NSR0340V2T1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0340V2 in a SOD−523 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features • • • • • • • http://onsemi.com 40 VOLT SCHOTTKY BARRIER DIODE Very Low Forward Voltage Drop − 410 mV @ 100 mA Low Reverse Current − 0.5 mA @ 25 V VR 250 mA of Continuous Forward Current Power Dissipation of 200 mW with Minimum Trace Very High Switching Speed Low Capacitance − CT = 6 pF This is a Pb−Free Device 1 CATHODE 2 Typical Applications • • • • • LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection 1 SOD−523 CASE 502 PLASTIC MARKING DIAGRAM Markets • • • • • 2 ANODE Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs and PDAs GPS 1 Symbol Value Unit Reverse Voltage VR 40 Vdc Forward Continuous Current (DC) IF 250 mA IFSM 1.0 A Non−Repetitive Peak Forward Surge Current ESD Rating: Human Body Model Machine Model ESD Class 2 Class A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2008 October, 2008 − Rev. 0 2 AD = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS Rating AD M G G 1 *Date Code orientation position may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSR0340V2T1G SOD−523* (Pb−Free) 3000/Tape & Reel *This package is inherently Pb−Free. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSR0340V2T1/D NSR0340V2T1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C RqJA PD 600 200 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 300 400 °C/W mW TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Reverse Leakage (VR = 10 V) (VR = 25 V) (VR = 40 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) VF Total Capacitance (VR = 10 V, f = 1 MHz) CT Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA) trr DC Current Source + − 750 mH 50 W Output Pulse Generator 0.1 mF Min Max 0.2 0.5 1.5 1.0 3.0 6.0 310 410 470 350 450 510 6.0 5.0 0V IF Typ tr 10% 90% VR 0.1 mF tp Pulse Generator Output IF DUT Adjust for IRM trr RL = 50 W IRM Current Transformer 50 W Input Oscilloscope 1. 2. 3. 4. 5. iR(REC) = 1 mA Output Pulse (IF = IRM = 10 mA; measured at iR(REC) = 1 mA) DC Current Source is adjusted for a Forward Current (IF) of 10 mA. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. Pulse Generator transition time << trr. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 Unit mA mV pF ns NSR0340V2T1G 100 IR, REVERSE CURRENT (mA) 10000 125°C 10 150°C 1 85°C 0.1 0.01 0 0.1 25°C 0.2 −40°C 0.3 0.4 0.5 0.6 150°C 1000 100 125°C 10 85°C 1 0.1 25°C 0.01 0.001 −40°C 0.0001 0.00001 0 5 10 15 20 25 30 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Leakage Current 30 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 TA = 25°C 25 20 15 10 5 0 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Figure 4. Total Capacitance http://onsemi.com 3 35 40 35 40 NSR0340V2T1G PACKAGE DIMENSIONS SOD−523 CASE 502−01 ISSUE C −X− A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− B 1 2 D 2 PL 0.08 (0.003) M DIM A B C D J K S T X Y C J MILLIMETERS MIN NOM MAX 1.10 1.20 1.30 0.70 0.80 0.90 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 0.15 0.20 0.25 1.50 1.60 1.70 MIN 0.043 0.028 0.020 0.010 0.0028 0.006 0.059 INCHES NOM MAX 0.047 0.051 0.032 0.035 0.024 0.028 0.012 0.014 0.0055 0.0079 0.008 0.010 0.063 0.067 −T− K SEATING PLANE S SOLDERING FOOTPRINT* 1.40 0.0547 0.40 0.0157 0.40 0.0157 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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