MITSUBISHI INTELLIGENT POWER MODULES PM150RSA060 FLAT-BASE TYPE INSULATED PACKAGE A B U R W Q U AB AD 12 3 4 5678 13 15 17 19 9 11 10 12 F Z - DIA. (4 TYP.) C AA - THD (6 TYP.) U N AG S E P M 1. V UPC 2. UFO 3. U P 4. V UPI 5. V VPC 6. VFO 7. V P 8. V VPI 9. V WPC 10. WFO 14 16 18 AD (15 TYP.) B M Y (4 TYP.) AB U W W U V X X AG K J J 11. WP 12. V WPI 13. V NC 14. V NI 15. B R 16. U N 17. V N 18. WN 19. FO P D 2.54 MM DIA. (2 TYP.) Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. 0.5 MM SQ. PIN (19 TYP.) AE T B N UP U FO VUPI V CC OUT VUPC FO GND GND IN VP V FO V VPI V CC OUT SI V VPC V IN FO SI W FO V WPI V CC OUT W GND GND V WPC WP FO SI AC GND GND V CC OUT IN FO SI GND GND VN V CC IN FO TEMP OUT GND GND OUT V CC VNI V NC WN IN FO GND GND SI FO BR IN FO V CC OUT SI UN AF V GND GND L IN N SI G H U Features: u Complete Output Power Circuit u Gate Drive Circuit u Protection Logic P – Short Circuit – Over Current – Over Temperature – Under Voltage Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.33±0.04 110.0±1.0 S 0.67 17.0 B 3.74±0.02 95.0±0.5 T 0.52 13.2 C 3.50±0.04 89.0±1.0 U 0.39 10.0 D 3.27 83.0 V 0.276 7.0 E 2.91±0.02 74.0±0.5 W 0.30 7.5 F 2.44 62.0 X 0.24 6.0 G 1.28 32.6 Y 0.24 Rad. Rad. 6.0 H 1.24 31.6 Z 0.22 Dia. Dia. 5.5 J 1.02 26.0 AA Metric M5 M5 K 0.94 24.0 AB 0.127 L 0.87 +0.06/-0.0 22.0 +1.5/-0.0 Dimensions Inches Millimeters 3.22 AC 0.10 2.6 M 0.79 20.0 AD 0.08 2.0 N 0.76 19.4 AE 0.07 1.8 P 0.75 19.0 AF 0.06 1.6 Q 0.708 17.98 AG 0.02±0.01 0.5±0.3 R 0.670 17.02 Applications: u Inverters u UPS u Motion/Servo Control u Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM150RSA060 is a 600V, 150 Ampere Intelligent Power Module. Type PM Current Rating Amperes VCES Volts (x 10) 150 60 Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM150RSA060 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Symbol Ratings Units Tj -20 to 150 °C Storage Temperature Tstg -40 to 125 °C Case Operating Temperature TC -20 to 100 °C Mounting Torque, M5 Mounting Screws — 1.47~1.96 N·m Mounting Torque, M5 Main Terminal Screw — 1.47~1.96 N·m Power Device Junction Temperature Module Weight (Typical) Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125°C) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) — 550 Grams VCC(prot.) 400 Volts Viso 2500 Vrms Control Sector Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC) VD 20 Volts VCIN 20 Volts VFO 20 Volts IFO 20 mA VCES 600 Volts IC 150 Amperes Peak Collector Current, (TC=25°C) ICP 300 Amperes Supply Voltage (Applied between P - N) VCC 450 Volts VCC(surge) 500 Volts PC 500 Watts VCES 600 Volts Input Voltage (Applied between U P-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN · Br-VNC) Fault Output Supply Voltage (UFO-VUPC, VFO-VVPC, WFO-VWPC, FO-VNC) Fault Output Current (Sink Current at UFO, VFO, W FO and F O Terminal) IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current, (TC=25°C) Supply Voltage, Surge (Applied between P - N) Collector Dissipation Brake Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current, (TC=25°C) Peak Collector Current, (TC=25°C) Supply Voltage (Applied between P - N) IC 50 Amperes ICP 100 Amperes VCC 450 Volts VCC(surge) 500 Volts Collector Dissipation PC 312 Watts Diode Forward Current IF 50 Amperes VR(DC) 600 Volts