0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Description • Low Noise Figure: 0.5 dB Typical at 4 GHz The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12 GHz frequency range. • Low Bias: VDS = 2 V, IDS␣ =␣ 20 mA • High Associated Gain: 13.0 dB Typical at 4 GHz • High Output Power: 20.0 dBm Typical P1 dB at 4 GHz • Cost Effective Ceramic Microstrip Package • Tape-and Reel Packaging Option Available [1] 36 micro-X Package This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. Electrical Specifications, TA = 25°C Symbol NFO GA Parameters and Test Conditions Optimum Noise Figure: VDS = 2 V, IDS = 25 mA Gain @ NFO; VDS = 2 V, IDS = 25 mA Units f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz dB dB dB f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz dB dB dB Min. Typ. Max. 0.4 0.5 0.8 12.0 0.6 16.5 13.0 11.0 P1 dB Power Output @ 1 dB Gain Compression VDS = 4 V, IDS = 70 mA f = 4.0 GHz dBm 20.0 G1 dB 1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA f = 4.0 GHz dB 12.0 gm Transconductance: VDS = 2 V, VGS = 0 V IDSS Saturated Drain Current: VDS = 2 V, VGS = 0 V VP Pinchoff Voltage: VDS = 2 V, IDS = 1 mA mmho 70 140 mA 70 130 180 V -4.0 -1.3 -0.5 Note: 1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.” 5-23 5965-8701E ATF-10136 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature[4] Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25°C. 3. Derate at 2.9 mW/°C for TCASE > 25°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175°C. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See APPLICATIONS PRIMER IIIA for more information. Absolute Maximum[1] +5 -4 -7 IDSS 430 175 -65 to +175 Units V V V mA mW °C °C θjc = 350°C/W; TCH = 150°C 1 µm Spot Size[5] Thermal Resistance: Liquid Crystal Measurement: Part Number Ordering Information Part Number Devices Per Reel Reel Size ATF-10136-TR1 ATF-10136-STR 1000 10 7" STRIP For more information, see “Tape and Reel Packaging for Semiconductor Devices.” ATF-10136 Noise Parameters: VDS = 2 V, IDS = 25 mA Γopt Freq. GHz NFO dB Mag Ang 0.5 1.0 2.0 4.0 6.0 8.0 0.35 0.4 0.4 0.5 0.8 1.1 0.93 0.85 0.70 0.39 0.36 0.45 12 24 47 126 -170 -100 RN/50 0.80 0.70 0.46 0.36 0.12 0.38 ATF-10136 Typical Performance, T A = 25°C 12 GA 10 9 6 1.0 0.5 0 2.0 NFO NFO (dB) 1.5 6.0 8.0 10.0 12.0 FREQUENCY (GHz) Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 2V, IDS = 25 mA, TA = 25°C. 25 MSG 20 15 |S21|2 10 1.0 NFO 0 10 20 30 40 50 60 IDS (mA) Figure 2. Optimum Noise Figure and Associated Gain vs. IDS. VDS = 2V, f = 4.0 GHz. 5-24 MAG 5 0.5 0 4.0 GA (dB) 14 30 GAIN (dB) 15 12 1.5 NFO (dB) 16 GA (dB) GA 2.0 18 0 0.5 1.0 2.0 4.0 6.0 8.0 12.0 FREQUENCY (GHz) Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2 V, IDS = 25 mA. Typical Scattering Parameters, Common Source, ZO = 50 Ω, TA = 25°C, VDS = 2 V, IDS␣ =␣ 25 mA Freq. MHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 S11 Mag. .98 .93 .79 .64 .54 .47 .45 .50 .60 .68 .73 .77 .80 Ang. -18 -33 -66 -94 -120 -155 162 120 87 61 42 26 14 dB 14.5 14.3 13.3 12.2 11.1 10.1 9.2 8.0 6.4 4.9 3.6 2.0 1.0 S21 Mag. 5.32 5.19 4.64 4.07 3.60 3.20 2.88 2.51 2.09 1.75 1.52 1.26 1.12 Ang. 163 147 113 87 61 37 13 -10 -32 -51 -66 -82 -97 36 micro-X Package Dimensions 2.15 (0.085) SOURCE 2.11 (0.083) DIA. 4 101 DRAIN 3 GATE 1 SOURCE 1.45 ± 0.25 (0.057 ± 0.010) 0.56 (0.022) 2 2.54 (0.100) 0.508 (0.020) 0.15 ± 0.05 (0.006 ± 0.002) 4.57 ± 0.25 0.180 ± 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13 5-25 dB -34.0 -28.4 -22.6 -19.2 -17.3 -15.5 -14.3 -13.9 -13.6 -13.6 -13.7 -13.8 -14.0 S12 Mag. .020 .038 .074 .110 .137 .167 .193 .203 .210 .209 .207 .205 .200 S22 Ang. 78 67 59 44 31 13 -2 -19 -36 -46 -58 -73 -82 Mag. .35 .36 .30 .27 .22 .16 .08 .16 .32 .44 .51 .54 .54 Ang. -9 -19 -31 -42 -49 -54 -17 45 48 38 34 27 15