MPSW06 C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. See MPSA06 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 80 V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max Units MPSW06 1.0 8.0 125 W mW/°C °C/W 50 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2 . 1997 Fairchild Semiconductor Corporation MPSW06 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Sustaining Voltage* I C = 1.0 mA, IB = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 100 µA, IC = 0 4.0 ICEO Collector-Cutoff Current VCE = 60 V, IB = 0 0.1 µA ICBO Collector-Cutoff Current VCB = 80 V, IE = 0 0.1 µA V ON CHARACTERISTICS hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage I C = 10 mA, VCE = 1.0 V I C = 100 mA, VCE = 1.0 V I C = 100 mA, IB = 10 mA VBE( on) Base-Emitter On Voltage I C = 100 mA, VCE = 1.0 V 100 100 0.25 V 1.2 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product I C = 10 mA, VCE = 2.0 V, f = 100 MHz 100 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0 Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5 Vtf=4 Xtf=6 Rb=10) MPSW06 NPN General Purpose Amplifier