ATF-36077 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Data Sheet Description Features AvagoTechnologies' ATF-36077 is an ultra-low-noise Pseudo morphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Additionally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performance to variations in input impedance match, making the design of broadband low noise amplifiers much easier. The premium sensitivity of the ATF-36077 makes this device the ideal choice for use in the first stage of extremely low noise cascades. The repeatable performance and consistency make it appropriate for use in Ku-band Direct Broad-cast Satellite (DBS) Television systems, C-band Television Receive Only (TVRO) LNAs, or other low noise amplifiers operating in the 2‑18 GHz frequency range. • PHEMT Technology • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz • Low Parasitic Ceramic Microstrip Package • Tape-and-Reel Packing Option Available Applications 25 77 Package 20 Ga NOISE FIGURE (dB) 1.2 Pin Configuration 4 15 0.8 10 NF 0.4 0 0 4 8 ASSOCIATED GAIN (dB) • 12 GHz DBS LNB (Low Noise Block) • 4 GHz TVRO LNB (Low Noise Block) • Ultra-Sensitive Low Noise Amplifiers [1] 12 16 20 FREQUENCY (GHz) SOURCE Figure 1. ATF-36077 Optimum Noise Figure and Associated Gain vs. Frequency for VDS = 1.5 V, ID = 10 mA. 1 GATE 360 ATF-36077 fig 1 2 3 DRAIN SOURCE This GaAs PHEMT device has a nominal 0.2 micron gate length with a total gate periphery (width) of 200 microns. Proven gold based metalization systems and nitride passivation assure rugged, reliable devices. Note: 1. See Noise Parameter Table. ATF-36077 Absolute Maximum Ratings Symbol Parameter Units Absolute Maximum[1] VDS Drain – Source Voltage V +3 VGS Gate – Source Voltage V -3 VGD Gate-Drain Voltage V -3.5 ID Drain Current mA Idss PT Total Power Dissipation[3] mW 180 Pin max RF Input Power dBm +10 Tch Channel Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance[2,3]: θch-c = 60°C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Measured at Pdiss = 15 mW and Tch = 100°C. 3. Derate at 16.7 mW/°C for TC > 139°C. ATF-36077 Electrical Specifications, TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted). Symbol Parameters and Test Conditions NF Noise GA Gain at NF[1] Figure[1] Units Min. Typ. Max. 0.6 f = 12.0 GHz dB 0.5 f = 12.0 GHz dB 11.0 12.0 gm Transconductance VDS = 1.5 V, VGS = 0 V mS 50 55 Idss Saturated Drain Current VDS = 1.5 V, VGS = 0 V mA 15 25 45 Vp 10 % V -1.0 -0.35 -0.15 Symbol Parameters and Test Conditions Units Typ. Pinch-off Voltage VDS = 1.5 V, IDS = 10% of Idss Note: 1. Measured in a fixed tuned environment with Γ source = 0.54 at 156°; Γ load = 0.48 at 167°. ATF-36077 Characterization Information, TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted). NF Noise Figure (Tuned Circuit) f = 4 GHz f = 12 GHz dB dB 0.3[2] 0.5 GA Gain at Noise Figure (Tuned Circuit) f = 4 GHz f = 12 GHz dB dB 17 12 dB 14 P1dB Output Power at 1 dB Gain Compression S12 off f = 4 GHz f = 12 GHz dBm dBm 5 5 VDS = 1.5 V V -0.2 VGS 10 mA Reverse Isolation Gate to Source Voltage for IDS = 10 mA