Supply Voltage, Surge (Applied between P - N) Diode DC Reverse Voltage Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM150RSA060 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units OC -20°C ≤ T ≤ 125°C, VD=15V 210 300 — Amperes 65 88 — Amperes Control Sector Over Current Trip Level Inverter Part Over Current Trip Level Brake Part Short Circuit Trip Level Inverter Part SC -20°C ≤ T ≤ 125°C, VD=15V Short Circuit Trip Level Brake Part Over Current Delay Time Over Temperature Protection Supply Circuit Under Voltage Protection — 420 — Amperes — 132 — Amperes t off(OC) VD = 15V — 10 — µs OT Trip Level 111 118 125 °C OTr Reset Level — 100 — °C UV Trip Level 11.5 12.0 12.5 Volts UVr Reset Level — 12.5 — Volts Supply Voltage VD Applied between VUP1-VUPC, 13.5 15 16.5 Volts Circuit Current ID — 52 72 mA VVP1-VVPC, VWP1-VWPC, VN1-VNC VD = 15V, VCIN = 15V, VN1-VNC VD = 15V, VCIN = 15V, VXP1-VXPC — 13 18 mA Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts Input OFF Threshold Voltage Vth(off) UP-VUPC , VP-VVPC, WP-VWPC, 1.7 2.0 2.3 Volts UN · VN · WN · Br-VNC PWM Input Frequency f PWM 3-φ Sinusoidal — 15 20 kHz Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA IFO(L) VD = 15V, VFO = 15V — 10 15 mA tFO VD = 15V 1.0 1.8 — ms VCE(sat) VD = 15V, VCIN = 0V, I C = 50A, — 2.7 3.5 Volts — 2.5 3.4 Volts Minimum Fault Output Pulse Width Brake Sector Collector-Emitter Saturation Voltage Tj = 25°C VD = 15V, VCIN = 0V, I C = 50A, Tj = 125°C Diode Forward Voltage VFM IF = 50A, VD = 15V, VCIN = 15V — 1.7 2.5 Volts Collector Cutoff Current ICES VCE = VCES, Tj = 25°C — — 1 mA VCE = VCES, Tj = 125°C — — 10 mA Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM150RSA060 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector Cutoff Current Diode Forward Voltage Collector-Emitter Saturation Voltage ICES VEC VCE(sat) VCE = VCES, Tj = 25°C — — 1 mA VCE = VCES, Tj = 125°C — — 10 mA -IC = 150A, VD = 15V, VCIN = 15V — 2.2 3.3 Volts VD = 15V, VCIN = 0V, IC = 150A, Tj = 25°C — 1.8 2.7 Volts 1.75 2.63 Volts VD = 15V, VCIN = 0V, IC = 150A, — Tj = 125°C Inductive Load Switching Times 0.4 0.8 2.0 µs trr VD = 15V, VCIN = 0 ↔ 15V — 0.15 0.3 µs tC(on) VCC = 300V, IC = 150A — 0.4 1.0 µs toff Tj = 125°C — 2.0 2.9 µs — 0.6 1.2 µs Min. Typ. Max. Units ton tC(off) Thermal Characteristics Characteristic Symbol Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT — — 0.25 °C/Watt Rth(j-c)F Each Inverter FWDi — — 0.47 °C/Watt Rth(c-f)Q Each Brake IGBT — — 0.4 °C/Watt Rth(c-f)F Each Brake FWDi — — 1.0 °C/Watt Case to Fin Per Module, — — 0.027 °C/Watt Value Units Contact Thermal Resistance Rth(c-f) Condition Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Supply Voltage VCC Applied across P-N Terminals 0 ~ 400 Volts VD Applied between VUP1-VUPC, 15 ± 1.5 Volts VN1-VNC, VVP1-VVPC, VWP1-VWPC Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts Input OFF Voltage VCIN(off) UP, VP, WP, UN , VN , WN, Br 4.0 ~ VD Volts PWM Input Frequency f PWM Using Application Circuit 5 ~ 20 kHz Minimum Dead Time tdead Input Signal ≥ 2.5 µs Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM150RSA060 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3.0 2.0 1.5 1.0 0.5 0 2.5 2.0 1.5 1.0 IC = 150A VCIN = 0V Tj = 25oC Tj = 125oC 0.5 0 0 50 100 150 200 50 12 14 