MITSUBISHI PM200CSA060

MITSUBISHI INTELLIGENT POWER MODULES
PM200CSA060
FLAT-BASE TYPE
INSULATED PACKAGE
A
B
H
AA - DIA.
(4 TYP.)
W
W
Y
Z
12 3 4
5678
9 11
13 15 17 19
N
Q
1. V UPC
2. UFO
3. U P
4. V UPI
5. V VPC
6. VFO
7. V P
8. V VPI
9. V WPC
10. WFO
V
P
T
Y
R Y
AC
W
AC
10 12
14 16 18
AE (15 TYP.)
J
E C
F
B
Q
AB - THD
(6 TYP.)
11. W P
12. V WPI
13. V NC
14. V NI
15. NC
16. U N
17. V N
18. W N
19. FO
W
U
AH
AH
W
V
G
M
M
Z
S
D
Z
Description:
Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to
20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel
diode power devices.
Y
Z
2.54 MM DIA. (2 TYP.)
0.5 MM SQ. PIN
(19 TYP.)
AD
AG
U
X
V UPC
UP
U FO
V UPI
Features:
u Complete Output Power
Circuit
OUT V CC
FO
IN
GND GND
OUT V CC
V VPC
VP
V FO
V VPI
IN
FO
SI
OUT V CC
GND GND
V WPC
WP
W FO
V WPI
IN
FO
SI
GND GND
UN
FO
IN
OUT V CC
SI
GND GND
VN
FO
IN
OUT V CC
SI
GND GND
OUT V CC
VNI
V NC
WN
IN
FO
SI
FO
NC
GND GND
TEMP
K
L
N
P
SI
AF
u Gate Drive Circuit
NC
N
W
V
U
u Protection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
P
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
5.31±0.04
135.0±1.0
B
4.74±0.02
C
D
Dimensions
Inches
Millimeters
S
0.69
17.5
120.5±0.5
T
0.65
16.5
4.33±0.04
110.0±1.0
U
0.52
13.2
4.27
10.5
V
0.43
11.0
E
3.76±0.02
95.5±0.5
W
0.39
10.0
F
3.29
83.5
X
0.31
8.0
G
2.01
51.0
Y
0.285
7.25
H
1.602
40.68
Z
0.24
6.0
J
1.54
39.0
AA
0.22 Dia.
Dia. 5.5
K
1.37
34.7
AD
Metric M5
M5
L
1.33
33.7
AC
0.128
3.22
M
1.02
26.0
AD
0.10
2.6
N
AE
0.08
2.0
P
0.95 +0.06/-0.0 24.1 +1.5/-0.0
0.84
21.3
AF
0.07
1.8
Q
0.79
20.0
AG
0.06
1.6
R
0.780
19.82
AH
0.02
0.5
Applications:
u Inverters
u UPS
u Motion/Servo Control
u Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM200CSA060 is a 600V,
200 Ampere Intelligent Power Module.
Type
PM
Current Rating
Amperes
VCES
Volts (x 10)
200
60
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM200CSA060
FLAT-BASE TYPE
INSULATED PACKAGE
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Symbol
Ratings
Units
Tj
-20 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Case Operating Temperature
TC
-20 to 100
°C
Mounting Torque, M5 Mounting Screws
—
1.47 ~ 1.96
N·m
Mounting Torque, M5 Main Terminal Screws
—
1.47 ~ 1.96
N·m
Module Weight (Typical)
—
920
Grams
Power Device Junction Temperature
Supply Voltage Protected by OC and SC (V D = 13.5 - 16.5V, Inverter Part)
VCC(prot.)
400
Volts
Viso
2500
Vrms
Supply Voltage (Applied between VUP1-VUPC , VVP1-VVPC, VWP1-VWPC, VN1-VNC)
VD
20
Volts
Input Voltage (Applied between U P-VUPC , VP-VVPC, WP-VWPC, UN · VN · WN-VNC)
VCIN
20
Volts
Fault Output Supply Voltage (Applied between U FO-VUPC, VFO-V VPC, WFO-VWPC , FO-V NC)
VFO
20
Volts
Fault Output Current (Sink Current of UFO, VFO, WFO and FO Terminal)
I FO
20
mA
VCES
600
Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Control Sector
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V)
Collector Current, (TC = 25°C)
Peak Collector Current, (TC = 25°C)
Supply Voltage (Applied between P - N)
Supply Voltage, Surge (Applied between P - N)
Collector Dissipation
IC
200
Amperes
I CP
400
Amperes
VCC
450
Volts
VCC(surge)
500
Volts
PC
595
Watts
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM200CSA060
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Control Sector
Over Current Trip Level Inverter Part
OC
-20°C ≤ T ≤ 125°C, VD = 15V
310
400
—
Amperes
Short Circuit Trip Level Inverter Part
SC
—
560
—
Amperes
toff(OC)
-20°C ≤ T ≤ 125°C, VD = 15V
VD = 15V
—
10
—
µs
OT
Trip Level
111
118
125
°C
OTr
Reset Level
—
100
—
°C
UV
Trip Level
11.5
12.0
12.5
Volts
Over Current Delay Time
Over Temperature Protection
Supply Circuit Under Voltage Protection
UVr
Reset Level
—
12.5
—
Volts
Supply Voltage
VD
Applied between V UP1-VUPC,
13.5
15
16.5
Volts
Circuit Current
ID
—
40
55
mA
VVP1-VVPC, VWP1-VWPC, VN1-VNC
VD = 15V, VCIN = 15V, VN1 -VNC
VD = 15V, VCIN = 15V, VXP1 -VXPC
—
13
18
mA
Input ON Threshold Voltage
Vth(on)
Applied between
1.2
1.5
1.8
Volts
Input OFF Threshold Voltage
