2–18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT Technology • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz • Low Parasitic Ceramic Microstrip Package • Tape-and-Reel Packing Option Available Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Additionally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performance to variations in input impedance match, making the design of broadband low noise amplifiers much easier. The premium sensitivity of the ATF-36077 makes this device the ideal choice for use in the first stage of extremely low noise cascades. 25 Note: 1. See Noise Parameter Table. 20 Ga NOISE FIGURE (dB) 1.2 15 0.8 10 NF[1] 0.4 0 0 4 8 12 16 20 FREQUENCY (GHz) Figure 1. ATF-36077 Optimum Noise Figure and Associated Gain vs. Frequency for VDS = 1.5 V, ID = 10 mA. 5-75 Pin Configuration 4 1 GATE 360 • 12 GHz DBS LNB (Low Noise Block) • 4 GHz TVRO LNB (Low Noise Block) • Ultra-Sensitive Low Noise Amplifiers ASSOCIATED GAIN (dB) Applications 77 Package 2 SOURCE 3 DRAIN SOURCE The repeatable performance and consistency make it appropriate for use in Ku-band Direct Broadcast Satellite (DBS) Television systems, C-band Television Receive Only (TVRO) LNAs, or other low noise amplifiers operating in the 2-18␣ GHz frequency range. This GaAs PHEMT device has a nominal 0.2 micron gate length with a total gate periphery (width) of 200 microns. Proven gold based metalization systems and nitride passivation assure rugged, reliable devices. 5965-8726E ATF-36077 Absolute Maximum Ratings Symbol Parameter Units Absolute Maximum[1] VDS Drain – Source Voltage V +3 VGS Gate – Source Voltage V -3 VGD Gate-Drain Voltage V -3.5 mA Idss mW 180 dBm +10 ID PT Pin max Drain Current Total Power Dissipation[3] RF Input Power Tch Channel Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance[2,3]: θch-c = 60°C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Measured at Pdiss = 15 mW and Tch = 100°C. 3. Derate at 16.7 mW/°C for TC > 139°C. ATF-36077 Electrical Specifications, TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted). Symbol Parameters and Test Conditions Units Min. Typ. Max. 0.5 0.6 NF Noise Figure[1] f = 12.0 GHz dB GA Gain at NF[1] f = 12.0 GHz dB 11.0 12.0 gm Transconductance VDS = 1.5 V, VGS = 0 V mS 50 55 Idss Saturated Drain Current VDS = 1.5 V, VGS = 0 V mA 15 25 45 V -1.0 -0.35 -0.15 Units Typ. Vp 10 % Pinch-off Voltage VDS = 1.5 V, IDS = 10% of Idss Note: 1. Measured in a fixed tuned environment with Γ source = 0.54 at 156°; Γ load = 0.48 at 167°. ATF-36077 Characterization Information, TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted). Symbol Parameters and Test Conditions NF Noise Figure (Tuned Circuit) f = 4 GHz f = 12 GHz dB dB 0.3[2] 0.5 GA Gain at Noise Figure (Tuned Circuit) f = 4 GHz f = 12 GHz dB dB 17 12 f = 12 GHz, VDS = 1.5 V, VGS = -2 V dB 14 S12 off Reverse Isolation P1dB Output Power at 1 dB Gain Compression f = 4 GHz f = 12 GHz dBm dBm 5 5 Gate to Source Voltage for IDS = 10 mA VDS = 1.5 V V -0.2 VGS 10 mA Note: 2. See noise parameter table. 5-76 ATF-36077 Typical Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.99 0.97 0.94 0.90 0.86 0.82 0.78 0.75 0.72 0.69 0.66 0.63 0.61 0.60 0.58 0.57 0.56 0.57 -17 -33 -49 -65 -79 -93 -107 -120 -133 -146 -159 -172 175 161 147 131 114 97 14.00 13.81 13.53 13.17 12.78 12.39 12.00 11.64 11.32 11.04 10.81 10.63 10.50 10.41 10.36 10.34 10.34 10.35 5.010 4.904 4.745 4.556 4.357 4.162 3.981 3.820 3.682 3.566 3.473 3.401 3.349 3.315 3.296 3.289 3.289 3.291 163 147 132 116 102 88 75 62 49 37 25 13 1 -12 -24 -37 -50 -64 -36.08 -30.33 -27.25 -25.32 -24.04 -23.17 -22.58 -22.17 -21.90 -21.71 -21.57 -21.44 -21.32 -21.19 -21.04 -20.87 -20.69 -20.53 0.016 0.030 0.043 0.054 0.063 0.069 0.074 0.078 0.080 0.082 0.083 0.085 0.086 0.087 0.089 0.091 0.092 0.094 78 66 54 43 33 24 16 8 1 -6 -13 -19 -25 -32 -39 -47 -55 -65 0.60 0.59 0.57 0.55 0.53 0.50 0.48 0.46 0.44 0.42 0.40 0.38 0.37 0.35 0.33 0.31 0.29 0.26 -14 -28 -41 -54 -66 -78 -89 -99 -109 -119 -129 -139 -149 -160 -171 177 164 148 ATF-36077 Typical “Off” Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 0 mA, VGS = -2 V Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S21 Mag. Ang. Mag. Ang. 11.0 12.0 13.0 0.96 0.95 0.94 -139 -152 -166 -14.2 -14.0 -13.8 0.19 0.20 0.20 -43 -56 -69 -14.2 -14.0 -13.8 0.19 0.20 0.20 -43 -56 -68 0.97 0.97 0.96 -125 -137 -149 5-77 S22 ATF-36077 Typical Noise Parameters, Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA 25 Fmin[1] dB Mag. Ang. Rn /Zo - 1 0.30 0.95 12 0.40 2 0.30 0.90 25 0.20 4 0.30 0.81 51 0.17 6 0.30 0.73 76 0.13 8 0.37 0.66 102 0.09 10 0.44 0.60 129 0.05 12 0.50 0.54 156 0.03 14 0.56 0.48 -174 0.02 16 0.61 0.43 -139 0.05 18 0.65 0.39 -100 0.09 20 MSG MAG GAIN (dB) Γopt Freq. GHz 15 S21 10 5 0 0 4 8 12 16 FREQUENCY (GHz) Figure 2. Maximum Available Gain, Maximum Stable Gain and Insertion Power Gain vs. Frequency. VDS = 1.5 V, ID = 10 mA. Note: 1. The Fmin values at 2,4, and 6 GHz have been adjusted to reflect expected circuit losses that will be encountered when matching to the optimum reflection coefficient (Γopt) at these frequencies. The theoretical Fmin values for these frequencies are: 0.10 dB at 2␣ GHz, 0.20 dB at 4 GHz, and 0.29 dB at 6 GHz. Noise parameters are derived from associated s parameters, packaged device measurements at 12 GHz, and die level measurements from 6 to 18 GHz. 77 Package Dimensions Part Number Ordering Information 1.02 (0.040) SOURCE 4 1 GATE SOURCE 360 .51 (0.020) Part Number No. of Devices Container ATF-36077-TRl[2] 1000 7" Reel ATF-36077-STR 10 strip Note: 2. For more information, see “Tape and Reel Packaging for Semiconductor Devices,” in “Communications Components” Designer‘s Catalog. 3 DRAIN 2 1.78 (0.070) 1.75 (0.069) 1.22 (0.048) .53 (0.021) 5.28 (0.208) .10 (0.004) TYPICAL DIMENSIONS ARE IN MILLIMETERS (INCHES). 5-78 20