2N3903 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 23. See 2N3904 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 40 VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units 2N3903 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N3903 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, I E = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, IC = 0 6.0 Collector Cutoff Current VCE = 30 V, VOB = 3.0 V 50 nA Base Cutoff Current VCE = 30 V, VOB = 3.0 V 50 nA z ICEX IBL V ON CHARACTERISTICS* hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage VCE = 1.0 V, IC = 0.1 mA VCE = 1.0 V, IC = 1.0 mA VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 50 mA VCE = 1.0 V, IC = 100 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 20 35 50 30 15 0.65 150 0.2 0.3 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 5.0 V, f = 100 kHz 4.0 pF Cib Input Capacitance VEB = 0.5 V, f = 100 kHz 8.0 pF hfe Small-Signal Current Gain 2.5 hfe Small-Signal Current Gain IC = 10 mA, VCE = 20 V, f = 100 MHz VCE = 10 V, IC = 1.0 mA 50 200 hie Input Impedance f = 1.0 kHz 1.0 8.0 kΩ hre Voltage Feedback Ratio 0.1 5.0 hoe NF Output Admittance Noise Figure -4 40 x 10 µmhos VCE = 5.0 V, IC = 100 µA, RS = 1.0 kΩ, BW = 10 Hz to 15.7 kHz 6.0 dB ns 1.0 SWITCHING CHARACTERISTICS td Delay Time VCC = 3.0 V, IC = 10 mA, 35 tr Rise Time ns Storage Time I B1 = 1.0 mA , Vob ( off ) = 0.5 V VCC = 3.0 V, IC = 10 mA 35 ts 175 ns tf Fall Time I B1 = IB2 = 1.0 mA 50 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 2N3903 NPN General Purpose Amplifier