2N4124 MMBT4124 C E C TO-92 BE SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 25 VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units 2N4124 625 5.0 83.3 *MMBT4124 350 2.8 200 357 mW mW/°C °C/W °C/W 2N4124 / MMBT4124 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage I C = 1.0 mA, IB = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, IE = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage I C = 10 µA, IC = 0 5.0 ICBO Collector Cutoff Current VCB = 20 V, IE = 0 50 nA IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage I C = 2.0 mA, VCE = 1.0 V I C = 50 mA, VCE = 1.0 V I C = 50 mA, IB = 5.0 mA VBE( sat) Base-Emitter Saturation Voltage I C = 50 mA, IB = 5.0 mA 120 60 360 0.3 V 0.95 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance Ccb Collector-Base Capcitance hfe Small-Signal Current Gain NF Noise Figure *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% I C = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 100 kHz VBE = 0.5 V, IC = 0, f = 1.0 kHz VCB = 5.0 V, IE = 0, f = 100 kHz VCE = 10 V, IC = 2.0 mA, f = 1.0 kHz I C = 100 µA, VCE = 5.0 V, RS =1.0kΩ, f=10 Hz to 15.7 kHz 300 120 MHz 4.0 pF 8.0 pF 4.0 pF 480 5.0 dB 2N4124 / MMBT4124 NPN General Purpose Amplifier