0.5–10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High Output Power: 19.0␣ Bm Typical P 1 dB at 4␣ GHz • High Gain: 12.5␣ dB Typical G 1 dB at 4 GHz • Low Noise Figure: 1.2 dB Typical at 4 GHz • Cost Effective Ceramic Microstrip Package Description The ATF-25735 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range. 35 micro-X Package This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. Electrical Specifications, TA = 25°C Symbol NFO GA P1 dB Parameters and Test Conditions Optimum Noise Figure: VDS = 3 V, IDS = 20 mA Gain @ NFO: VDS = 3 V, IDS = 20 mA G1 dB Power Output @ 1 dB Gain Compression: VDS =5 V, IDS = 50 mA 1 dB Compressed Gain: VDS = 5 V, IDS =50 mA gm Transconductance: VDS =3 V, VGS = 0 V IDSS Saturated Drain Current: VDS =3 V, VGS = 0 V VP Pinch-off Voltage: VDS = 3 V, IDS = 1 mA 5-63 Units f = 2. 0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f =.6.0 GHz Min. dB dB 11.5 Typ. Max. 1.0 1.2 1.4 15.0 13.0 10.5 f = 4.0 GHz dBm 19.0 f = 4.0 GHz dB 12.5 1.5 mmho 50 80 mA 50 100 150 V -3.0 -2.0 -0.8 5965-8710E ATF-25735 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature[4] Units V V V mA mW °C °C Absolute Maximum[1] +7 -4 -8 IDSS 450 175 -65 to +175 θjc = 325°C/W; TCH = 150°C 1␣ µm Spot Size[5[ Thermal Resistance: Liquid Crystal Measurement: ATF-25735 Typical Performance, TA = 25°C 25 25 MSG 20 20 MSG MAG |S21|2 10 5 0 0.5 GAIN (dB) GAIN (dB) MAG 15 15 MSG |S21|2 10 5 1.0 2.0 4.0 6.0 8.0 12.0 FREQUENCY (GHz) Figure 1. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 20 mA. 0 0.5 1.0 2.0 4.0 6.0 8.0 12.0 FREQUENCY (GHz) Figure 2. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 5 V, IDS = 50 mA. 5-64 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25°C. 3. Derate at 3 mW/°C for TCASE > 29°C. 4. Storage above +150°C may tarnish the leads of this package difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175°C. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information. Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 3 V, IDS␣ =␣ 20 mA Freq. GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 S11 Mag. .98 .94 .85 .70 .58 .50 .52 .59 .65 .69 .73 .79 .84 Ang. -22 -45 -82 -116 -152 165 122 90 66 44 32 20 7 dB 13.9 13.3 12.2 11.0 10.0 8.9 7.7 6.3 5.1 3.8 2.7 1.1 -0.2 S21 Mag. 4.95 4.61 4.06 3.54 3.17 2.78 2.43 2.06 1.79 1.55 1.36 1.14 .98 Ang. 159 142 110 81 54 27 1 -23 -43 -63 -82 -100 -119 dB -32.0 -27.1 -21.6 -19.3 -17.7 -16.7 -16.1 -15.8 -15.5 -15.3 -15.4 -15.5 -15.7 S12 Mag. .025 .044 .083 .109 .131 .146 .156 .162 .167 .172 .170 .168 .161 S22 Ang. 77 64 45 24 12 -7 -20 -34 -46 -53 -65 -78 -93 Mag. .52 .52 .46 .38 .35 .29 .18 .07 .09 .15 .18 .21 .26 Ang. -12 -20 -41 -61 -81 -97 -112 -161 107 76 53 24 -5 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 5 V, IDS␣ =␣ 50 mA Freq. GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 S11 Mag. .93 .88 .78 .65 .55 .48 .47 .56 .65 .73 .78 .80 .85 Ang. -21 -42 -81 -112 -142 -176 142 104 80 61 47 34 18 dB 16.0 15.4 14.1 12.6 11.4 10.6 9.7 8.4 7.0 5.8 4.7 3.6 2.7 S21 Mag. 6.29 5.89 5.08 4.27 3.73 3.37 3.04 2.64 2.25 1.94 1.71 1.51 1.36 Ang. 156 140 108 83 58 36 10 -14 -35 -53 -72 -90 -109 A model for this device is available in the DEVICE MODELS section. 5-65 dB -34.0 -29.6 -24.4 -22.6 -21.0 -19.7 -18.3 -17.5 -16.7 -16.1 -15.4 -15.1 -14.8 S12 Mag. .020 .033 .060 .074 .089 .104 .122 .134 .146 .157 .169 .176 .181 S22 Ang. 69 62 49 39 28 20 6 -6 -17 -26 -40 -53 -64 Mag. .56 .53 .47 .44 .41 .37 .28 .14 .07 .14 .20 .27 .36 Ang. -10 -21 -43 -55 -64 -69 -83 -105 172 113 94 68 45 35 micro-X Package Dimensions .085 2.15 4 SOURCE .083 DIA. 2.11 DRAIN 257 GATE 1 3 .020 .508 2 .057 ± .010 1.45 ± .25 .022 .56 SOURCE .100 2.54 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .455 ± .030 11.54 ± .76 .006 ± .002 .15 ± .05 5-66