FAIRCHILD FDFMA2P853_08

FDFMA2P853
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
General Description
Features
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance and an independently
connected low forward voltage schottky diode for minimum
conduction losses.
MOSFET:
The MicroFET 2x2 package offers exceptional thermal
perfo
rmance for it's physica
l size and is well suited to linear
mode applications.
Schottky:
„ -3.0 A, -20V. RDS(ON) = 120 m: @ VGS = -4.5 V
RDS(ON) = 160 m: @ VGS = -2.5 V
RDS(ON) = 240 m: @ VGS = -1.8 V
VF < 0.46 V @ 500 mA
„ Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
„ RoHS Compliant
A
NC D
C
MicroFET
C
D
G
A
1
6
C
NC
2
5
G
D
3
4
S
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
Parameter
MOSFET Drain-Source Voltage
VGSS
MOSFET Gate-Source Voltage
ID
Drain Current -Continuous
-Pulsed
(Note 1a)
Ratings
-20
Units
V
r8
V
-3.0
A
-6
VRRM
Schottky Repetitive Peak Reverse voltage
IO
Schottky Average Forward Current
(Note 1a)
1
PD
Power dissipation for Single Operation
Power dissipation for Single Operation
(Note 1a)
(Note 1b)
1.4
TJ, TSTG
Operating and Storage Junction Temperature Range
V
30
A
W
0.7
o
-55 to +150
C
Thermal Characteristics
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
86
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
173
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
86
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1d)
140
o
C/W
Package Marking and Ordering Information
Device Marking
.853
Device
FDFMA2P853
©2008 Fairchild Semiconductor Corporation
Reel Size
7inch
1
Tape Width
8mm
Quantity
3000 units
FDFMA2P853 Rev. D2 (W)
FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
September 2008
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = –250 PA
VGS = 0 V,
ID = –250 PA, Referenced to 25qC
–20
V
'BVDSS
'TJ
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
PA
IGSS
Gate–Body Leakage
VGS = ± 8 V,
VDS = 0 V
±100
nA
On Characteristics
mV/qC
–12
(Note 2)
–0.4
–0.7
–1.3
V
VGS(th)
'VGS(th)
'TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 PA
VDS = VGS,
ID = –250 PA, Referenced to 25qC
ID(on)
On–State Drain Current
VGS = –4.5 V, VDS = –5 V
gFS
Forward Transconductance
VDS = –5 V,
ID = –3.0 A
7
S
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
435
pF
80
pF
45
pF
mV/qC
2
VGS = –4.5 V, ID = –3.0 A
VGS = –2.5 V, ID = –2.5 A
VGS = –1.8 V, ID = –1.0 A
VGS= –4.5 V, ID = –3.0 A, TJ=125qC
120
160
240
160
90
120
172
118
–20
m:
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
(Note 2)
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 :
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
15
27
ns
tf
Turn–Off Fall Time
6
12
ns
4
6
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –10 V,
VGS = –4.5 V
ID = –3.0 A,
9
18
ns
11
19
ns
nC
0.8
nC
0.9
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = –1.1 A
(Note 2)
IF = –3.0 A,
dIF/dt = 100 A/µs
–0.8
–1.1
A
–1.2
V
17
ns
6
nC
Schottky Diode Characteristics
IR
Reverse Leakage
VR = 5 V
TJ = 25qC
TJ = 125qC
9.9
2.3
50
10
PA
mA
IR
Reverse Leakage
VR = 20 V
TJ = 25qC
TJ = 85qC
TJ = 125qC
9.9
0.3
2.3
100
1
10
PA
mA
mA
VF
Forward Voltage
IF = 500mA
TJ = 25qC
TJ = 125qC
0.4
0.3
0.46
0.35
V
VF
Forward Voltage
IF = 1A
TJ = 25qC
TJ = 125qC
0.5
0.49
0.55
0.54
V
2
FDFMA2P853 Rev D2 (W)
FDFMA2P853 Integrated P-Channel PowerTrench“ MOSFET and Schottky Diode
Electrical Characteristics TA = 25°C unless otherwise noted
Notes:
1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by
design while RTJA is determined by the user's board design.
(a) MOSFET RTJA = 86°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
(b) MOSFET RTJA = 173°C/W when mounted on a minimum pad of 2 oz copper
(c) Schottky RTJA = 86°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
(d) Schottky RTJA = 140°C/W when mounted on a minimum pad of 2 oz copper
a) 86oC/W
when
mounted
on a 1in2
pad of 2 oz
copper
b) 173oC/W
when
mounted on
a minimum
pad of
2 oz copper
c) 86oC/W
when
mounted
on a 1in2
pad of 2 oz
copper
d) 140oC/W
when
mounted on
a minimum
pad of
2 oz copper
Scale 1: 1 on letter size paper
2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%
3
FDFMA2P853 Rev. D2 (W)
FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Electrical Characteristics TA = 25°C unless otherwise noted
3
6
-2.5V
VGS = -1.5V
-2.0V
5
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -4.5V
-3.5V
-3.0V
4
-1.8V
3
2
-1.5V
1
2.2
1.8
-1.8V
-2.0V
1.4
-2.5V
-3.0V
0
0.5
1
1.5
2
-VDS, DRAIN-SOURCE VOLTAGE (V)
0
2.5
Figure 1. On-Region Characteristics
-4.5V
1
2
3
4
-ID, DRAIN CURRENT (A)
5
6
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.28
1.4
RDS(ON), ON-RESISTANCE (OHM)
ID = -3.0A
VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
-50
ID = -1.5A
0.22
0.16
TA = 125oC
0.1
TA = 25oC
0.04
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (oC)
125
150
0
Figure 3. On-Resistance Variation with
Temperature
2
4
6
8
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
6
10
VDS = -5V
-IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
5
-ID, DRAIN CURRENT (A)
-3.5V
1
0.6
0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.6
4
3
TA = 125oC
2
o
-55 C
1
25oC
0
0
0.5
1
1.5
2
1
0.1
o
TA = 125 C
0.01
25oC
-55oC
0.001
0.0001
2.5
0
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
0.2
0.4
0.6
0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
4
FDFMA2P853 Rev. D2 (W)
FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics
700
ID = -3.0A
VDS = -5V
-15V
3
-10V
2
500
400
Ciss
300
200
Coss
1
100
Crss
0
0
0
1
2
3
Qg, GATE CHARGE (nC)
4
5
0
Figure 7. Gate Charge Characteristics
4
8
12
16
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics
0.01
1
IR, REVERSE LEAKAGE CURRENT (A)
10
IF, FORWARD LEAKAGE CURRENT(A)
f = 1MHz
VGS = 0 V
600
4
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
5
TJ = 125oC
0.1
o
TJ = 25 C
0.01
0.001
TJ = 125oC
0.001
TJ = 85oC
0.0001
0.00001
TJ = 25oC
0.000001
0
0.1
0.2
0.3
0.4
0.5
0.6
VF, FORWARD VOLTAGE (V)
0.7
0.8
0
Figure 9. Schottky Diode Forward Voltage
5
10
15
VR, REVERSE VOLTAGE (V)
20
Figure 10. Schottky Diode Reverse Current
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
5
FDFMA2P853 Rev. D2 (W)
FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics
FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Dimensional Outline and Pad Layout
rev3
FDFMA2P853 Rev. D2 (W)
6
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Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications may
change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later date.
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Semiconductor. The datasheet is for reference information only.
Rev. I36
7
FDFMA2P853 Rev. D2 (W)
FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
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