LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE243 PACKAGE DIMENSIONS 0.060 (1.50) 0.174 (4.44) R 0.030 (0.76) ;@À;@À 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN SCHEMATIC Collector EMITTER 0.060 (1.52) Emitter 0.020 (0.51) SQ. (2X) 0.100 (2.54) NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. DESCRIPTION The QSE243 is a silicon phototransistor with low light level rejection, encapsulated in a medium angle, thin clear plastic sidelooker package. FEATURES • NPN Silicon Phototransistor with internal base-emitter resistance • Package Type: Sidelooker • Medium Reception Angle, 50° • Clear Plastic Package • Matching Emitter: QEE213 2001 Fairchild Semiconductor Corporation DS300288 9/20/01 1 OF 3 www.fairchildsemi.com LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE243 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Operating Temperature TOPR -40 to + 100 °C Storage Temperature TSTG -40 to + 100 °C (Iron)(2,3,4) Soldering Temperature TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C Collector-Emitter Voltage VCE 30 V Emitter-Collector Voltage VEC 5 V Power Dissipation(1) PD 100 mW ELECTRICAL / OPTICAL CHARACTERISTICS Parameter (TA =25°C) Symbol Min Typ Max Units Peak Sensitivity DPS — 880 — nm Reception Angle 0 — ±25 — Deg. VCE = 15 V, Ee = 0 ID — — 100 nA IC = 100 µA BVCEO 30 — — V VCE (sat) — — 0.4 V tr — 15 — µs tf — 15 — µs ILS 1.0 Collector Emitter Dark Current Collector Emitter Breakdown Saturation Voltage Test Conditions Ee = 1 mW/cm2 IC = 0.1 mA(5) Rise Time VCC = 5 V, RL = 1000 V Fall Time IC = 1 mA (5) Light Current Slope(6) Knee Point(5,7) VCE = 5 V, Ee1 = 1 mW/cm2 Ee2 = 0.5 mW/cm2(5) VCE = 5 V Eek mA/mW/cm2 0.125 mW/cm2 NOTES 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16” (1.6 mm) minimum from housing. 5. D = 950 nm, GaAs source 6. The slope is defined by (IC1-IC2) / (EC1-EC2) where IC1 is the collector current at Ee1 and IC2 the collector current at Ee2. 7. Knee point is defined as being required to increase IC to 50 µA. www.fairchildsemi.com 2 OF 3 9/20/01 DS300288 LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE243 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. DS300288 9/20/01 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 3 OF 3 www.fairchildsemi.com