FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. MOSFET: The MicroFET 2x2 package offers exceptional thermal perfo rmance for it's physica l size and is well suited to linear mode applications. Schottky: -3.0 A, -20V. RDS(ON) = 120 m: @ VGS = -4.5 V RDS(ON) = 160 m: @ VGS = -2.5 V RDS(ON) = 240 m: @ VGS = -1.8 V VF < 0.46 V @ 500 mA Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm RoHS Compliant A NC D C MicroFET C D G A 1 6 C NC 2 5 G D 3 4 S S Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Parameter MOSFET Drain-Source Voltage VGSS MOSFET Gate-Source Voltage ID Drain Current -Continuous -Pulsed (Note 1a) Ratings -20 Units V r8 V -3.0 A -6 VRRM Schottky Repetitive Peak Reverse voltage IO Schottky Average Forward Current (Note 1a) 1 PD Power dissipation for Single Operation Power dissipation for Single Operation (Note 1a) (Note 1b) 1.4 TJ, TSTG Operating and Storage Junction Temperature Range V 30 A W 0.7 o -55 to +150 C Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 RTJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) 86 RTJA Thermal Resistance, Junction-to-Ambient (Note 1d) 140 o C/W Package Marking and Ordering Information Device Marking .853 Device FDFMA2P853 ©2008 Fairchild Semiconductor Corporation Reel Size 7inch 1 Tape Width 8mm Quantity 3000 units FDFMA2P853 Rev. D2 (W) FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode September 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = –250 PA VGS = 0 V, ID = –250 PA, Referenced to 25qC –20 V 'BVDSS 'TJ IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 PA IGSS Gate–Body Leakage VGS = ± 8 V, VDS = 0 V ±100 nA On Characteristics mV/qC –12 (Note 2) –0.4 –0.7 –1.3 V VGS(th) 'VGS(th) 'TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 PA VDS = VGS, ID = –250 PA, Referenced to 25qC ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –3.0 A 7 S VDS = –10 V, f = 1.0 MHz V GS = 0 V, 435 pF 80 pF 45 pF mV/qC 2 VGS = –4.5 V, ID = –3.0 A VGS = –2.5 V, ID = –2.5 A VGS = –1.8 V, ID = –1.0 A VGS= –4.5 V, ID = –3.0 A, TJ=125qC 120 160 240 160 90 120 172 118 –20 m: A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics (Note 2) VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 : td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 15 27 ns tf Turn–Off Fall Time 6 12 ns 4 6 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –10 V, VGS = –4.5 V ID = –3.0 A, 9 18 ns 11 19 ns nC 0.8 nC 0.9 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = –1.1 A (Note 2) IF = –3.0 A, dIF/dt = 100 A/µs –0.8 –1.1 A –1.2 V 17 ns 6 nC Schottky Diode Characteristics IR Reverse Leakage VR = 5 V TJ = 25qC TJ = 125qC 9.9 2.3 50 10 PA mA IR Reverse Leakage VR = 20 V TJ = 25qC TJ = 85qC TJ = 125qC 9.9 0.3 2.3 100 1 10 PA mA mA VF Forward Voltage IF = 500mA TJ = 25qC TJ = 125qC 0.4 0.3 0.46 0.35 V VF Forward Voltage IF = 1A TJ = 25qC TJ = 125qC 0.5 0.49 0.55 0.54 V 2 FDFMA2P853 Rev D2 (W) FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the user's board design. (a) MOSFET RTJA = 86°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) MOSFET RTJA = 173°C/W when mounted on a minimum pad of 2 oz copper (c) Schottky RTJA = 86°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (d) Schottky RTJA = 140°C/W when mounted on a minimum pad of 2 oz copper a) 86oC/W when mounted on a 1in2 pad of 2 oz copper b) 173oC/W when mounted on a minimum pad of 2 oz copper c) 86oC/W when mounted on a 1in2 pad of 2 oz copper d) 140oC/W when mounted on a minimum pad of 2 oz copper Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0% 3 FDFMA2P853 Rev. D2 (W) FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TA = 25°C unless otherwise noted 3 6 -2.5V VGS = -1.5V -2.0V 5 -ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.5V -3.0V 4 -1.8V 3 2 -1.5V 1 2.2 1.8 -1.8V -2.0V 1.4 -2.5V -3.0V 0 0.5 1 1.5 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 2.5 Figure 1. On-Region Characteristics -4.5V 1 2 3 4 -ID, DRAIN CURRENT (A) 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.28 1.4 RDS(ON), ON-RESISTANCE (OHM) ID = -3.0A VGS = -4.5V 1.3 1.2 1.1 1 0.9 0.8 -50 ID = -1.5A 0.22 0.16 TA = 125oC 0.1 TA = 25oC 0.04 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0 Figure 3. On-Resistance Variation with Temperature 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 6 10 VDS = -5V -IS, REVERSE DRAIN CURRENT (A) VGS = 0V 5 -ID, DRAIN CURRENT (A) -3.5V 1 0.6 0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 4 3 TA = 125oC 2 o -55 C 1 25oC 0 0 0.5 1 1.5 2 1 0.1 o TA = 125 C 0.01 25oC -55oC 0.001 0.0001 2.5 0 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4 FDFMA2P853 Rev. D2 (W) FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics 700 ID = -3.0A VDS = -5V -15V 3 -10V 2 500 400 Ciss 300 200 Coss 1 100 Crss 0 0 0 1 2 3 Qg, GATE CHARGE (nC) 4 5 0 Figure 7. Gate Charge Characteristics 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 8. Capacitance Characteristics 0.01 1 IR, REVERSE LEAKAGE CURRENT (A) 10 IF, FORWARD LEAKAGE CURRENT(A) f = 1MHz VGS = 0 V 600 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 TJ = 125oC 0.1 o TJ = 25 C 0.01 0.001 TJ = 125oC 0.001 TJ = 85oC 0.0001 0.00001 TJ = 25oC 0.000001 0 0.1 0.2 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (V) 0.7 0.8 0 Figure 9. Schottky Diode Forward Voltage 5 10 15 VR, REVERSE VOLTAGE (V) 20 Figure 10. Schottky Diode Reverse Current Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 5 FDFMA2P853 Rev. D2 (W) FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Dimensional Outline and Pad Layout rev3 FDFMA2P853 Rev. 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