16 18 20 0 0.5 1.0 1.5 2.0 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 101 100 102 VCC = 300V VD = 15V toff 100 ton 10-1 101 102 Irr Inductive Load o Tj = 25 C Tj = 125oC 100 tc(off) tc(on) 10-1 101 103 REVERSE RECOVERY TIME, trr, (µs) SWITCHING TIMES, tc(on), tc(off), (µs) Tj = 25oC Tj = 125oC 102 10-1 VCC = 300V VD = 15V Inductive Load Tj = 25oC Tj = 125oC 10-2 101 103 101 trr 100 103 102 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR REVERSE CURRENT, -IC, (AMPERES) DIODE FORWARD CHARACTERISTICS OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) OVER CURRENT TRIP LEVEL VS. TEMPERATURE (TYPICAL) 120 120 102 101 Tj = 25oC OVER CURRENT TRIP LEVEL % (NORMALIZED) VD = 15V VCIN = 15V Tj = 25oC Tj = 125oC OVER CURRENT TRIP LEVEL % (NORMALIZED) SWITCHING TIMES, ton, toff, (µs) 13 SUPPLY VOLTAGE, VD, (VOLTS) Inductive Load COLLECTOR REVERSE CURRENT, -IC, (AMPERES) 15 100 COLLECTOR CURRENT, IC, (AMPERES) VCC = 300V VD = 15V 100 80 60 0 0.4 VD = 17V 0 0 101 103 Tj = 25oC VCIN = 0V 0.8 1.2 1.6 2.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 2.4 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 2.5 150 COLLECTOR CURRENT, IC, (AMPERES) VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) SATURATION VOLTAGE VCE(sat), (VOLTS) 3.0 OUTPUT CHARACTERISTICS (TYPICAL) VD = 15V 100 80 60 40 0 0 12 14 16 18 SUPPLY VOLTAGE, VD, (VOLTS) 20 -50 0 50 100 150 JUNCTION TEMPERATURE, Tj, (oC) Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM150RSA060 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 15 UV UVr 100 14 UV TRIP-RESET LEVEL, UVt, UVr, (VOLTS) FAULT OUTPUT PULSE WIDTH % (NORMALIZED) 120 80 60 40 13 12 11 VD = 15V 0 0 -50 0 50 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) 150 -50 0 50 100 JUNCTION TEMPERATURE, TC, (oC) JUNCTION TEMPERATURE, Tj, (oC) 150 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.25oC/W 10-3 10-3 10-2 10-1 100 10-3 101 TIME, (s) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 0.47oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM150RSA060 FLAT-BASE TYPE INSULATED PACKAGE Brake Part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VD = 17V 15V 13V 40 20 0 1 2 3 4 1 0 20 40 60 80 2 IC = 20A 1 0 100 IC = 50A 12 14 16 18 20 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT per 1 element) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi per 1 element) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) FORWARD CURRENT IF (A) Tj = 125°C 3 FORWARD VOLTAGE VF (V) Tj = 125°C Tj = 25°C 7 5 4 3 2 0 2 4 COLLECTOR CURRENT IC (A) 101 100 Tj = 25°C Tj = 25°C VCIN = 0V COLLECTOR-EMITTER VOLTAGE VCE (V) VD = 15V VCIN = 15V 2 3 0 5 102 7 5 4 3 4 0.4 0.8 1.2 SUPPLY VOLTAGE VD (V) 1.6 2.0 101 101 100 100 7 5 Single Pulse 3 STANDARD VALUE 2 = Rth(j – c)Q = 0.4°C/ W 7 5 3 2 10–1 7 5 3 2 10–2 7 5 3 2 10–3 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 0 VD = 15V VCIN = 0V COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 80 60 5 5 Tj = 25°C VCIN = 0V COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) 100 COLLECTOR-EMITTER SATURATION VOLTAGE VS. SUPPLY VOLTAGE (TYPICAL) 7 5 Single Pulse 3 STANDARD VALUE 2 = Rth(j – c)F = 1.0°C/ W 7 5 3 2 10–1 7 5 3 2 10–2 7 5 3 2 10–3 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 TIME (s) Sep.2000