MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ. on VHF Band High Efficiency: 55%typ. on UHF Band 1.3+/-0.4 3.6+/-0.2 4.8MAX FEATURES DRAWING 9.1+/-0.7 12.3+/-0.6 RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions. 12.3MIN DESCRIPTION 1.2+/-0.4 0.8+0.10/-0.15 1 2 3 APPLICATION 0.5+0.10/-0.15 5deg 9.5MAX RoHS COMPLIANT 4.5+/-0.5 2.5 2.5 3.1+/-0.6 For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. PINS 1:GATE 2:SOURCE 3:DRAIN note: RD15HVF1-101 is a RoHS compliant products. Torelance of no designation means typical value. RoHS compliance is indicate by the letter “G” after the lot Dimension in mm. marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) RD15HVF1 MITSUBISHI ELECTRIC 1/9 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 30 +/-20 48 1.5(Note2) 4 150 -40 to +150 2.6 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. Note 2: Over 300MHz use spec is 6W ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout1 ηD1 Pout2 ηD2 PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.6W, f=175MHz,Idq=0.5A VDD=12.5V, Pin=3W, f=520MHz,Idq=0.5A VDD=15.2V,Po=15W(PinControl) f=175MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) VDD=15.2V,Po=15W(PinControl) f=520MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.5 15 55 15 50 LIMITS TYP MAX. 100 1 2.0 2.5 18 60 18 55 No destroy No destroy UNIT uA uA V W % W % - - Note : Above parameters , ratings , limits and conditions are subject to change. RD15HVF1 MITSUBISHI ELECTRIC 2/9 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 10 CHANNEL DISSIPATION Pch(W) 100 Vgs-Ids CHARACTERISTICS 8 60 6 Ids(A) 80 40 Ta=+25°C Vds=10V 4 2 20 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 Vds-Ids CHARACTERISTICS 8 Vgs=10V Vgs=9V Vgs=8V Vgs=7V 10 6 Vgs=6V 4 Vgs=5V Ta=+25°C f=1MHz 60 Ciss(pF) Ids(A) 8 80 Ta=+25°C Vgs=3V 0 0 0 2 4 6 Vds(V) 8 40 20 Vgs=4V 2 0 10 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 100 10 Ta=+25°C f=1MHz 80 Ta=+25°C f=1MHz 8 60 Crss(pF) Coss(pF) 4 6 Vgs(V) Vds VS. Ciss CHARACTERISTICS 10 40 6 4 2 20 0 0 0 RD15HVF1 2 5 10 Vds(V) 15 20 0 MITSUBISHI ELECTRIC 3/9 5 10 Vds(V) 15 20 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 100 Po Po 20 30 60 ηｄ Gp 40 20 10 80 ηd 15 60 10 40 Ta=25°C f=175MHz Vdd=12.5V Idq=0.5A 20 5 0 0 0.0 ηd(%) 80 Pout(W) , Idd(A) 40 25 100 Ta=+25°C f=175MHz Vdd=12.5V Idq=0.5A ηd(%) Po(dBm) , Gp(dB) , Idd(A) 50 Pin-Po CHARACTERISTICS 20 Idd Ｉｄｄ 0 0 10 20 Pin(dBm) 30 0 0.5 40 Pin-Po CHARACTERISTICS 100 25 80 20 100 Po 80 20 40 ηｄ Gp 10 60 15 Po Ta=25°C f=520MHz Vdd=12.5V Idq=0.5A 10 20 5 0 0 40 ηd(%) 60 30 Pout(W) , Idd(A) ηd ηd(%) Po(dBm) , Gp(dB) , Idd(A) Ta=+25°C f=520MHz Vdd=12.5V Idq=0.5A 1.5 Pin(W) Pin-Po CHARACTERISTICS 50 1.0 20 Idd Ｉｄｄ 0 10 20 Pin(dBm) 30 40 0 0 1 Vdd-Po CHARACTERISTICS 15 4 20 3 15 Idd 10 2 5 0 4 RD15HVF1 25 6 8 10 Vdd(V) 12 14 Po(W) Po 5 Idd(A) Po(W) 20 3 Pin(W) 4 5 6 Vdd-Po