Note: 2. See noise parameter table. f = 12 GHz, VDS = 1.5 V, VGS = -2 V ATF-36077 Typical Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. dB S12 S22 Mag. Ang. Mag. Ang. 1.0 0.99 -17 14.00 5.010 163 -36.08 0.016 78 0.60 -14 2.0 0.97 -33 13.81 4.904 147 -30.33 0.030 66 0.59 -28 3.0 0.94 -49 13.53 4.745 132 -27.25 0.043 54 0.57 -41 4.0 0.90 -65 13.17 4.556 116 -25.32 0.054 43 0.55 -54 5.0 0.86 -79 12.78 4.357 102 -24.04 0.063 33 0.53 -66 6.0 0.82 -93 12.39 4.162 88 -23.17 0.069 24 0.50 -78 7.0 0.78 -107 12.00 3.981 75 -22.58 0.074 16 0.48 -89 8.0 0.75 -120 11.64 3.820 62 -22.17 0.078 8 0.46 -99 9.0 0.72 -133 11.32 3.682 49 -21.90 0.080 1 0.44 -109 10.0 0.69 -146 11.04 3.566 37 -21.71 0.082 -6 0.42 -119 11.0 0.66 -159 10.81 3.473 25 -21.57 0.083 -13 0.40 -129 12.0 0.63 -172 10.63 3.401 13 -21.44 0.085 -19 0.38 -139 13.0 0.61 175 10.50 3.349 1 -21.32 0.086 -25 0.37 -149 14.0 0.60 161 10.41 3.315 -12 -21.19 0.087 -32 0.35 -160 15.0 0.58 147 10.36 3.296 -24 -21.04 0.089 -39 0.33 -171 16.0 0.57 131 10.34 3.289 -37 -20.87 0.091 -47 0.31 177 17.0 0.56 114 10.34 3.289 -50 -20.69 0.092 -55 0.29 164 18.0 0.57 97 10.35 3.291 -64 -20.53 0.094 -65 0.26 148 ATF-36077 Typical “Off ” Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 0 mA, VGS = -2 V Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. dB S21 S22 Mag. Ang. Mag. Ang. 11.0 0.96 -139 -14.2 0.19 -43 -14.2 0.19 -43 0.97 -125 12.0 0.95 -152 -14.0 0.20 -56 -14.0 0.20 -56 0.97 -137 13.0 0.94 -166 -13.8 0.20 -69 -13.8 0.20 -68 0.96 -149 ATF-36077 Typical Noise Parameters, Rn /Zo - 1 0.30 0.95 12 0.40 2 0.30 0.90 25 0.20 4 0.30 0.81 51 0.17 6 0.30 0.73 76 0.13 8 0.37 0.66 102 0.09 10 0.44 0.60 129 0.05 12 0.50 0.54 156 0.03 14 0.56 0.48 -174 0.02 16 0.61 0.43 -139 0.05 18 0.65 0.39 -100 0.09 25 20 GAIN (dB) Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA Freq. Fmin[1] Γopt GHz dB Mag. Ang. MSG MAG 15 S21 10 5 0 0 8 4 4 SOURCE 360 .51 (0.020) 1 GATE Figure 2. Maximum Available Gain, Maximum Stable Gain and Insertion Power Gain vs. Frequency. VDS = 1.5 V, ID = 10 mA. ATF-36077 fig 2 Part Number No. of Devices Container ATF-36077-TRl[2] 1000 100 7" Reel strip ATF-36077-STR Note: 2. For more information, see “Tape and Reel Packaging for Semiconductor Devices,” in “Communications Components” Designer‘s Catalog. 3 DRAIN 2 1.78 (0.070) 1.75 (0.069) 1.22 (0.048) .53 (0.021) 20 Part Number Ordering Information 1.02 (0.040) SOURCE 16 FREQUENCY (GHz) Note: 1. The Fmin values at 2,4, and 6 GHz have been adjusted to reflect expected circuit losses that will be encountered when matching to the optimum reflection coefficient (Γopt) at these frequencies. The theoretical Fmin values for these frequencies are: 0.10 dB at 2 GHz, 0.20 dB at 4 GHz, and 0.29 dB at 6 GHz. Noise parameters are derived from associated s parameters, packaged device measurements at 12 GHz, and die level measurements from 6 to 18 GHz. 77 Package Dimensions 12 5.28 (0.208) .10 (0.004) TYPICAL DIMENSIONS ARE IN MILLIMETERS (INCHES). For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes 5965-8726E AV02-1222EN - April 29, 2008