BD159G Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment • Thermopadt Construction Provides High Power Dissipation Rating • for High Reliability These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 350 Vdc Collector−Base Voltage VCB 375 Vdc Emitter−Base Voltage VEB 5.0 Vdc IC 0.5 Adc Collector Current − Continuous Collector Current − Peak ICM 1.0 Adc Base Current IB 0.25 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 20 0.16 W mW/_C –65 to +150 _C Operating and Storage Junction Temperature Range TJ, Tstg 0.5 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS, 20 WATTS COLLECTOR 2 3 BASE 1 EMITTER TO−225 CASE 77 STYLE 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 2 3 THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 6.25 _C/W MARKING DIAGRAM YWW BD159G Y WW BD159 G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 October, 2013 − Rev. 6 1 BD159G Package Shipping TO−225 (Pb−Free) 500 Units/Box Publication Order Number: BD159/D BD159G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit BVCEO 350 − Vdc Collector Cutoff Current (at rated voltage) ICBO − 100 mAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO − 100 mAdc hFE 30 240 − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) 1.0 20 V, VOLTAGE (VOLTS) PD, POWER DISSIPATION (WATTS) 25 15 0.8 VBE @ IC/IB = 10 0.6 VBE @ VCE = 10 V 0.4 VCE(sat) @ IC/IB = 10 10 TJ = + 25°C 0.2 IC/IB = 5.0 5.0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 0 160 10 20 IC, COLLECTOR CURRENT (AMPS) Figure 1. Power−Temperature Derating Curve 1.0 0.7 0.5 500 ms The Safe Operating Area Curves indicate IC − VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below, the maximum TJ, power−temperature derating must be observed for both steady state and pulse power conditions. 10 ms dc 0.2 0.1 0.07 0.05 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.03 0.02 0.01 500 Figure 2. “On” Voltages 1.0 ms TJ = 150°C 0.3 30 50 100 200 300 IC, COLLECTOR CURRENT (mA) 10 200 20 30 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 Figure 3. DC Safe Operating Area 300 VCE = 10 V VCE = 2.0 V hFE, DC CURRENT GAIN 200 TJ = 150°C 100 + 100°C 70 50 + 25°C 30 - 55°C 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (mAdc) Figure 4. Current Gain http://onsemi.com 2 70 100 200 300 500 BD159G PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AB E A1 Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. A DIM A A1 b b2 c D E e L L1 P Q D P 1 2 3 L1 MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 L STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE 2X b2 2X e b c Thermopad is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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