CHARACTERISTICS 25 Ta=25°C f=175MHz Pin=0.6W Idq=0.5A Zg=ZI=50 ohm 2 5 Ta=25°C f=520MHz Pin=3W Idq=0.5A Zg=ZI=50 ohm 4 Po 3 Idd 10 2 1 5 1 0 0 Idd(A) 0 0 4 MITSUBISHI ELECTRIC 4/9 6 8 10 Vdd(V) 12 14 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS Vgs-Ids CHARACTERISTICS 2 10 Vds=10V Tc=-25~+75°C Ids(A) 8 -25°C +25°C 6 +75°C 4 2 0 0 2 4 6 Vgs(V) 8 10 TEST CIRCUIT(f=175MHz) Vdd Vgg C1 9.1kOHM C3 L3 8.2kOHM 100OHM C2 175MHz RD15HVF1 L1 RF-IN L2 RF-OUT 56pF 82pF 56pF 25pF 10pF 25pF 25pF 7 25pF 25pF 25pF 25pF 7 22 12 40 42 45 62 73 74 92 95 100 100 Note:Board material-Teflon substrate C1:2200pF 10uF in parallel micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm C2:2200pF*2 in parallel C3:2200pF,330uF in parallel Dimensions:mm L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire RD15HVF1 MITSUBISHI ELECTRIC 5/9 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TEST CIRCUIT(f=520MHz) Vdd Vgg C1 9.1kOHM 8.2kOHM C3 L3 100OHM 10pF L1 15pF C2 520MHz RD15HVF1 RF-IN L2 RF-OUT 56pF 56pF 5pF 12pF 7 7 90 90 100 100 Note:Board material-Teflon substrate C1:2200pF 10uF in parallel micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm C2:2200pF*2 in parallel C3:2200pF,330uF in parallel Dimensions:mm L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire RD15HVF1 MITSUBISHI ELECTRIC 6/9 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=520MHz Zout f=520MHz Zin f=175MHz Zout Zo=50ohm f=175MHz Zin RD15HVF1 Zin , Zout f (MHz) Zin (ohm) Zout (ohm) Conditions 175 2.34-j8.01 3.06+j0.74 Po=15W, Vdd=12.5V,Pin=0.6W 520 5.42+j9.22 6.02+j12.34 Po=15W, Vdd=12.5V,Pin=3.0W MITSUBISHI ELECTRIC 7/9 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W RD15HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 50 100 150 175 200 250 300 350 400 450 500 520 550 800 850 900 950 1000 1050 RD15HVF1 S11 (mag) 0.717 0.726 0.744 0.748 0.755 0.770 0.787 0.804 0.821 0.838 0.849 0.854 0.862 0.900 0.904 0.909 0.910 0.910 0.911 S21 (ang) -145.9 -163.9 -171.1 -173.6 -175.9 -179.0 177.6 174.6 171.2 168.2 165.1 163.7 161.7 145.0 141.3 137.9 134.6 131.2 127.5 (mag) 23.274 12.054 8.049 6.804 5.886 4.622 3.731 3.092 2.623 2.229 1.938 1.845 1.695 0.971 0.864 0.790 0.738 0.662 0.612 S12 (ang) 101.8 85.7 74.7 70.2 66.3 58.6 51.5 45.3 39.1 33.2 28.3 26.1 22.9 4.2 0.0 -1.4 -4.4 -6.8 -8.4 (mag) 0.023 0.024 0.025 0.025 0.026 0.030 0.036 0.044 0.053 0.062 0.072 0.076 0.082 0.135 0.143 0.153 0.163 0.170 0.178 MITSUBISHI ELECTRIC 8/9 S22 (ang) 26.0 27.7 36.1 41.8 48.1 57.7 65.3 70.3 73.5 74.6 73.9 73.9 72.6 62.8 59.6 57.8 54.8 51.4 49.4 (mag) 0.556 0.547 0.560 0.571 0.588 0.625 0.647 0.683 0.716 0.734 0.765 0.777 0.788 0.859 0.870 0.877 0.880 0.886 0.892 (ang) -130.2 -150.4 -157.8 -160.1 -161.8 -164.3 -167.5 -170.9 -173.7 -176.8 179.4 178.0 176.3 159.0 155.7 152.4 149.0 145.7 142.1 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD15HVF1 MITSUBISHI ELECTRIC 9/9 7 Mar 2008