$GYDQFHG 3RZHU 026)(7 IRFR/U014A FEATURES BVDSS = 60 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.14Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8.2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V D-PAK ♦ Lower RDS(ON): 0.097Ω (Typ.) I-PAK 2 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID Characteristic Value Drain-to-Source Voltage 60 Continuous Drain Current (TC=25°C) 8.2 Continuous Drain Current (TC=100°C) 5.2 Units V A IDM Drain Current-Pulsed VGS Gate-to-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (2) 58 mJ A A 33 (1) IAR Avalanche Current (1) 8.2 EAR Repetitive Avalanche Energy (1) 1.8 mJ dv/dt Peak Diode Recovery dv/dt (3) 5.5 V/ns Total Power Dissipation (TA=25°C) * 2.5 W Total Power Dissipation (TC=25°C) 18 W 0.14 W/°C PD Linear Derating Factor TJ , TSTG TL Operating Junction and - 55 to +150 Storage Temperature Range °C Maximum Lead Temp. for Soldering 300 Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol RθJC Characteristic Typ. Max. Junction-to-Case -- 7.04 RθJA Junction-to-Ambient * -- 50 RθJA Junction-to-Ambient -- 110 Units °C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation 1&+$11(/ 32:(5 026)(7 IRFR/U014A Electrical Characteristics (TC=25°C unless otherwise specified) Characteristic Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage 60 -- -- ∆BV/∆TJ Breakdown Voltage Temp. Coeff. -- 0.060 -- VGS(th) IGSS IDSS RDS(on) Gate Threshold Voltage 2.0 -- 4.0 Gate-Source Leakage , Forward -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 Drain-to-Source Leakage Current Static Drain-Source On-State Resistance -- -- 100 -- -- 0.14 gfs Forward Transconductance -- 6.02 -- Ciss Input Capacitance -- 280 360 Coss Output Capacitance -- 110 125 Crss Reverse Transfer Capacitance -- 40 46 td(on) Turn-On Delay Time -- 11 25 Rise Time -- 17 40 Turn-Off Delay Time -- 27 60 Fall Time -- 28 60 Qg Total Gate Charge -- 12 17 Qgs Gate-Source Charge -- 2.4 -- Qgd Gate-Drain ( Miller ) Charge -- 5.4 -- tr td(off) tf V Test Condition VGS=0V,ID=250µA V/°C ID=250µA V nA µA Ω Ω Symbol pF See Fig 7 VDS=5V,ID=250µA VGS=20V VGS=-20V VDS=60V VDS=48V,TC=125°C VGS=10V,ID=4.1A (4) VDS=30V,ID=4.1A (4) VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=30V,ID=10A, ns RG=24Ω See Fig 13 (4) (5) VDS=48V,VGS=10V, nC ID=10A See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- 8.2 ISM Pulsed-Source Current (1) -- -- 33 VSD Diode Forward Voltage (4) -- -- 1.5 V trr Reverse Recovery Time -- 55 -- ns TJ=25°C,IF=10A Qrr Reverse Recovery Charge -- 0.11 -- µC diF/dt=100A/µs A Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) (3) (4) (5) L=1mH, IAS=8.2A, VDD=25V, RG=27Ω, Starting TJ =25°C ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ BV DSS , Starting TJ =25°C Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2% Essentially Independent of Operating Temperature Integral reverse pn-diode in the MOSFET TJ=25°C,IS=8.2A,VGS= 0V (4) 1&+$11(/ 32:(5 026)(7 IRFR/U014A Fig 1. Output Characteristics Fig 2. Transfer Characteristics VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 101 ID , Drain Current [A] ID , Drain Current [A] Top : @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC 100 10-1 100 101 150 oC 100 @ Notes : 1. VGS = 0 V 2. VDS = 30 V 3. 250 µs Pulse Test 25 oC - 55 oC 10-1 101 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage VGS = 10 V 0.15 0.10 VGS = 20 V 0.05 o @ Note : TJ = 25 C 0.00 0 10 20 30 IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 0.20 101 100 10-1 0.4 40 @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test 150 oC 25 oC 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 600 C iss 400 200 00 10 C oss @ Notes : 1. VGS = 0 V 2. f = 1 MHz C rss 1 10 VDS , Drain-Source Voltage [V] VDS = 12 V 10 VGS , Gate-Source Voltage [V] Capacitance [pF] Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd VDS = 30 V VDS = 48 V 5 @ Notes : ID = 10.0 A 0 0 3 6 9 QG , Total Gate Charge [nC] 12 15 1&+$11(/ 32:(5 026)(7 IRFR/U014A Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 2.5 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -75 @ Notes : 1. VGS = 0 V 2. ID = 250 µA -50 -25 0 25 50 75 100 125 150 2.0 1.5 0.5 -75 175 @ Notes : 1. VGS = 10 V 2. ID = 5 A 1.0 -50 -25 o 0 25 50 75 100 125 150 175 TJ , Junction Temperature [oC] TJ , Junction Temperature [ C] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 10 10 µs 100 µs 101 1 ms 10 ms DC 0 10 @ Notes : 1. TC = 25 oC 8 6 4 2 2. TJ = 150 oC 3. Single Pulse 100 101 0 25 102 50 75 100 Tc , Case Temperature [oC] VDS , Drain-Source Voltage [V] Thermal Response Fig 11. Thermal Response θ 10-1 Z JC(t) , ID , Drain Current [A] ID , Drain Current [A] Operation in This Area is Limited by R DS(on) 102 101 D=0.5 @ Notes : 1. Zθ J C (t)=7.04 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Zθ J C (t) 0.2 100 0.1 0.05 0.02 0.01 PDM t1 single pulse t2 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 t1 , Square Wave Pulse Duration 100 [sec] 101 125 150 1&+$11(/ 32:(5 026)(7 IRFR/U014A Fig 12. Gate Charge Test Circuit & Waveform Current Regulator VGS Same Type as DUT 50kΩ Qg 200nF 12V 10V 300nF VDS Qgs VGS Qgd DUT 3mA R1 R2 Current Sampling (IG) Resistor Charge Current Sampling (ID) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10% 10V tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time 1&+$11(/ 32:(5 026)(7 IRFR/U014A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD dv/dt controlled by RG IS controlled by Duty Factor D Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.