March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 20 A, 30 V. RDS(ON) = 0.035 Ω @ VGS=10 V RDS(ON) = 0.055 Ω @ VGS=4.5V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating. _______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted Parameter FDP4030L FDB4030L Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current 20 A - Continuous - Pulsed PD (Note 1) (Note 1) Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 60 37.5 W 0.25 W/°C -65 to 175 °C 275 °C 4 °C/W 62.5 °C/W THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient © 1998 Fairchild Semiconductor Corporation FDP4030L Rev.B1 Electrical Characteristics (T Symbol C = 25°C unless otherwise noted) Parameter Conditions DRAIN-SOURCE AVALANCHE RATINGS Min Typ Max Unit 50 mJ 7 A (Note 1) OFF CHARACTERISTICS WDSS Single Pulse Drain-Source Avalanche Energy IAR Maximum Drain-Source Avalanche Current BVDSS Drain-Source Breakdown Voltage VDD = 15 V, ID = 7 A VGS = 0 V, ID = 250 µA 30 ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25oC IDSS VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current V mV/oC 33 TJ = 125°C 10 µA 1 mA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA 2 V ON CHARACTERISTICS VGS(th) (Note 1) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 10 A o 1.6 mV/oC -4.1 TJ = 125°C VGS = 10 V, ID = 4.5 A 0.025 0.035 0.048 0.06 0.046 0.055 30 Ω ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 10 V, ID = 10 A 11 A S VDS = 15 V, VGS = 0 V, f = 1.0 MHz 365 pF 210 pF 70 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 1) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) VDD = 15 V, ID = 10 A, VGS = 10 V, RGEN = 10 Ω 8 15 nS 8 15 nS Turn - Off Delay Time 20 40 nS tf Turn - Off Fall Time 10 20 nS Qg Total Gate Charge 13 18 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 24 V ID = 10 A, VGS= 10 V 2 nC 4 nC DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuos Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10 A (Note 1) TJ = 125°C 20 A 60 A 1.12 1.3 V 1.08 1.2 Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. FDP4030L Rev.B1 Typical Electrical Characteristics 2.5 VGS = 10V 6.0V 30 R DS(ON) , NORMALIZED 5.0V 4.5V 20 4.0V 10 3.5V DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 40 2 VGS =4.5V 5.0V 5.5V 1.5 7.0V 8.0V 10V 1 0.5 0 0 1 2 3 4 0 5 10 40 0.16 1.8 1.6 R DS(ON) , ON-RESISTANCE (OHM) I D = 10A V GS = 10V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 ID = 10A 0.12 0.08 TA = 125° C 0.04 TA = 25° C 0 175 2 4 TJ , JUNCTION TEMPERATURE (°C) 6 8 10 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 15 15 TJ = -55°C VDS = 10V IS , REVERSE DRAIN CURRENT (A) R DS(ON) , NORMALIZED 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. DRAIN-SOURCE ON-RESISTANCE 20 I D , DRAIN CURRENT (A) VDS , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A) 6.0V 25°C 125°C 12 9 6 3 VGS =0V TJ = 125°C 1 25°C -55°C 0.1 0.01 0.001 0.0001 0 1 1.5 2 2.5 3 3.5 4 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4.5 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6 . Body Diode Forward Voltage Variation with Source Current and Temperature. FDP4030L Rev.B1 Typical Electrical Characteristics (continued) 1000 VDS = 6V ID = 10A 12V 24V 12 CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 15 9 6 Ciss 400 Coss 200 100 Crss f = 1 MHz VGS = 0V 3 40 0.1 0 0 4 8 12 16 20 0.3 1 4 10 30 VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) EFFECTIVE 1000 100 10 10 µs 0µ s it R 20 D S(O N) Lim 1m s 10 ms 10 0m DC s 10 5 VGS = 10V SINGLE PULSE RθJC = 4 o C/W TC = 25 °C 2 1 SINGLE PULSE R θJC = 4°C/W TC = 25°C 800 POWER (W) I D , DRAIN CURRENT (A) 50 0.5 0.5 NORMALIZED Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 600 400 200 0 0.0001 1 3 5 10 20 30 0.001 50 0.01 0.1 1 10 SINGLE PULSE TIME (SEC) V DS , DRAIN-SOURCE VOLTAGE (V)) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 R θJC (t) = r(t) * RθJC R θJC = 4.0 °C/W 0.2 0.2 0.1 P(pk) 0.05 t1 Single Pulse 0.1 0.05 0.0001 t2 TJ - TC = P * RθJC (t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 1 10 t 1 ,TIME (sec) Figure 11. Transient Thermal Response Curve. FDP4030L Rev.B1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4