Vth(off)
UP-VUPC, VP-VVPC, W P-VWPC,
1.7
2.0
2.3
Volts
PWM Input Frequency
fPWM
UN · VN · WN-V NC
3-φ Sinusoidal
—
15
20
kHz
Fault Output Current
I FO(H)
VD = 15V, VFO = 15V
—
—
0.01
mA
I FO(L)
VD = 15V, VFO = 15V
—
10
15
mA
t FO
VD = 15V
1.0
1.8
—
ms
Minimum Fault Output Pulse Width
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM200CSA060
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGBT Inverter Sector
Collector Cutoff Current
Diode Forward Voltage
Collector-Emitter Saturation Voltage
ICES
VCE = VCES, Tj = 25°C
—
—
1.0
mA
VCE = VCES, Tj = 125°C
—
—
10
mA
VEC
-IC = 200A, VD = 15V, VCIN = 15V
—
1.9
2.8
Volts
VCE(sat)
VD = 15V, VCIN = 0V, I C = 200A
—
1.8
2.7
Volts
VD = 15V, VCIN = 0V, I C = 200A,
—
1.75
2.63
Volts
Tj = 125°C
Inductive Load Switching Times
0.4
0.8
2.0
µs
t rr
VD = 15V, VCIN = 0 ↔ 15V
—
0.15
0.3
µs
t C(on)
VCC = 300V, I C = 200A
—
0.4
1.0
µs
t off
Tj = 125°C
—
2.0
2.9
µs
—
0.6
1.2
µs
t on
t C(off)
Thermal Characteristics
Characteristic
Symbol
Condition
Min.
Typ.
Max.
Units
Junction to Case Thermal Resistance
Rth(j-c)Q
Each IGBT
—
—
0.21
°C/Watt
Contact Thermal Resistance
Rth(j-c)F
Each FWDi
—
—
0.35
°C/Watt
Rth(c-f)
Case to Fin Per Module,
—
—
0.018
°C/Watt
Value
Units
Thermal Grease Applied
Recommended Conditions for Use
Characteristic
Symbol
Condition
Supply Voltage
VCC
Applied across P-N Terminals
0 ~ 400
Volts
VD
Applied between VUP1-VUPC,
15 ± 1.5
Volts
VN1-VNC, VVP1 -VVPC, VWP1-VWPC
Input ON Voltage
VCIN(on)
Applied between
0 ~ 0.8
Volts
Input OFF Voltage
VCIN(off)
UP-VUPC, VP-VVPC, W P-V WPC,
4.0 ~ VD
Volts
PWM Input Frequency
fPWM
UN · VN · WN-V NC
Using Application Circuit
5 ~ 20
kHz
Minimum Dead Time
t dead
Input Signal
≥ 2.5
µs
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM200CSA060
FLAT-BASE TYPE
INSULATED PACKAGE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
1
IC = 200A
VCIN = 0V
Tj = 25oC
Tj = 125oC
15
100
200
300
VD = 17V
100
0
12
0
14
16
18
20
22
0
1
2
3
COLLECTOR CURRENT, IC, (AMPERES)
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
101
101
toff
100
ton
10-1
101
102
100
VCC = 300V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
100
tc(off)
tc(on)
10-1
101
103
REVERSE RECOVERY TIME, trr, (µs)
SWITCHING TIMES, tc(on), tc(off), (µs)
VCC = 300V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
102
103
102
Irr
trr
10-1
101
VCC = 300V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
10-2
101
100
103
102
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR REVERSE CURRENT, –IC, (AMPERES)
DIODE FORWARD CHARACTERISTICS
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
OVER CURRENT TRIP LEVEL
TEMPERATURE DEPENDENCY (TYPICAL)
103
120
120
102
Tj = 25oC
OVER CURRENT TRIP LEVEL % (NORMALIZED)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
VD = 15V
VCIN = 15V
Tj = 25oC
Tj = 125oC
101
0.4
13
200
0
0
SWITCHING TIMES, ton, toff, (µs)
2
VCIN = 0V
100
80
60
40
20
10
0
0.8
1.2
1.6
2.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
2.4
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
1
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
2
0
COLLECTOR REVERSE CURRENT, –IC, (AMPERES)
300
3
VD = 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
SATURATION VOLTAGE VCE(sat), (VOLTS)
3
OUTPUT CHARACTERISTICS
(TYPICAL)
0
12
14
16
18
SUPPLY VOLTAGE, VD, (VOLTS)
20
VD = 15V
100
80
60
40
0
-50
0
50
100
150
JUNCTION TEMPERATURE, Tj, (oC)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM200CSA060
FLAT-BASE TYPE
INSULATED PACKAGE
UVt
UVr
VD = 15V
14
100
UV TRIP-RESET LEVEL,
UVt, UVr, (VOLTS)
FAULT OUTPUT PULSE WIDTH % (NORMALIZED)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
15
120
80
60
13
12
11
40
0
0
-50
0
50
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
150
JUNCTION TEMPERATURE, Tj, (oC)
-50
0
50
100
JUNCTION TEMPERATURE, Tj, (oC)
150
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.21oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 0.35oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000