AGILENT ATF

0.5 – 10 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-25570
Features
• High Output Power:
20.5 dBm Typical P1 dB at 4␣ GHz
• Low Noise Figure:
1.0 dB Typical at 4 GHz
• High Associated Gain:
14.0␣ dB Typical at 4␣ GHz
• Hermetic Gold-Ceramic
Microstrip Package
Description
The ATF-25570 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a hermetic, high reliabil-
ity package. This device is
designed for use in general
purpose amplifier and oscillator
applications in the 0.5-10 GHz
frequency range.
70 mil Package
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
NFO
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA
GA
Gain @ NFO: VDS = 3 V, IDS = 20 mA
P1 dB
G1 dB
Power Output @ 1 dB Gain Compression:
VDS =5 V, IDS = 50 mA
1 dB Compressed Gain: VDS =5 V, IDS =50 mA
gm
Transconductance: VDS =3 V, VGS = 0 V
IDSS
Saturated Drain Current: VDS = 3 V, VGS = 0 V
VP
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
5965-8711E
5-60
Units
Min.
Typ. Max.
f = 4.0 GHz
f = 6.0 GHz
f = 8.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 8.0 GHz
dB
f = 4.0 GHz
dBm
20.5
f = 4.0 GHz
dB
13.0
dB
13.0
1.0
1.2
1.4
14.0
11.0
8.5
1.3
mmho
50
80
mA
50
100
150
V
-3.0
-2.0
-0.8
ATF-25570 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
+7
-4
-8
IDSS
450
175
-65 to +175
θjc = 300°C/W; TCH = 150°C
1␣ µm Spot Size[4]
Thermal Resistance:
Liquid Crystal Measurement:
ATF-25570 Typical Performance, TA = 25°C
25
25
MSG
20
MSG
15
MAG
10
|S21|2
5
0
0.5
GAIN (dB)
GAIN (dB)
20
15
MAG
|S21|2
10
5
1.0
2.0
4.0
6.0 8.0
12.0
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
0
0.5
1.0
2.0
4.0 6.0 8.0 12.0
FREQUENCY (GHz)
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 50 mA.
5-61
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 3.3 mW/°C for
TCASE > 40°C.
4. The small spot size of this technique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 3 V, IDS␣ =␣ 20 mA
Freq.
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
Mag.
.98
.96
.84
.78
.72
.68
.63
.60
.58
.59
.60
.60
.59
S11
Ang.
-24
-41
-76
-100
-123
-142
-162
175
150
128
113
104
91
S21
Mag.
5.02
4.70
4.14
3.48
3.01
2.67
2.45
2.30
2.06
1.90
1.72
1.61
1.56
dB
14.0
13.4
12.3
10.8
9.6
8.5
7.8
7.2
6.3
5.6
4.7
4.1
3.9
Ang.
160
145
115
94
73
54
36
18
-1
-19
-36
-48
-68
dB
-28.9
-26.2
-22.5
-20.9
-19.8
-18.8
-18.3
-17.5
-17.0
-16.7
-16.4
-16.1
-15.9
S12
Mag.
.036
.049
.075
.090
.102
.114
.121
.133
.141
.146
.151
.157
.160
S22
Ang.
71
62
44
33
20
9
0
-7
-16
-28
-35
-40
-44
Mag.
.56
.55
.49
.46
.42
.38
.35
.30
.26
.25
.26
.28
.30
Ang.
-24
-33
-51
-60
-76
-88
-101
-118
-138
-167
172
155
146
Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 5 V, IDS␣ =␣ 50 mA
Freq.
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
Mag.
.97
.94
.81
.73
.66
.61
.57
.56
.57
.59
.60
.60
.57
S11
Ang.
-27
-45
-82
-105
-128
-148
-170
167
145
127
115
108
93
S21
Mag.
6.49
5.95
4.72
3.86
3.29
2.88
2.65
2.41
2.19
2.00
1.82
1.72
1.67
dB
16.2
15.5
13.5
11.7
10.3
9.2
8.5
7.6
6.8
6.0
5.2
4.7
4.5
Ang.
156
141
111
91
70
52
34
16
-1
-18
-35
-47
-64
A model for this device is available in the DEVICE MODELS section.
70 mil Package Dimensions
.040
1.02
SOURCE
4
.020
.508
GATE
DRAIN
3
1
2
SOURCE
.004 ± .002
.10 ± .05
.070
1.70
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
5-62
dB
-32.0
-29.9
-26.2
-24.9
-23.4
-22.5
-21.6
-20.2
-19.2
-18.5
-17.8
-17.5
-16.9
S12
Mag.
.025
.032
.049
.057
.068
.075
.083
.097
.110
.119
.129
.134
.143
S22
Ang.
63
57
45
41
37
32
30
28
18
12
4
1
-10
Mag.
.59
.60
.58
.55
.52
.49
.48
.45
.42
.40
.40
.42
.44
Ang.
-21
-28
-39
-50
-62
-72
-84
-98
-115
-136
-159
-176
173