SD101AW TH R U SD101CW FEATURES SMALL SIGNAL CHOTTKY DIODES SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R SOD-123 For general purpose applications The SD10AW to SD101CW series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level ( applications These diodes are also available in the Mini-MELF case with type ( JF designation LL101A to LL101C ,in the DO-35 case with type designation SD101A to SD101C and in the SOD-323 case with type designation SD103AWS to SW103CWS MECHANICAL DATA Case: SOD-123 plastic case Weight: Approx. 0.01 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Value Symbols Peak Reverse Voltage VRRM VRRM VRRM Ptot IFSM TJ TSTG SD101AW SD101BW SD101CW Porwer Dissipation (infinite Heat Sink) Maximum Single cycle surge 10ms square wave Junction temperature Storage Temperature Range Units 60 50 40 2.0 V V mW A 125 C 400 1) -55 to+150 C 1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Symbols Reverse breakover voltage at IR=10mA Leakage current at VR=50V VR=40V VR=30V Forward voltage drop at IF=1mA IF=15mA Junction Capacitance at VR=0V ,f=1MHz SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW VR VR VR IR IR IR SD101AW SD101BQ SD101CW SD101AW SD101BW SD101CW VF VF VF VF VF VF SD101AW SD101BW SD101CW CJ CJ CJ Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR Thermal resistance,junction to Ambient Min. Typ. Max. Unis V V V 60 50 40 trr 200 200 200 0.41 0.4 0.39 1 0.95 0.9 2.0 2.1 2.2 1 pF pF pF ns RqJA 300 1) K/W nA nA nA V V V V V V 1) Valid provided that electrodes are kept at ambient temperature 2-110 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM