.01
.01
100
1.0
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
ton and toff, NORMALIZED TURN ON AND TURN OFF TIMES
Figure 3. Dark Current vs. Temperature
ID, DARK CURRENT (µA)
100
10
1.0
0.1
VCE = 20 V
Ee = 0 mW/cm2
.01
0
25
50
75
100
125
150
Figure 4. Switching Speed vs. Output Current
RL = 1KΩ
1.0
NORMALIZED TO:
VCE = 10 V
I C = 2 mA
ton = toff = 5 µsec
.01
1
RL = 10Ω
1.0
10
100
IC, OUTPUT CURRENT (mA)
Figure 5. Spectral Response
Figure 6. Angular Response Curve
130
0.9
120
0.8
110
100
0.7
90
RELATIVE OUTPUT (%)
RELATIVE RESPONSE
RL = 100Ω
R L = 100 Ω
1.0
0.6
0.5
0.4
0.3
0.2
80
70
60
50
40
30
20
10
0.1
500
600
700
800
900
1000
-60
1100
6/01/01
-40
-20
0
20
40
60
θ, ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
λ, WAVE LENGTH (NANOMETERS)
DS300305
100
10
T, TEMPERATURE (°C)
0
10
Ee - TOTAL IRRADIANCE IN mW/cm2
1000
.001
L14C2
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HERMETIC SILICON PHOTOTRANSISTOR
L14C1
L14C2
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
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2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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